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Researcher profile

Geoffroy Hautier

Geoffroy Hautier contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phquant-phphysics.optics

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Published work

8 published item(s)

preprint2026arXiv

Discovery of a new weberite-type antiferroelectric: La3NbO7

Antiferroelectrics are antipolar materials which possess an electric field-induced phase transition to a polar, ferroelectric phase and offer significant potential for sensing/actuation and energy-storage applications. Known antiferroelectrics are relatively scarce and mainly based on a limited set of perovskite materials and their alloys (e.g., PbZrO$_3$, AgNbO$_3$, NaNbO$_3$). Here, a new family of lead-free, weberite-type antiferroelectrics, identified through a large-scale, first-principles computational search is introduced. The screening methodology, which connects lattice dynamics to antipolar distortions, predicted that La$_3$NbO$_7$ could exhibit antiferroelectricity. We confirm the prediction through the synthesis and characterization of epitaxial La$_3$NbO$_7$ thin films, which display the signature double hysteresis loops of an antiferroelectric material as well as clear evidence of an antipolar ground state structure from transmission electron microscopy. The antiferroelectricity in La$_3$NbO$_7$ is simpler than most known antiferroelectrics and can be explained by a Kittel-type mechanism involving the movement of niobium atoms in an oxygen octahedron through a single phonon mode which results in a smaller change in the volume during the field-induced phase transition. Additionally, it is found that La$_3$NbO$_7$ combines a high threshold field with a high breakdown field ($\approx$ 6MV/cm) - which opens up opportunities for energy-storage applications. This new weberite-type family of materials offers many opportunities to tune electrical and temperature response especially through substitutions on the rare-earth site. Ultimately, this work demonstrates a successful data-driven theory-to-experiment discovery of an entirely new family of antiferroelectrics and provides a blueprint for the future design of ferroic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

CaCd$_2$P$_2$: A Visible-Light Absorbing Zintl Phosphide Stable under Photoelectrochemical Water Oxidation

A key bottleneck to solar fuels is the absence of stable and strongly absorbing photoelectrode materials for the oxygen evolution reaction (OER). Modern approaches generally trade off between stable but weakly absorbing materials, such as wide bandgap oxides, or strongly absorbing materials that rely on encapsulation for stability and are weakly catalytic, such as the III-V family of semiconductors. Of interest are materials like transition metal phosphides, such as FeP$_2$, that are known to undergo beneficial in situ surface transformations in the oxidative environment of OER, though stability has remained a primary hurdle. Here we report on CaCd$_2$P$_2$, a Zintl phase visible-light absorber with favorable 1.6 eV bandgap, that we identified using high-throughput computational screening. Using a combination of photoelectrochemical measurements, microscopy, and spectroscopy, we show that CaCd$_2$P$_2$ undergoes a light-stabilized surface transformation that renders it stable under alkaline OER conditions. We also show that the well known OER catalyst CoPi can act as a stable co-catalyst in synergy with the \textit{in-situ} CaCd$_2$P$_2$ surface. The light-induced stabilization that CaCd$_2$P$_2$ displays is in sharp contrast to the photocorrosion commonly observed in visible light-absorbing photoelectrodes. The broader AM$_2$P$_2$ family of Zintl phases offers a significant opportunity to explore stabilizing interface chemistry and re-design the manner in which low-bandgap semiconductors are used for photoelectrochemical energy conversion.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Silicon T centre hyperfine structure and memory protection schemes

Combining the long-coherence of spin qubits and the capability to transmit information and entanglement through photons, spin-photon interfaces (SPIs) are a promising platform for networked quantum computation and long-distance quantum communication. SPIs that possess local `memory' qubits in addition to the optically coupled `communication' qubit can improve remote entanglement fidelities through brokered entanglement schemes and entanglement purification. In these schemes, it is critical to protect the memory qubit from decoherence during entanglement operations on the communications qubit. Silicon, a platform with mature microelectronic and nanophotonic fabrication, is host to the T centre, an SPI with emission in the telecommunications O-band that directly integrates with silicon nanophotonics. Cavity-coupled T centres are a platform for brokered entanglement distribution in silicon photonic circuits and over long-distance optical fibre links. The T centre's electron and nuclear spin qubits are an intrinsic register of communication and memory qubits respectively, with anisotropic hyperfine coupling. In this work we determine the T centre's hydrogen hyperfine coupling tensor. We also introduce schemes to protect against dephasing or eliminate relaxation of the T centre's hydrogen memory qubit during optical excitation. These results address a key challenge for practical T centre quantum networks.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

