Source author record

Simone Latini

Simone Latini appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

10works
6topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

10 published item(s)

preprint2022arXiv

Common microscopic origin of the phase transitions in Ta$_2$NiS$_5$ and the excitonic insulator candidate Ta$_2$NiSe$_5$

The structural phase transition in Ta$_2$NiSe$_5$ has been envisioned as driven by the formation of an excitonic insulating phase. However, the role of structural and electronic instabilities on crystal symmetry breaking has yet to be disentangled. Meanwhile, the phase transition in its complementary material Ta$_2$NiS$_5$ does not show any experimental hints of an excitonic insulating phase. We present a microscopic investigation of the electronic and phononic effects involved in the structural phase transition in Ta$_2$NiSe$_5$ and Ta$_2$NiS$_5$ using extensive first-principles calculations. In both materials the crystal symmetries are broken by phonon instabilities, which in turn lead to changes in the electronic bandstructure also observed in experiment. A total energy landscape analysis shows no tendency towards a purely electronic instability and we find that a sizeable lattice distortion is needed to open a bandgap. We conclude that an excitonic instability is not needed to explain the phase transition in both Ta$_2$NiSe$_5$ and Ta$_2$NiS$_5$.

preprint2022arXiv

Unconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide

Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter physics and material science. In low-dimensional materials, unique electronic properties for these correlated states could significantly affect their optical properties. Herein, combining photoluminescence, optical reflection measurements and theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP$_2$), in which the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus$-$phosphorus chains and holes extended in two-dimensional SiP$_2$ layers. The excitonic state and the emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Within the $GW$ plus Bethe$-$Salpeter equation calculations and solving the generalized Holstein model non-perturbatively, we confirm that the observed sideband feature results from the correlated interaction between excitons and optical phonons. Such a layered material provides a new platform to study excitonic physics and many-particle effects.

preprint2021arXiv

Correlation-driven sub-3 fs charge migration in ionised adenine

Sudden ionisation of a relatively large molecule can initiate a correlation-driven process dubbed charge migration, where the electron density distribution is expected to rapidly change. Capturing this few-femtosecond/attosecond charge redistribution represents the real-time observation of the electron correlation in the molecule. So far, there has been no experimental evidence of this process. Here we report on a time-resolved study of the correlation-driven charge migration process occurring in the bio-relevant molecule adenine after ionisation by a 15-35 eV attosecond pulse . We find that, the production of intact doubly charged adenine - via a shortly-delayed laser-induced second ionisation event - represents the signature of a charge inflation mechanism resulting from the many-body excitation. This conclusion is supported by first-principles time-dependent simulations. Our findings opens new important perspectives for the control of the molecular reactivity at the electronic timescale.

preprint2020arXiv

Nature of symmetry breaking at the excitonic insulator transition: Ta$_2$NiSe$_5$

Ta$_2$NiSe$_5$ is one of the most promising materials for hosting an excitonic insulator ground state. While a number of experimental observations have been interpreted in this way, the precise nature of the symmetry breaking occurring in Ta$_2$NiSe$_5$, the electronic order parameter, and a realistic microscopic description of the transition mechanism are, however, missing. By a symmetry analysis based on first-principles calculations, we uncover the \emph{discrete} lattice symmetries which are broken at the transition. We identify a purely electronic order parameter of excitonic nature that breaks these discrete crystal symmetries and contributes to the experimentally observed lattice distortion from an orthorombic to a monoclinic phase. Our results provide a theoretical framework to understand and analyze the excitonic transition in Ta$_2$NiSe$_5$ and settle the fundamental questions about symmetry breaking governing the spontaneous formation of excitonic insulating phases in solid-state materials.

preprint2020arXiv

Room Temperature Terahertz Electroabsorption Modulation by Excitons in Monolayer Transition Metal Dichalcogenides

The interaction between off-resonant laser pulses and excitons in monolayer transition metal dichalcogenides is attracting increasing interest as a route for the valley-selective coherent control of the exciton properties. Here, we extend the classification of the known off-resonant phenomena by unveiling the impact of a strong THz field on the excitonic resonances of monolayer MoS$_2$. We observe that the THz pump pulse causes a selective modification of the coherence lifetime of the excitons, while keeping their oscillator strength and peak energy unchanged. We rationalize these results theoretically by invoking a hitherto unobserved manifestation of the Franz-Keldysh effect on an exciton resonance. As the modulation depth of the optical absorption reaches values as large as 0.05 dB/nm at room temperature, our findings open the way to the use of semiconducting transition metal dichalcogenides as compact and efficient platforms for high-speed electroabsorption devices.

