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George Sarau

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2 published item(s)

preprint2019arXiv

Towards Polarization-based Excitation Tailoring for Extended Raman Spectroscopy

Undoubtedly, Raman spectroscopy is one of the most elaborated spectroscopy tools in materials science, chemistry, medicine and optics. However, when it comes to the analysis of nanostructured specimens, accessing the Raman spectra resulting from an exciting electric field component oriented perpendicularly to the substrate plane is a difficult task and conventionally can only be achieved by mechanically tilting the sample, or by sophisticated sample preparation. Here, we propose a novel experimental method based on the utilization of polarization tailored light for Raman spectroscopy of individual nanostructures. As a proof of principle, we create three-dimensional electromagnetic field distributions at the nanoscale using tightly focused cylindrical vector beams impinging normally onto the specimen, hence keeping the conventional beam-path of commercial Raman systems. Using this excitation scheme, we experimentally show that the recorded Raman spectra of individual gallium-nitride nanostructures of sub-wavelength diameter used as a test platform depend sensitively on their location relative to the focal vector field. The observed Raman spectra can be attributed to the interaction with transverse or longitudinal electric field components. This novel technique may pave the way towards a characterization of Raman active nanosystems using full information of all Raman modes.

preprint2015arXiv

Observation of strongly enhanced photoluminescence from inverted cone-shaped silicon nanostuctures

Silicon nanowires (SiNWs) attached to a wafer substrate are converted to inversely tapered silicon nanocones (SiNCs). After excitation with visible light, individual SiNCs show a 200-fold enhanced integral band-to-band luminescence as compared to a straight SiNW reference. Furthermore, the reverse taper is responsible for multifold emission peaks in addition to the relatively broad nearinfrared (NIR) luminescence spectrum. A thorough numerical mode analysis reveals that unlike a SiNW the inverted SiNC sustains a multitude of leaky whispering gallery modes. The modes are unique to this geometry and they are characterized by a relatively high quality factor ($Q = 1300$) and a low mode volume ($0.2 < (λ/n_{eff})^3 < 4$). In addition they show a vertical out coupling of the optically excited NIR luminescence with a numerical aperture as low as 0.22. Estimated Purcell factors $F_p \propto Q/V_m$ of these modes can explain the enhanced luminescence in individual emission peaks as compared to the SiNW reference. Investigating the relation between the SiNC geometry and the mode formation leads to simple design rules that permit to control the number and wavelength of the hosted modes and therefore the luminescent emission peaks.