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Simon Watkins

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Published work

2 published item(s)

preprint2022arXiv

Understanding occupants' behaviour, engagement, emotion, and comfort indoors with heterogeneous sensors and wearables

We conducted a field study at a K-12 private school in the suburbs of Melbourne, Australia. The data capture contained two elements: First, a 5-month longitudinal field study In-Gauge using two outdoor weather stations, as well as indoor weather stations in 17 classrooms and temperature sensors on the vents of occupant-controlled room air-conditioners; these were collated into individual datasets for each classroom at a 5-minute logging frequency, including additional data on occupant presence. The dataset was used to derive predictive models of how occupants operate room air-conditioning units. Second, we tracked 23 students and 6 teachers in a 4-week cross-sectional study En-Gage, using wearable sensors to log physiological data, as well as daily surveys to query the occupants' thermal comfort, learning engagement, emotions and seating behaviours. Overall, the combined dataset could be used to analyse the relationships between indoor/outdoor climates and students' behaviours/mental states on campus, which provide opportunities for the future design of intelligent feedback systems to benefit both students and staff.

preprint2016arXiv

Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors

We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$, $0.4~\text{ms}$ and $1.2~\text{ms}$, respectively. In GaAs and InP at low magnetic field, up to $\sim2~\text{T}$, the spin-relaxation mechanism is strongly density and temperature dependent and is attributed to the random precession of the electron spin in hyperfine fields caused by the lattice nuclear spins. In all three semiconductors at high magnetic field, we observe a power-law dependence ${T_1 \propto B^{-ν}}$ with ${3\lesssim ν\lesssim 4}$. Our theory predicts that the direct spin-phonon interaction is important in all three materials in this regime in contrast to quantum dot structures. In addition, the "admixture" mechanism caused by Dresselhaus spin-orbit coupling combined with single-phonon processes has a comparable contribution in GaAs. We find excellent agreement between high-field theory and experiment for GaAs and CdTe with no free parameters, however a significant discrepancy exists for InP.