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Shunichi Ohmura

Shunichi Ohmura appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2016arXiv

X-ray Performance of Back-Side Illuminated Type of Kyoto's X-ray Astronomical SOI Pixel Sensor, XRPIX

We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future X-ray astronomy satellites that enable us to observe in the wide energy band of 0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8 μm in the front side of the sensor, it is impossible to detect low energy X-rays with a front-illuminated type. So, we have been developing back-illuminated type of XRPIX with a less 1 μm dead layer in the back-side, which enables the sensitivity to reach 0.5 keV. We produced two types of back-side illuminated (BI) XRPIXs, one of which is produced in "Pizza process" which LBNL developed and the other is processed in the ion implantation and laser annealing. We irradiated both of the BI-XRPIXs with soft X-ray and investigate soft X-ray performance of them. We report results from soft X-ray evaluation test of the device.

preprint2015arXiv

Investigation of the Kyoto's X-ray Astronomical SOIPIXs with Double-SOI Wafer for Reduction of Cross-talks

We have been developing X-ray SOIPIXs, "XRPIX", for future X-ray astronomy satellites. XRPIX is equipped with a function of "event-driven readout", which allows us to readout signal hit pixels only and realizes a high time resolution ($\sim10μ{\rm s}$). The current version of XRPIX suffers a problem that the readout noise in the event-driven readout mode is higher than that in the the frame readout mode, in which all the pixels are read out serially. Previous studies have clarified that the problem is caused by the cross-talks between buried P-wells (BPW) in the sensor layer and in-pixel circuits in the circuit layer. Thus, we developed new XRPIX having a Double SOI wafer (DSOI), which has an additional silicon layer (middle silicon) working as an electrical shield between the BPW and the in-pixel circuits. After adjusting the voltage applied to the middle silicon, we confirmed the reduction of the cross-talk by observing the analog waveform of the pixel circuit. We also successfully detected $^{241}$Am X-rays with XRPIX.