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Researcher profile

Siddharth Rao

Siddharth Rao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciEmerging Technologiesphysics.app-ph

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Published work

2 published item(s)

preprint2020arXiv

Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements

We show experimentally through time-resolved conductance measurements that magnetization reversal through domain wall motion in sub-100 nm diameter magnetic tunnel junctions is dominated by two distinct stochastic effects. The first involves the incubation time related to domain wall nucleation, while the second results from stochastic motion in the Walker regime. Micromagnetics simulations reveal several contributions to temporal pinning of the wall near the disk center, including Bloch point nucleation and wall precession. We show that a reproducible ballistic motion is recovered when Bloch and Néel wall profiles become degenerate in energy in optimally sized disks, which enables quasi-deterministic motion.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Survey on STT-MRAM Testing: Failure Mechanisms, Fault Models, and Tests

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero standby leakage, and nearly unlimited endurance. However, a high-quality test solution is required prior to the commercialization of STT-MRAM. In this paper, we present all STT-MRAM failure mechanisms: manufacturing defects, extreme process variations, magnetic coupling, STT-switching stochasticity, and thermal fluctuation. The resultant fault models including permanent faults and transient faults are classified and discussed. Moreover, the limited test algorithms and design-for-testability (DfT) designs proposed in the literature are also covered. It is clear that test solutions for STT-MRAMs are far from well established yet, especially when considering a defective part per billion (DPPB) level requirement. We present the main challenges on the STT-MRAM testing topic at three levels: failure mechanisms, fault modeling, and test/DfT designs.

0 citations0 reviewsNo code linkedOpen access