Researcher profile

Gabriel Landolt

Gabriel Landolt contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2014arXiv

Spin correlated electronic state on the surface of a spin-orbit Mott system (Layered Iridates)

Novel phases of two dimensional electron systems resulting from new surface or interface modified electronic structures have generated significant interest in material science. We utilize photoemission spectroscopy to show that the near-surface electronic structure of a bulk insulating iridate Sr$_3$Ir$_2$O$_7$ lying near metal-Mott insulator transition exhibit weak metallicity signified by finite electronic spectral weight at the Fermi level. The surface electrons exhibit a unique spin structure resulting from an interplay of spin-orbit, Coulomb interaction and surface quantum magnetism, distinct from a topological insulator state. Our results suggest the experimental realization of a novel quasi two dimensional interacting electron surface ground state, opening the door for exotic quantum entanglement and transport phenomena in iridate-based oxide devices.

preprint2013arXiv

Interband spin-orbit coupling between anti-parallel spin states in Pb quantum well states

Using spin and angle-resolved photoemission spectroscopy we investigate a momentum region in Pb quantum well states on Si(111) where hybridization between Rashba-split bands alters the band structure significantly. Starting from the Rashba regime where the dispersion of the quasi-free two-dimensional electron gas is well described by two spin-polarized parabolas, we find a breakdown of the Rashba behavior which manifests itself (i) in a spin splitting that is no longer proportional to the in-plane momentum and (ii) in a reversal of the sign of the momentum splitting. Our experimental findings are well explained by including interband spin-orbit coupling that mixes Rashba-split states with anti-parallel rather than parallel spins. Similar results for Pb/Cu(111) reveal that the proposed hybridization scenario is independent on the supporting substrate.

preprint2013arXiv

Separating the bulk and surface n- to p-type transition in the topological insulator GeBi(4-x)SbxTe7

We identify the multi-layered compound GeBi4Te7 to be a topological insulator with a freestanding Dirac point, slightly above the valence band maximum, using angle-resolved photoemission spectroscopy (ARPES) measurements. The spin polarization satisffies the time reversal symmetry of the surface states, visible in spin-resolved ARPES. For increasing Sb content in GeBi(4-x)SbxTe7 we observe a transition from n- to p-type in bulk sensitive Seebeck coefficient measurements at a doping of x = 0.6. In surface sensitive ARPES measurements a rigid band shift is observed with Sb doping, accompanied by a movement of the Dirac point towards the Fermi level. Between x = 0.8 and x = 1 the Fermi level crosses the band gap, changing the surface transport regime. This difference of the n- to p-type transition between the surface region and the bulk is caused by band bending effects which are also responsible for a non-coexistence of insulating phases in the bulk and in the near surface region.

preprint2013arXiv

Tuning of the Rashba effect in Pb quantum well states via a variable Schottky barrier

Spin-orbit interaction (SOI) in low-dimensional systems results in the fascinating property of spin-momentum locking. In a Rashba system the inversion symmetry normal to the plane of a two-dimensional (2D) electron gas is broken, generating a Fermi surface spin texture reminiscent of spin vortices of different radii. This can be exploited in a spin-based field-effect transistor (spin- FET), where the Rashba system forms a 2D channel between ferromagnetic (FM) source and drain electrodes. The electron spin precesses when propagating through the Rashba channel and spin orientations (anti)parallel to the drain give (low) high conductivity. Crucial is the possibility to tune the momentum splitting, and consequently the precession angle, through an external parameter. Here we show that this can be achieved in Pb quantum well states through the doping dependence of the Schottky barrier, opening up the possibility of a terahertz spin-FET.