Source author record

Shy-Jay Lin

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

Catalog footprint

Research overview

2works

3topics

4close collaborators

Actions

Is this your work?

Open graph Browse papers

preprint2022arXiv

Toward 100% Spin-Orbit Torque Efficiency with High Spin-Orbital Hall Conductivity Pt-Cr Alloys

5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the damping-like SOT efficiencies ( $ξ_{DL}$ ) of Pt and Pt alloys have still been limited to $ξ_{DL}$ <0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, a high spin-orbital Hall conductivity ( $σ_{SH}{\sim}6.5{\times}10^{5}({\hbar}/2e)Ω^{-1}{\cdot} m^{-1}$ ) can be developed. Especially for the Cr-doped case, an extremely high $ξ_{DL}{\sim}0.9$ in a Pt $_{0.69}$ Cr $_{0.31}$ /Co device can be achieved with a moderate Pt $_{0.69}$ Cr $_{0.31}$ resistivity of $ρ_{xx}{\sim}133 μΩ{\cdot}cm$ . A low critical SOT-driven switching current density of $J_{c}{\sim}3.2{\times}10^{6} A{\cdot}cm^{-2}$ is also demonstrated. The damping constant ( $α$ ) of Pt $_{0.69}$ Cr $_{0.31}$ /FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high $σ_{SH}$ , giant $ξ_{DL}$ , moderate $ρ_{xx}$ , and reduced $α$ of such a Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.

preprint2020arXiv

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to achieve sub-ns, and ~fJ write operation when integrated with CMOS access transistors. In this paper, a 2T-1MTJ cell-level modeling framework for in-plane type Y SOT-MRAM suggests that high spin Hall conductivity and moderate SOT material sheet resistance are preferred. We benchmark write energy and speed performances of type Y SOT cells based on various SOT materials experimentally reported in the literature, including heavy metals, topological insulators and semimetals. We then carry out detailed benchmarking of SOT material Pt, beta-W, and BixSe(1-x) with different thickness and resistivity. We further discuss how our 2T-1MTJ model can be expanded to analyze other variations of SOT-MRAM, including perpendicular (type Z) and type X SOT-MRAM, two-terminal SOT-MRAM, as well as spin-transfer-torque (STT) and voltage-controlled magnetic anisotropy (VCMA)-assisted SOT-MRAM. This work will provide essential guidelines for SOT-MRAM materials, devices, and circuits research in the future.

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.