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Smitha Vasudevan

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2009arXiv

Coupling optical and electrical gating for electronic read-out of quantum dot dynamics

We explore the coherent transfer of electronic signatures from a strongly correlated, optically gated nanoscale quantum dot to a weakly interacting, electrically backgated microscale channel. In this unique side-coupled `T' geometry for transport, we predict a novel mechanism for detecting Rabi oscillations induced in the dot through quantum, rather than electrostatic means. This detection shows up as a field-tunable split in the Fano lineshape arising due to interference between the dipole coupled dot states and the channel continuum. The split is further modified by the Coulomb interactions within the dot that influence the detuning of the Rabi oscillations. Furthermore, time-resolving the signal we see clear beats when the Rabi frequencies approach the intrinsic Bohr frequencies in the dot. Capturing these coupled dynamics, including memory effects and quantum interference in the channel and the many-body effects in the dot requires coupling a Fock-space master equation for the dot dynamics with the phase-coherent, non-Markovian time-dependent non-equilibrium Green's function (TDNEGF) transport formalism in the channel through a properly evaluated self-energy and a Coulomb integral. The strength of the interactions can further be modulated using a backgate that controls the degree of hybridization and charge polarization at the transistor surface.

preprint2009arXiv

Probing molecule-semiconductor interfaces through Metal Molecule Semiconductor transport characteristics

Electron transfer processes at molecule-semiconductor interfaces involve a complex mixture of thermionic, tunneling and hopping events. Traditionally these processes have been modeled in a piece-meal fashion, relying on phenomenological treatments such as Simmons and Richardson equations that are not vetted in atomistic systems and do not flow seamlessly into each other. We present a unified modeling approach, based on the Non-equilibrium Greens function (NEGF) formalism that allows us to integrate diverse transport regimes and establish a comprehensive quantitative theory. By comparing our simulations with experiments on a metal-molecule-semiconductor junction (varying molecular lengths ~1-3nm), we identify the role of molecular monolayers in tuning the semiconductor band-bending, and thereby overall device conductivity. We find that the principal role of molecules is to act as a voltage divider, altering the Schottky barriers, thereby modulating current levels, voltage-asymmetries and crossover from Schottky to tunneling transport. While this provides an appealingly simple explanation for our observed experimental trends, the calculated shifts in crossover voltages are insufficient to explain the experiments quantitatively. Quantitative correspondence with experiments requires invocation of an additional voltage divider arising from molecular dipoles that further tunes semiconductor band-bending. The extracted dipole moments are rationalized using ab-initio calculations for each molecule, along-with a dilution of packing fraction for the shortest molecular lengths. The methodology described herein can be used to better understand and predict transport characteristics of such junctions.

preprint2008arXiv

Controlling transistor threshold voltages using molecular dipoles

We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignment between the molecular backbone and the reconstructed semiconductor surface atoms.