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Siddharth Kumar

Siddharth Kumar contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2025arXiv

Protonic Nickelate Device Networks for Spatiotemporal Neuromorphic Computing

Computation in biological neural circuits arises from the interplay of nonlinear temporal responses and spatially distributed dynamic network interactions. Replicating this richness in hardware has remained challenging, as most neuromorphic devices emulate only isolated neuron- or synapse-like functions. In this work, we introduce an integrated neuromorphic computing platform in which both nonlinear spatiotemporal processing and programmable memory are realized within a single perovskite nickelate material system. By engineering symmetric and asymmetric hydrogenated NdNiO3 junction devices on the same wafer, we combine ultrafast, proton-mediated transient dynamics with stable multilevel resistance states. Networks of symmetric NdNiO3 junctions exhibit emergent spatial interactions mediated by proton redistribution, while each node simultaneously provides short-term temporal memory, enabling nanoseconds scale operation with an energy cost of 0.2 nJ per input. When interfaced with asymmetric output units serving as reconfigurable long-term weights, these networks allow both feature transformation and linear classification in the same material system. Leveraging these emergent interactions, the platform enables real-time pattern recognition and achieves high accuracy in spoken-digit classification and early seizure detection, outperforming temporal-only or uncoupled architectures. These results position protonic nickelates as a compact, energy-efficient, CMOS-compatible platform that integrates processing and memory for scalable intelligent hardware.

preprint2022arXiv

Electronic and magnetic properties of epitaxial thin film of Nd\tsubscript{0.5}Ba\tsuscriptb{0.5}MnO\tsubscript{3}

Contradictory reports about the electronic and magnetic behavior of bulk Nd0:5Ba0:5MnO3 with uniform disorder exist in the literature. In this work, we investigate the thin films of Nd0:5Ba0:5MnO3, grown by pulsed laser deposition. The success of epitaxial growth in a layer-by-layer mode and high quality of the films have been confirmed by in-situ reflection high energy electron diffraction, atomic force microscopy, X-ray reflectivity, and, X-ray diffraction. These films are found to be insulting and exhibit spin-glass behavior at low temperatures. The study offers an opportunity to tune the competition between charge/orbital ordering and ferromagnetism in half-doped manganites through heterostructure engineering.

preprint2022arXiv

Hole doping in a negative charge transfer insulator

$RE$NiO$_3$ is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole doping affects the BD transition, we have investigated the electronic structure of single-crystalline thin films of Nd$_{1-x}$Ca$_x$NiO$_3$ by synchrotron based experiments and {\it ab-initio} calculations. For a small value of $x$, we find that the doped holes are localized on one or more Ni sites around the dopant Ca$^{2+}$ ions, while the BD state for the rest of the lattice remains intact. The effective charge transfer energy ($Δ$) increases with Ca concentration and the formation of BD phase is not favored above a critical $x$, suppressing the insulating phase. Our present study firmly demonstrates that the appearance of BD mode is essential for the MIT and settles a long-standing debate about the role of structural distortions for the MIT of the $RE$NiO$_3$ series.

preprint2020arXiv

Oxygen Vacancy-Induced Topological Hall effect in a Nonmagnetic Band Insulator

The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for future ultra-dense low-power memory applications. In this work, we report oxygen vacancy (OV) induced THE and anomalous Hall effect (AHE) in a 5$d^0$ system KTaO$_3$. The observation of weak antilocalization behavior and THE in the same temperature range strongly implies the crucial role of spin-orbit coupling (SOC) behind the origin of THE. Ab initio calculations reveal the formation of the magnetic moment on Ta atoms around the OV and Rashba-type spin texturing of conduction electrons. In the presence of Rashba SOC, the local moments around vacancy can form bound magnetic polarons (BMP) with noncollinear spin texture, resulting THE. Scaling analysis between transverse and longitudinal resistance establishes skew scattering driven AHE in present case. Our study opens a route to realize topological phenomena through defect engineering.

preprint2020arXiv

Revisiting the role of intermittent heat transport towards Reynolds stress anisotropy in convective turbulence

Thermal plumes are the energy containing eddy motions that carry heat and momentum in a convective boundary layer. The detailed understanding of their structure is of fundamental interest for a range of applications, from wall-bounded engineering flows to quantifying surface-atmosphere flux exchanges. We address the aspect of Reynolds stress anisotropy associated with the intermittent nature of heat transport in thermal plumes by performing an invariant analysis of the Reynolds stress tensor in an unstable atmospheric surface layer flow, using a field-experimental dataset. Given the intermittent and asymmetric nature of the turbulent heat flux, we formulate this problem in an event-based framework. In this approach, we provide structural descriptions of warm-updraft and cold-downdraft events and investigate the degree of isotropy of the Reynolds stress tensor within these events of different sizes. We discover that only a subset of these events are associated with the least anisotropic turbulence in highly-convective conditions. Additionally, intermittent large heat flux events are found to contribute substantially to turbulence anisotropy under unstable stratification. Moreover, we find that the sizes related to the maximum value of the degree of isotropy do not correspond to the peak positions of the heat flux distributions. This is because, the vertical velocity fluctuations pertaining to the sizes associated with the maximum heat flux, transport significant amount of streamwise momentum. A preliminary investigation shows that the sizes of the least anisotropic events probably scale with a mixed-length scale ($z^{0.5}λ^{0.5}$, where $z$ is the measurement height and $λ$ is the large-eddy length scale).

preprint2019arXiv

Epitaxial stabilization of ultra thin films of high entropy perovskite

High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$)NiO$_3$] thin films on NdGaO$_3$ substrates by pulsed laser deposition. The combined characterizations with in-situ reflection high energy electron diffraction, atomic force microscopy, and X-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive X-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO$_3$. Since both of these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of $A$-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.