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Avik Ghosh

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cond-mat.mes-hall cond-mat.mtrl-sci physics.comp-ph

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preprint2016arXiv

First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding

We explore the band structure and ballistic electron transport in twisted bilayer $\textrm{MoS}_2$ using Density Functional Theory (DFT). The sphagetti like bands are unfolded to generate band structures in the primitive unit cell of the original un-twisted $\textrm{MoS}_2$ bilayer and projected onto an individual layer. The corresponding twist angle dependent indirect bandedges are extracted from the unfolded band structures. Based on a comparison within the same primitive unit cell, an efficient two band effective mass model for indirect conduction and valence valleys is created and parameterized by fitting the unfolded band structures. With the two band effective mass model, transport properties - specifically, we calculate the ballistic transmission in arbitrarily twisted bilayer $\textrm{MoS}_2$.

preprint2011arXiv

High efficiency switching using graphene based electron 'optics'

The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel way to directly open a gate-tunable transmission gap across graphene PN junctions (GPNJ) by introducing an additional barrier in the middle that replaces Klein tunneling with regular tunneling, allowing us to electrostatically modulate the current by several orders of magnitude. The gap arises by angularly sorting electrons by their longitudinal energy and filtering out the hottest, normally incident electrons with the tunnel barrier, and the rest through total internal reflection. Using analytical and atomistic numerical studies of quantum transport, we show that the complete filtering of all incident electrons causes the GPNJ to act as a novel metamaterial with a unique gate-tunable transmission-gap that generates a sharp non-thermal switching of electrons. In fact, the transmission gap gradually diminishes to zero as we electrostatically reduce the voltage gradient across the junction towards the homogeneous doping limit. The resulting gate tunable metal-insulator transition enables the electrons to overcome the classic room temperature switching limit of kTln10/q = 60mV/decade for subthreshold conduction.

preprint2009arXiv

Probing molecule-semiconductor interfaces through Metal Molecule Semiconductor transport characteristics

Electron transfer processes at molecule-semiconductor interfaces involve a complex mixture of thermionic, tunneling and hopping events. Traditionally these processes have been modeled in a piece-meal fashion, relying on phenomenological treatments such as Simmons and Richardson equations that are not vetted in atomistic systems and do not flow seamlessly into each other. We present a unified modeling approach, based on the Non-equilibrium Greens function (NEGF) formalism that allows us to integrate diverse transport regimes and establish a comprehensive quantitative theory. By comparing our simulations with experiments on a metal-molecule-semiconductor junction (varying molecular lengths ~1-3nm), we identify the role of molecular monolayers in tuning the semiconductor band-bending, and thereby overall device conductivity. We find that the principal role of molecules is to act as a voltage divider, altering the Schottky barriers, thereby modulating current levels, voltage-asymmetries and crossover from Schottky to tunneling transport. While this provides an appealingly simple explanation for our observed experimental trends, the calculated shifts in crossover voltages are insufficient to explain the experiments quantitatively. Quantitative correspondence with experiments requires invocation of an additional voltage divider arising from molecular dipoles that further tunes semiconductor band-bending. The extracted dipole moments are rationalized using ab-initio calculations for each molecule, along-with a dilution of packing fraction for the shortest molecular lengths. The methodology described herein can be used to better understand and predict transport characteristics of such junctions.