First principles study of the T-center in Silicon

The T-center in silicon is a well-known carbon-based color center that has been recently considered for quantum technology applications. Using first principles computations, we show that the excited state is formed by a defect-bound exciton made of a localized defect state occupied by an electron to which a hole is bound. The localized state is of strong carbon \textit{p} character and reminiscent of the localization of the unpaired electron in the ethyl radical molecule. The radiative lifetime for the defect-bound exciton is calculated to be on the order of $μ$s, much longer than other quantum defects such as the NV center in diamond and in agreement with experiments. The longer lifetime is associated with the small transition dipole moment as a result of the very different nature of the localized and delocalized states forming the defect-bound exciton. Finally, we use first principles calculations to assess the stability of the T-center. We find the T-center to be stable against decomposition into simpler defects when keeping the stoichiometry fixed. However, we identify that the T-center is easily prone to (de)hydrogenation and so requires very precise annealing conditions (temperature and atmosphere) to be efficiently formed.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

SnP$_2$S$_6$: A Promising Infrared Nonlinear Optical Crystal with Strong Non-Resonant Second Harmonic Generation and Phase-matchability

High-power infrared laser systems with broadband tunability are of great importance due to their wide range of applications in spectroscopy and free-space communications. These systems require nonlinear optical (NLO) crystals for wavelength up/down conversion using sum/difference frequency generation, respectively. NLO crystals need to satisfy many competing criteria, including large nonlinear optical susceptibility, large laser induced damage threshold (LIDT), wide transparency range and phase-matchability. Here, we report bulk single crystals of SnP_2S_6 with a large non-resonant SHG coefficient of d33= 53 pm/V at 1550nm and a large LIDT of 350 GW/cm^2 for femtosecond laser pulses. It also exhibits a broad transparency range from 0.54 μm to 8.5μm (bandgap of ~2.3 eV) and can be both Type I and Type II phase-matched. The complete linear and SHG tensors are measured as well as predicted by first principles calculations, and they are in excellent agreement. A proximate double-resonance condition in the electronic band structure for both the fundamental and the SHG light is shown to enhance the non-resonant SHG response. Therefore, SnP2S6 is an outstanding candidate for infrared laser applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Boron phosphide as a \emph{p}-type transparent conductor: optical absorption and transport through electron-phonon coupling

Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will affect its transparency. In this work, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify the potential of boron phosphide as a \emph{p}-type transparent conductor. We find that phonon-mediated indirect optical absorption is weak in the visible spectrum and that the phonon-limited hole mobility is very high (around 900 cm$^2$/Vs) at room temperature. This exceptional mobility comes from a combination of low hole effective mass and very weak scattering by polar phonon modes. We rationalize the weak scattering by the less ionic bonding in boron phosphide compared to oxides. We suggest this could be a general advantage of non-oxides for \emph{p}-type transparent conducting applications. Using our computed properties, we assess the transparent conductor figure of merit of boron phosphide and shows that it exceeds by one order of magnitude that of established \emph{p}-type transparent conductors, confirming the potential of this material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Combining phonon accuracy with high transferability in Gaussian approximation potential models

Machine learning driven interatomic potentials, including Gaussian approximation potential (GAP) models, are emerging tools for atomistic simulations. Here, we address the methodological question of how one can fit GAP models that accurately predict vibrational properties in specific regions of configuration space, whilst retaining flexibility and transferability to others. We use an adaptive regularization of the GAP fit that scales with the absolute force magnitude on any given atom, thereby exploring the Bayesian interpretation of GAP regularization as an "expected error", and its impact on the prediction of physical properties for a material of interest. The approach enables excellent predictions of phonon modes (to within 0.1-0.2 THz) for structurally diverse silicon allotropes, and it can be coupled with existing fitting databases for high transferability. These findings and workflows are expected to be useful for GAP-driven materials modeling more generally.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ferroelectricity and multiferroicity in anti-Ruddlesden-Popper structures

Combining ferroelectricity with other properties such as visible light absorption or long-range magnetic order requires the discovery of new families of ferroelectric materials. Here, through the analysis of a high-throughput database of phonon band structures, we identify a new structural family of anti-Ruddlesden-Popper phases A$_4$X$_2$O (A=Ca, Sr, Ba, Eu, X=Sb, P, As, Bi) showing ferroelectric and anti-ferroelectric behaviors. The discovered ferroelectrics belong to the new class of hyperferroelectrics which polarize even under open-circuit boundary conditions. The polar distortion involves the movement of O anions against apical A cations and is driven by geometric effects resulting from internal chemical strains. Within this new structural family, we show that Eu$_4$Sb$_2$O combines coupled ferromagnetic and ferroelectric order at the same atomic site, a very rare occurrence in materials physics.

0 citations0 reviewsNo code linkedOpen access