Source author record

Shuaihua Nie

Shuaihua Nie appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci

Catalog footprint

What is connected

3works

1topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2013arXiv

Recent progress in perpendicularly magnetized Mn-based binary alloy films

In this article, we review the recent progress in growth, structural characterization, magnetic properties and related spintronic devices of tetragonal MnxGa and MnxAl thin films with perpendicular magnetic anisotropy. In the first part of this review, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording and permanent magnets applications, and the most promising candidates of tetragonal MnxGa and MnxAl with strong perpendicular anisotropy. Then, in the second and third parts, we focus on the recent progress of perpendicularly magnetized MnxGa and MnxAl, respectively, including their lattice structures, bulk synthesis, epitaxial growth, structural chracterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves and spin injector into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.

preprint2013arXiv

Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications

MnxGa films with high perpendicular anisotropy, coercivity and energy product have great application potential in ultrahigh-density perpendicular recording, permanent magnets, spin-transfer-torque memory and oscillators, magneto-resistance sensors and ferromagnetic metal/semiconductor heterostructure devices. Here we present a comprehensive diagram of effective magnetism-tailoring of perpendicularly magnetized MnxGa films grown on III-V semiconductor GaAs by using molecular-beam epitaxy for the first time, by systematically investigating the wide-range composition and detailed post-growth annealing effects. We show that the (001)-orientated MnxGa films with L10 or D022 ordering could be crystallized on GaAs in a very wide composition range from x=0.76 to 2.6. L10-ordered MnxGa films show robust magnetization, high remanent ratio, giant perpendicular anisotropy, high intrinsic and extrinsic coercivity, and large energy product, which make this kind of material favorable for perpendicular magnetic recording, high-performance spintronic devices and permanent magnet applications. In contrast, D022-ordered films exhibit lower perpendicular anisotropy and weaker magnetism. Post-growth annealing MnxGa films studies reveal high thermal-stability up to 450 oC, and effective tailoring of magnetic properties can be realized by prolonging annealing at 450 oC. These results would be helpful for understanding this kind of material and designing new spintronic devices for specific practical applications.

preprint2012arXiv

Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product

We present the fascinating magnetic properties in homogenous noble-metal-free and rare-earth-free L10-Mn1.5Ga epitaxial films on GaAs (001), including ultrahigh perpendicular coercivity remarkably tunable from 8.1 to 42.8 kOe, giant perpendicular magnetocrystalline anisotropy with a maximum of 22.9 Merg/cc, easily controllable magnetization from 27.3 to 270.5 emu/cc, excellent squareness exceeding 0.94 and large magnetic energy product up to 2.6 MGOe. These magnificent room-temperature magnetic characteristics make our L10-Mn1.5Ga films multifunctional as outstanding and cost-effective alternative for not only perpendicular magnetic recording bits with areal density over 30 Tb inch-2 and thermal stability over 60 years, but variety of novel devices with high magnetic-noise immunity and thermal stability like spin-torque MRAMs and oscillators pillars below 5 nm in dimension, and giant magnetoresistance sensors able to measure high fileds up to 42 kOe . Moreover, this kind of materials can also be expected as permanent magnets for replacing the expensive rare-earth magnets widely used today.