Researcher profile

Nicola Manini

Nicola Manini contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

Steric hindrance in the on-surface synthesis of diethynyl-linked anthracene polymers

Hybrid sp-sp2 structures can be efficiently obtained on metal substrates via on-surface synthesis. The choice of both the precursor and of the substrate impacts on the effectiveness of the process and the stability of the formed structures. Here we demonstrate that using anthracene-based molecules as precursor, the formation on Au(111) of polymers hosting sp carbon chains is affected by the steric hindrance between aromatic groups. In particular, by scanning tunneling microscopy and density functional theory calculations we show that the de-metalation of organometallic structures induces a lateral separation of adjacent polymers preventing the formation of ordered domains.

preprint2022arXiv

Thermal Friction Enhancement in Zwitterionic Monolayers

We introduce a model for zwitterionic monolayers and investigate its tribological response to changes in applied load, sliding velocity, and temperature by means of molecular-dynamics simulations. The proposed model exhibits different regimes of motion depending on temperature and sliding velocity. We find a remarkable increase of friction with temperature, which we attribute to the formation and rupture of transient bonds between individual molecules of opposite sliding layers, triggered by the out-of-plane thermal fluctuations of the molecules' orientations. To highlight the effect of the molecular charges, we compare these results with analogous simulations for the charge-free system. These findings are expected to be relevant to nanoscale rheology and tribology experiments of locally-charged lubricated systems such as, e.g., experiments performed on zwitterionic monolayers, phospholipid micelles, or confined polymeric brushes in a surface force apparatus.

preprint2021arXiv

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.