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Researcher profile

Simona Achilli

Simona Achilli contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.othercond-mat.str-el

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Published work

3 published item(s)

preprint2022arXiv

Steric hindrance in the on-surface synthesis of diethynyl-linked anthracene polymers

Hybrid sp-sp2 structures can be efficiently obtained on metal substrates via on-surface synthesis. The choice of both the precursor and of the substrate impacts on the effectiveness of the process and the stability of the formed structures. Here we demonstrate that using anthracene-based molecules as precursor, the formation on Au(111) of polymers hosting sp carbon chains is affected by the steric hindrance between aromatic groups. In particular, by scanning tunneling microscopy and density functional theory calculations we show that the de-metalation of organometallic structures induces a lateral separation of adjacent polymers preventing the formation of ordered domains.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Photoinduced coherent modulation of an excitonic resonance via coupling with coherent optical phonons

The coupling of excitons with atomic vibrations plays a pivotal role on the nonequilibrium optical properties of layered semiconductors. However, addressing the dynamical interaction between excitons and phonons represents a hard task both experimentally and theoretically. By means of time-resolved broadband optical reflectivity combined with state-of-the-art ab-initio calculations of a bismuth triiodide single crystal, we unravel the universal spectral fingerprints of exciton--phonon coupling in layered semiconductors. Furthermore, we microscopically relate a photoinduced coherent energy modulation of the excitonic resonance to coherent optical phonons, thereby tracking the extent of the photoinduced atomic displacement in real-space. Our findings represent a step forward on the road to coherent manipulation of the excitonic properties on ultrafast timescales.

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preprint2021arXiv

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

0 citations0 reviewsNo code linkedOpen access