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Soonchil Lee

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el physics.app-ph physics.atm-clus

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preprint2020arXiv

Electron spin relaxations of phosphorus donors in bulk silicon under large electric field

Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long coherence times in any realistic experimental conditions. Here, we present pulsed electron spin resonance studies on the longitudinal $(T_1)$ and transverse $(T_2)$ relaxation times of phosphorus donors in bulk silicon with various electric field strengths up to near avalanche breakdown in high magnetic fields of about 1.2 T and low temperatures of about 8 K. We find that the $T_1$ relaxation time is significantly reduced under large electric fields due to electric current, and $T_2$ is affected as the $T_1$ process can dominate decoherence. Furthermore, we show that the magnetoresistance effect in silicon can be exploited as a means to combat the reduction in the coherence times. While qubit coherence times must be much longer than quantum gate times, electrically accelerated $T_1$ can be found useful when qubit state initialization relies on thermal equilibration.

preprint2015arXiv

Microscopic control of $^{29}$ Si nuclear spins near phosphorus donors in silicon

We demonstrate an efficient control of $^{29}$ Si nuclear spin orientation for specific lattice sites near $^{31}$ P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of narrow holes and peaks in the ESR lines of $^{31}$ P. The pattern originates from dynamic polarization the $^{29}$ Si nuclear spins near the donors via the solid effect. This method can be used for initialization of qubits based on $^{29}$ Si nuclear spins in the all-silicon quantum computer. In comparison, polarization of $^{29}$ Si performed by pumping the allowed ESR transitions, did not create any patterns. Instead, a single narrow spectral hole was burnt in the ESR line. The difference is explained by a rapid spin diffusion during the microwave pumping of the allowed transitions.

preprint2014arXiv

Efficient Dynamic Polarization of Phosphorus Nuclei in Silicon in Strong Magnetic Fields and Low Temperatures

We demonstrate that the dynamic nuclear polarization (DNP) of phosphorus donors in silicon can be very effective in a magnetic field of 4.6 T and at temperatures below 1 K. The DNP occurs due to the Overhauser effect following a cross relaxation via the forbidden flip-flop or flip-flip transitions. Nuclear polarization values $P>0.98$ were reached after 20 min of pumping with 0.4 $μ$ W of microwave power. We evaluated that the ratio of hyperfine state populations increased by three orders of magnitude after 2 hours of pumping, and an extremely pure nuclear spin system containing $<10^{-11}$ of the other spin state can be created. An inverted DNP has been obtained by pumping the low field ESR line of P followed by the flip-flip cross relaxation. This transition has much smaller relaxation rate and required substantially longer pumping times. We found that the nuclear polarization dynamics deviates substantially from a simple exponential function. The evolution of the polarization is characterized by two time constants $T^{'}_{ac}\approx$ 15 s in the beginning, and $T^{"}_{ac}\approx$ 1100 s for long pumping time. Temperature dependence of the nuclear relaxation rate of $^{31}$ P was studied down to 0.75 K, below which the relaxation time became too long to be measured. The nuclear polarization followed a bi-exponential time dependence during relaxation. We suggest that the non-exponential behavior of DNP dynamics and the subsequent relaxation is mediated by the nuclei of $^{29}$ Si surrounding $^{31}$ P donors, which affect the transition probabilities of the forbidden cross-relaxation processes.

preprint2014arXiv

Electrical control of large magnetization reversal in a helimagnet

In spite of both technical and fundamental importance, reversal of a macroscopic magnetization by an electric field (E) has been limitedly realized and remains as one of great challenges. Here, we report the realization of modulation and reversal of large magnetization (M) by E in a multiferroic crystal Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22, in which a transverse conical spin state exhibits a remanent M and electric polarization below ~150 K. Upon sweeping E between +- 2 MV/m, M is quasi-linearly varied between +- 2 μB/f.u., resulting in the M reversal. Moreover, the remanent M shows non-volatile changes of ΔM = +- 0.15 μB/f.u., depending on the history of the applied electric fields. The large modulation and the non-volatile two-states of M at zero magnetic field are observable up to ~150 K where the transverse conical spin state is stabilized. Nuclear magnetic resonance measurements provide microscopic evidences that the electric field and the magnetic field play an equivalent role, rendering the volume of magnetic domains change accompanied by the domain wall motion. The present findings point to a new pathway for realizing the large magnetization reversal by electric fields at fairly high temperatures.

preprint2010arXiv

NMR study on the stability of the magnetic ground state in MnCr ${}_2$ O ${}_4$

The canting angles and fluctuation of the magnetic ion spins of spinel oxide MnCr ${}_2$ O ${}_4$ were studied by nuclear magnetic resonance (NMR) at low temperatures, which has a collinear ferrimagnetic order below $T_C$ and a ferrimagnetic spiral order below $T_s < T_C$ . Contrary to previous reports, only one spin canting angle of Cr ions was observed. The spin canting angles of Mn and Cr ions in the ferrimagnetic spiral obtained at a liquid-He temperature were $43\,^{\circ}$ and $110\,^{\circ}$ , respectively. The nuclear spin-spin relaxation was determined by the Suhl-Nakamura interaction at low temperatures but the relaxation rate $T_2^{-1}$ increases rapidly as the temperature approaches $T_s$ . This indicates that the fluctuation of the spiral component becomes faster as the temperature increases but not fast enough to leave an averaged hyperfine field to nuclei in the time scale of nuclear spin precession in the ferrimagnetic phase, which is on the order of $10^{-8}$ s. The spiral volume fraction measured for various temperatures reveals that the collinear and the spiral ferrimagnetic phases are mixed below the transition temperature of the spiral order. The temperature hysteresis in the volume fraction implies that this transition has first-order characteristics.

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Soonchil Lee

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5 publications

Electron spin relaxations of phosphorus donors in bulk silicon under large electric field

Microscopic control of $^{29}$ Si nuclear spins near phosphorus donors in silicon

Efficient Dynamic Polarization of Phosphorus Nuclei in Silicon in Strong Magnetic Fields and Low Temperatures

Electrical control of large magnetization reversal in a helimagnet

NMR study on the stability of the magnetic ground state in MnCr ${}_2$ O ${}_4$

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Soonchil Lee

Research overview

Is this your work?

5 publications

Electron spin relaxations of phosphorus donors in bulk silicon under large electric field

Microscopic control of 29^{29}29Si nuclear spins near phosphorus donors in silicon

Efficient Dynamic Polarization of Phosphorus Nuclei in Silicon in Strong Magnetic Fields and Low Temperatures

Electrical control of large magnetization reversal in a helimagnet

NMR study on the stability of the magnetic ground state in MnCr2{}_22​O4{}_44​

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Building this map preview

Microscopic control of $^{29}$ Si nuclear spins near phosphorus donors in silicon

NMR study on the stability of the magnetic ground state in MnCr ${}_2$ O ${}_4$