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Stefan Muff

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

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preprint2020arXiv

Single spin-polarised Fermi surface in SrTiO$_3$ thin films

The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growing thin SrTiO$_3$ films on Nb doped SrTiO$_3$(001) substrates. This results in a single spin-polarised 2D Fermi surface, which bears potential as platform for Majorana physics. Based on our results it can furthermore be concluded that the 2DEG does not extend more than 2 unit cells into the film and that its properties depend on the amount of SrO$_x$ at the surface and possibly the dielectric response of the system.

preprint2015arXiv

Response of the topological surface state to surface disorder in TlBiSe$_2$

Through a combination of experimental techniques we show that the topmost layer of the topo- logical insulator TlBiSe$_2$ as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands can not be re- garded as a clear surface termination. The topological surface state is, however, clearly resolved in photoemission experiments. This is interpreted as a direct evidence of its topological self-protection and shows the robust nature of the Dirac cone like surface state. Our results can also help explain the apparent mass acquisition in S-doped TlBiSe$_2$.

preprint2015arXiv

Sputtering induced re-emergence of the topological surface state in Bi$_2$Se$_3$

We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be modeled by a unitary impurity distribution, whereas adsorbates, such as water vapor or carbon monoxide, are best described by Gaussian disorder. Remarkably, these two disorder types have a dramatically different effect on the surface states. Our soft x-ray ARPES measurements combined with numerical simulations show that unitary surface disorder pushes the Dirac state to inward quintuplet layers, burying it below an insulating surface layer. As a consequence, the surface spectral function becomes weaker, but retains its quasiparticle peak. This is in contrast to Gaussian disorder, which smears out the quasiparticle peak completely. At the surface of Bi$_2$Se$_3$, the effects of Gaussian disorder can be reduced by removing surface adsorbates using neon sputtering, which, however, introduces unitary scatterers. Since unitary disorder has a weaker effect than Gaussian disorder, the ARPES signal of the Dirac surface state becomes sharper upon sputtering.

preprint2013arXiv

Interband spin-orbit coupling between anti-parallel spin states in Pb quantum well states

Using spin and angle-resolved photoemission spectroscopy we investigate a momentum region in Pb quantum well states on Si(111) where hybridization between Rashba-split bands alters the band structure significantly. Starting from the Rashba regime where the dispersion of the quasi-free two-dimensional electron gas is well described by two spin-polarized parabolas, we find a breakdown of the Rashba behavior which manifests itself (i) in a spin splitting that is no longer proportional to the in-plane momentum and (ii) in a reversal of the sign of the momentum splitting. Our experimental findings are well explained by including interband spin-orbit coupling that mixes Rashba-split states with anti-parallel rather than parallel spins. Similar results for Pb/Cu(111) reveal that the proposed hybridization scenario is independent on the supporting substrate.

preprint2013arXiv

Separating the bulk and surface n- to p-type transition in the topological insulator GeBi(4-x)SbxTe7

We identify the multi-layered compound GeBi4Te7 to be a topological insulator with a freestanding Dirac point, slightly above the valence band maximum, using angle-resolved photoemission spectroscopy (ARPES) measurements. The spin polarization satisffies the time reversal symmetry of the surface states, visible in spin-resolved ARPES. For increasing Sb content in GeBi(4-x)SbxTe7 we observe a transition from n- to p-type in bulk sensitive Seebeck coefficient measurements at a doping of x = 0.6. In surface sensitive ARPES measurements a rigid band shift is observed with Sb doping, accompanied by a movement of the Dirac point towards the Fermi level. Between x = 0.8 and x = 1 the Fermi level crosses the band gap, changing the surface transport regime. This difference of the n- to p-type transition between the surface region and the bulk is caused by band bending effects which are also responsible for a non-coexistence of insulating phases in the bulk and in the near surface region.

preprint2012arXiv

Surface and bulk Fermiology and band dispersion in non-centrosymmetric BiTeI

BiTeI has a layered and non-centrosymmetric structure where strong spin-orbit interaction leads to a giant spin splitting in the bulk bands. Here we present high-resolution angle-resolved photoemission (ARPES) data in the UV and soft x-ray regime that clearly disentangle the surface from the bulk electronic structure. Spin-resolved UV-ARPES measurements on opposite, non-equivalent surfaces show identical spin structures, thus clarifying the surface state character. Soft x-ray ARPES data clearly reveal the spindle-torus shape of the bulk Fermi surface, induced by the spin-orbit interaction.