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Sinéad M. Griffin

Sinéad M. Griffin contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2026arXiv

Discovery of a new weberite-type antiferroelectric: La3NbO7

Antiferroelectrics are antipolar materials which possess an electric field-induced phase transition to a polar, ferroelectric phase and offer significant potential for sensing/actuation and energy-storage applications. Known antiferroelectrics are relatively scarce and mainly based on a limited set of perovskite materials and their alloys (e.g., PbZrO$_3$, AgNbO$_3$, NaNbO$_3$). Here, a new family of lead-free, weberite-type antiferroelectrics, identified through a large-scale, first-principles computational search is introduced. The screening methodology, which connects lattice dynamics to antipolar distortions, predicted that La$_3$NbO$_7$ could exhibit antiferroelectricity. We confirm the prediction through the synthesis and characterization of epitaxial La$_3$NbO$_7$ thin films, which display the signature double hysteresis loops of an antiferroelectric material as well as clear evidence of an antipolar ground state structure from transmission electron microscopy. The antiferroelectricity in La$_3$NbO$_7$ is simpler than most known antiferroelectrics and can be explained by a Kittel-type mechanism involving the movement of niobium atoms in an oxygen octahedron through a single phonon mode which results in a smaller change in the volume during the field-induced phase transition. Additionally, it is found that La$_3$NbO$_7$ combines a high threshold field with a high breakdown field ($\approx$ 6MV/cm) - which opens up opportunities for energy-storage applications. This new weberite-type family of materials offers many opportunities to tune electrical and temperature response especially through substitutions on the rare-earth site. Ultimately, this work demonstrates a successful data-driven theory-to-experiment discovery of an entirely new family of antiferroelectrics and provides a blueprint for the future design of ferroic materials.

preprint2022arXiv

A single-projection three-dimensional reconstruction algorithm for scanning transmission electron microscopy data

Increasing interest in three-dimensional nanostructures adds impetus to electron microscopy techniques capable of imaging at or below the nanoscale in three dimensions. We present a reconstruction algorithm that takes as input a focal series of four-dimensional scanning transmission electron microscopy (4D-STEM) data. We apply the approach to a lead iridate, Pb$_2$Ir$_2$O$_7$, and yttrium-stabilized zirconia,Y$_{0.095}$Zr$_{0.905}$O$_2$ , heterostructure from data acquired with the specimen in a single plan-view orientation, with the epitaxial layers stacked along the beam direction. We demonstrate that Pb-Ir atomic columns are visible in the uppermost layers of the reconstructed volume. We compare this approach to the alternative techniques of depth sectioning using differential phase contrast scanning transmission electron microscopy (DPC-STEM) and multislice ptychographic reconstruction.

preprint2022arXiv

Computational needs of quantum mechanical calculations of materials for high-energy physics

Searches for new physics in high-energy physics (HEP) experiments commonly rely on interactions with materials. A burgeoning direction is the accurate calculation and design of materials for HEP applications. In this Snowmass contribution, I briefly motivate the science need for quantum mechanical calculations of materials for HEP and outline the range of questions that such calculations can address. With this information, I assess the computational needs for ab initio calculations in HEP, the specific computational resources and workflows used by state-of-the-art methods, and finally identify promising future directions such as the use of machine learning and strongly-correlated quantum mechanical calculations moving towards materials calculations on quantum computers.

preprint2022arXiv

First principles study of the T-center in Silicon

The T-center in silicon is a well-known carbon-based color center that has been recently considered for quantum technology applications. Using first principles computations, we show that the excited state is formed by a defect-bound exciton made of a localized defect state occupied by an electron to which a hole is bound. The localized state is of strong carbon \textit{p} character and reminiscent of the localization of the unpaired electron in the ethyl radical molecule. The radiative lifetime for the defect-bound exciton is calculated to be on the order of $μ$s, much longer than other quantum defects such as the NV center in diamond and in agreement with experiments. The longer lifetime is associated with the small transition dipole moment as a result of the very different nature of the localized and delocalized states forming the defect-bound exciton. Finally, we use first principles calculations to assess the stability of the T-center. We find the T-center to be stable against decomposition into simpler defects when keeping the stoichiometry fixed. However, we identify that the T-center is easily prone to (de)hydrogenation and so requires very precise annealing conditions (temperature and atmosphere) to be efficiently formed.

preprint2022arXiv

Hard ferromagnetism down to the thinnest limit of iron-intercalated tantalum disulfide

Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak magnetocrystalline anisotropy results in typically soft ferromagnetism. Here, we demonstrate that ferromagnetic order persists down to the thinnest limit of Fe$_x$TaS$_2$ (Fe-intercalated bilayer 2H-TaS$_2$) with giant coercivities up to 3 tesla. We prepare Fe-intercalated TaS$_2$ by chemical intercalation of van der Waals layered 2H-TaS$_2$ crystals and perform variable-temperature quantum transport, transmission electron microscopy, and confocal Raman spectroscopy measurements to shed new light on the coupled effects of dimensionality, degree of intercalation, and intercalant order/disorder on the hard ferromagnetic behavior of Fe$_x$TaS$_2$. More generally, we show that chemical intercalation gives access to a rich synthetic parameter space for low-dimensional magnets, in which magnetic properties can be tailored by the choice of the host material and intercalant identity/amount, in addition to the manifold distinctive degrees of freedom available in atomically thin, van der Waals crystals.

preprint2021arXiv

Elucidating the local atomic and electronic structure of amorphous oxidized superconducting niobium films

Qubits made from superconducting materials are a mature platform for quantum information science application such as quantum computing. However, materials-based losses are now a limiting factor in reaching the coherence times needed for applications. In particular, knowledge of the atomistic structure and properties of the circuit materials is needed to identify, understand, and mitigate materials-based decoherence channels. In this work we characterize the atomic structure of the native oxide film formed on Nb resonators by comparing fluctuation electron microscopy experiments to density functional theory calculations, finding that an amorphous layer consistent with an Nb$_2$O$_5$ stoichiometry. Comparing X-ray absorption measurements at the Oxygen K edge with first-principles calculations, we find evidence of d-type magnetic impurities in our sample, known to cause impedance in proximal superconductors. This work identifies the structural and chemical composition of the oxide layer grown on Nb superconductors, and shows that soft X-ray absorption can fingerprint magnetic impurities in these superconducting systems.

preprint2021arXiv

Manipulation of spin orientation via ferroelectric switching in Fe-doped Bi2WO6 from first principles

Atomic-scale control of spins by electric fields is highly desirable for future technological applications. Magnetically-doped Aurivillius-phase oxides present one route to achieve this, with magnetic ions substituted into the ferroelectric structure at dilute concentrations, resulting in spin-charge coupling. However, there has been minimal exploration of the ferroelectric switching pathways in this materials class, limiting predictions of the influence of an electric field on the magnetic spins in the structure. Here, we determine the ferroelectric switching pathways of the end member of the Aurivilius phase family, Bi2WO6, using a combination of group theoretic analysis and density functional theory calculations. We find that in the ground state P21ab phase, a two-step switching pathway via C2 and Cm intermediate phases provides the lowest energy barrier. Considering iron substitutions on the W-site in Bi2WO6, we determine the spin easy axis. By tracking the change in spin directionality during ferroelectric switching, we find that a 90 degree switch in the polarization direction leads to a 112 degree reorientation of the spin easy axis. The low symmetry crystal-field environment of Bi2WO6 and magnetoelastic coupling on the magnetic dopant provide a route to spin control via and applied electric field.

preprint2020arXiv

Layer-Dependent Topological Phase in a Two-Dimensional Quasicrystal and Approximant

Electronic and topological properties of materials are derived from the interplay between crystalline symmetry and dimensionality. Simultaneously introducing 'forbidden' symmetries via quasiperiodic ordering with low-dimensionality into a material system promises the emergence of new physical phenomena. Here, we isolate a two-dimensional chalcogenide quasicrystal and approximant, and investigate associated electronic and topological properties. Ultra-thin two-dimensional layers of the materials with a composition close to Ta1.6Te, derived from a layered transition metal dichalcogenide, are isolated with standard exfoliation techniques and investigated with electron diffraction and atomic-resolution scanning transmission electron microscopy. Density functional theory calculations and symmetry analysis of the large unit-cell crystalline approximant of the quasicrystal Ta21Te13 reveal the presence of symmetry protected nodal crossings in the quasicrystalline and approximate phases whose presence is tunable by layer number. Our study provides a platform for the exploration of physics in quasicrystalline low-dimensional materials and the interconnected nature of topology, dimensionality and symmetry in electronic systems.

preprint2020arXiv

Prediction of Tunable Spin-Orbit Gapped Materials for Dark Matter Detection

New ideas for low-mass dark matter direct detection suggest that narrow band gap materials, such as Dirac semiconductors, are sensitive to the absorption of meV dark matter or the scattering of keV dark matter. Here we propose spin-orbit semiconductors - materials whose band gap arises due to spin-orbit coupling - as low-mass dark matter targets owing to their ~10 meV band gaps. We present three material families that are predicted to be spin-orbit semiconductors using Density Functional Theory (DFT), assess their electronic and topological features, and evaluate their use as low-mass dark matter targets. In particular, we find that that the tin pnictide compounds are especially suitable having a tunable range of meV-scale band gaps with anisotropic Fermi velocities allowing directional detection. Finally, we address the pitfalls in the DFT methods that must be considered in the ab initio prediction of narrow-gapped materials, including those close to the topological critical point.