preprint2020arXiv

The spontaneous symmetry breaking in Ta$_2$NiSe$_5$ is structural in nature

The excitonic insulator is an electronically-driven phase of matter that emerges upon the spontaneous formation and Bose condensation of excitons. Detecting this exotic order in candidate materials is a subject of paramount importance, as the size of the excitonic gap in the band structure establishes the potential of this collective state for superfluid energy transport. However, the identification of this phase in real solids is hindered by the coexistence of a structural order parameter with the same symmetry as the excitonic order. Only a few materials are currently believed to host a dominant excitonic phase, Ta$_2$NiSe$_5$ being the most promising. Here, we test this scenario by using an ultrashort laser pulse to quench the broken-symmetry phase of this transition metal chalcogenide. Tracking the dynamics of the material's electronic and crystal structure after light excitation reveals surprising spectroscopic fingerprints that are only compatible with a primary order parameter of phononic nature. We rationalize our findings through state-of-the-art calculations, confirming that the structural order accounts for most of the electronic gap opening. Not only do our results uncover the long-sought mechanism driving the phase transition of Ta$_2$NiSe$_5$, but they also conclusively rule out any substantial excitonic character in this instability.

preprint2020arXiv

Vibrational coherent control of localized d-d electronic excitation

Addressing the role of quantum coherence in the interplay between the different matter constituents (electrons, phonons and spin) is a critical step towards understanding transition metal oxides and design complex materials with new functionalities. Here we use coherent vibrational control of onsite d-d electronic transitions in a model edge-sharing insulating transition metal oxide (CuGeO3) to single-out the effects of vibrational coherence in electron-phonon coupling. By comparing time domain experiments based on high and low frequency ultrashort pumps with a fully quantum description of phonon assisted absorption, we could distinguish the processes associated to incoherent thermal lattice fluctuations from those driven by the coherent motion of the atoms. In particular, while thermal fluctuation of the phonon bath uniformly increases the electronic absorption, the resonant excitation of phonon modes results also in light-induced transparency which is coherently controlled by the vibrational motion.

preprint2016arXiv

Field-induced dissociation of excitons in two-dimensional MoS$_{2}$/hBN heterostructures

Atomically thin semi-conductors are characterized by strongly bound excitons which govern the optical properties of the materials below and near the band edge. Efficient conversion of photons into electrical current requires, as a first step, the dissociation of the exciton into free electrons and holes. Here we calculate the dissociation rates of excitons in monolayer MoS$_2$ as a function of an applied in-plane electric field. The dissociation rates are obtained as the inverse lifetime of the resonant states of a two-dimensional Hydrogenic Hamiltonian which describes the exciton within the Mott-Wannier model. The resonances are computed using complex scaling, and the effective masses and screened electron-hole interaction defining the Hydrogenic Hamiltonian are computed from first-principles. For field strengths above 0.1 V/nm the dissociation lifetime is shorter than 1 picosecond, which is shorter than the lifetime of other, competing, decay mechanisms. Interestingly, encapsulation of the \moly layer in just two layers of hBN, enhances the dissociation rate by around one order of magnitude due to the increased screening showing that dielectric engineering is an effective way to control exciton lifetimes in two-dimensional materials.

preprint2015arXiv

Excitons in van der Waals heterostructures: The important role of dielectric screening

The existence of strongly bound excitons is one of the hallmarks of the newly discovered atomically thin semi-conductors. While it is understood that the large binding energy is mainly due to the weak dielectric screening in two dimensions (2D), a systematic investigation of the role of screening on 2D excitons is still lacking. Here we provide a critical assessment of a widely used 2D hydrogenic exciton model which assumes a dielectric function of the form ε(q) = 1 + 2παq, and we develop a quasi-2D model with a much broader applicability. Within the quasi-2D picture, electrons and holes are described as in-plane point charges with a finite extension in the perpendicular direction and their interaction is screened by a dielectric function with a non-linear q-dependence which is computed ab-initio. The screened interaction is used in a generalized Mott-Wannier model to calculate exciton binding energies in both isolated and supported 2D materials. For isolated 2D materials, the quasi-2D treatment yields results almost identical to those of the strict 2D model and both are in good agreement with ab-initio many-body calculations. On the other hand, for more complex structures such as supported layers or layers embedded in a van der Waals heterostructure, the size of the exciton in reciprocal space extends well beyond the linear regime of the dielectric function and a quasi-2D description has to replace the 2D one. Our methodology has the merit of providing a seamless connection between the strict 2D limit of isolated monolayer materials and the more bulk-like screening characteristics of supported 2D materials or van der Waals heterostructures.

preprint2015arXiv

Simple Screened Hydrogen Model of Excitons in Two-Dimensional Materials

We present a generalized hydrogen model for the binding energies ($E_B$) of excitons in two-dimensional (2D) materials that sheds light on the fundamental differences between excitons in two and three dimensions. In contrast to the well-known hydrogen model of three-dimensional (3D) excitons, the description of 2D excitons is complicated by the fact that the screening cannot be assumed to be local. We show that one can consistently define an effective 2D dielectric constant by averaging the screening over the extend of the exciton. For an ideal 2D semiconductor this leads to a simple expression for $E_B$ that only depends on the excitonic mass and the 2D polarizability $α$. The model is shown to produce accurate results for 51 transition metal dichalcogenides. Remarkably, over a wide range of polarizabilities the expression becomes independent of the mass and we obtain $E_B^{2D}\approx3/(4πα)$, which explains the recently observed linear scaling of exciton binding energies with band gap. It is also shown that the model accurately reproduces the non-hydrogenic Rydberg series in WS$_2$ and can account for screening from the environment.