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Signe S. Grønborg

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.mes-hall

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preprint2016arXiv

Single-layer MoS $_2$ on Au(111): band gap renormalization and substrate interaction

The electronic structure of epitaxial single-layer MoS $_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At $\barΓ$ , the valence band maximum has a significantly higher binding energy than in the free MoS $_2$ layer and the expected spin-degeneracy of the uppermost valence band at the $\bar{M}$ point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS $_2$ orbitals with the substrate.

preprint2015arXiv

Growth and electronic structure of epitaxial single-layer WS $_2$ on Au(111)

Large-area single-layer WS $_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H $_2$ S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be significantly higher than at $\barΓ$ . The observed dispersion around $\bar{K}$ is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at $\barΓ$ are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the $\bar{K}$ points, with a maximum splitting of 419(11)~meV. The valence band dispersion around $\bar{K}$ is found to be highly anisotropic with spin-branch dependent effective hole masses of $0.40(02)m_e$ and $0.57(09)m_e$ for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS $_2$ a promising alternative to the widely studied MoS $_2$ for applications in electronics, spintronics and valleytronics.

preprint2015arXiv

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS $_2$

The dynamics of excited electrons and holes in single layer (SL) MoS $_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS $_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS $_2$ . This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.

preprint2015arXiv

Synthesis of Epitaxial Single-Layer MoS $_2$ on Au(111)

We present a method for synthesizing large area epitaxial single-layer MoS $_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS $_2$ islands to a continuous MoS $_2$ layer. An exceptionally good control over the MoS $_2$ coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS $_2$ nano-islands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within these MoS $_2$ islands, we identify domains rotated by 60 $^{\circ}$ that lead to atomically sharp line defects at domain boundaries. As the MoS $_2$ coverage approaches the limit of a complete single-layer, the formation of bilayer MoS $_2$ islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS $_2$ samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS $_2$ layer from vacuum is not found to affect its quality.

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Signe S. Grønborg

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4 publications

Single-layer MoS $_2$ on Au(111): band gap renormalization and substrate interaction

Growth and electronic structure of epitaxial single-layer WS $_2$ on Au(111)

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS $_2$

Synthesis of Epitaxial Single-Layer MoS $_2$ on Au(111)

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Signe S. Grønborg

Research overview

Is this your work?

4 publications

Single-layer MoS2_22​ on Au(111): band gap renormalization and substrate interaction

Growth and electronic structure of epitaxial single-layer WS2_22​ on Au(111)

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2_22​

Synthesis of Epitaxial Single-Layer MoS2_22​ on Au(111)

See the researcher in context

Building this map preview

Single-layer MoS $_2$ on Au(111): band gap renormalization and substrate interaction

Growth and electronic structure of epitaxial single-layer WS $_2$ on Au(111)

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS $_2$

Synthesis of Epitaxial Single-Layer MoS $_2$ on Au(111)