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Silke H. Christiansen

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Published work

2 published item(s)

preprint2016arXiv

Photonic light trapping in silicon nanowire arrays: deriving and overcoming the physical limitations

Hexagonally aligned, free-standing silicon nanowire (SiNW) arrays serve as photonic resonators which, as compared to a silicon (Si) thin film, do not only absorb more visible (VIS) and near-infrared (NIR) light, but also show an inherent photonic light concentration that enhances their performance as solar absorbers. Using numerical simulations we show, how light concentration is induced by high optical cross sections of the individual SiNWs but cannot be optimized independently of the SiNW array absorption. While an ideal spatial density exists, for which the SiNW array absorption for VIS and NIR wavelengths reaches a maximum, the spatial correlation of SiNWs in an array suppresses the formation of optical Mie modes responsible for light concentration. We show that different from SiNWs with straight sidewalls, arrays of inverted silicon nanocones (SiNCs) permit to avoid the mode suppression. In fact they give rise to an altered set of photonic modes which is induced by the spatial correlation of SiNCs in the array, and therefore show a higher degree of freedom to independently optimize light absorption and light concentration. Apart from explaining the good light absorbing and concentrating properties of SiNC arrays, the work justifies a revaluation of SiNW arrays as optical absorbers.

preprint2015arXiv

Observation of strongly enhanced photoluminescence from inverted cone-shaped silicon nanostuctures

Silicon nanowires (SiNWs) attached to a wafer substrate are converted to inversely tapered silicon nanocones (SiNCs). After excitation with visible light, individual SiNCs show a 200-fold enhanced integral band-to-band luminescence as compared to a straight SiNW reference. Furthermore, the reverse taper is responsible for multifold emission peaks in addition to the relatively broad nearinfrared (NIR) luminescence spectrum. A thorough numerical mode analysis reveals that unlike a SiNW the inverted SiNC sustains a multitude of leaky whispering gallery modes. The modes are unique to this geometry and they are characterized by a relatively high quality factor ($Q = 1300$) and a low mode volume ($0.2 < (λ/n_{eff})^3 < 4$). In addition they show a vertical out coupling of the optically excited NIR luminescence with a numerical aperture as low as 0.22. Estimated Purcell factors $F_p \propto Q/V_m$ of these modes can explain the enhanced luminescence in individual emission peaks as compared to the SiNW reference. Investigating the relation between the SiNC geometry and the mode formation leads to simple design rules that permit to control the number and wavelength of the hosted modes and therefore the luminescent emission peaks.