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Shiwu Gao

Shiwu Gao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2022arXiv

Characterization and manipulation of intervalley scattering induced by an individual monovacancy in graphene

Intervalley scattering involves microscopic processes that electrons are scattered by atomic-scale defects on nanometer length scales. Although central to our understanding of electronic properties of materials, direct characterization and manipulation of range and strength of the intervalley scattering induced by an individual atomic defect have so far been elusive. Using scanning tunneling microscope, we visualized and controlled intervalley scattering from an individual monovacancy in graphene. By directly imaging the affected range of intervalley scattering of the monovacancy, we demonstrated that it is inversely proportional to the energy, i.e., it is proportional to the wavelength of massless Dirac Fermions. A giant electron-hole asymmetry of the intervalley scattering is observed because that the monovacancy is charged. By further charging the monovacancy, the bended electronic potential around the monovacancy softened the scattering potential, which, consequently, suppressed the intervalley scattering of the monovacancy.

preprint2020arXiv

Integrated Plasmonics: Broadband Dirac Plasmons in Borophene

The past decade has witnessed numerous discoveries of two-dimensional (2D) semimetals and insulators, whereas 2D metals are rarely identified. Borophene, a monolayer boron sheet, has recently emerged as a perfect 2D metal with unique structure and electronic properties. Here we study collective excitations in borophene, which exhibit two major plasmon modes with low damping rates extending from infrared to ultraviolet regime. The anisotropic 1D plasmon originates from electronic excitations of tilted Dirac cones in borophene, analogous to that in heavily doped Dirac semimetals. These features make borophene promising to realize directional polariton transportation and broadband optical communications for next-generation optoelectronic devices.

preprint2015arXiv

Schottky barrier formation and band bending revealed by first principles calculations

An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania in contact with gold (Au/Nb:TiO$_2$). The local Schottky barrier height is found to vary between 0 and 1.26 eV depending on the position of the dopant. The band bending is caused by a dopant induced dipole field between the interface and the dopant site, whereas the pristine Au/TiO$_2$ interface does not show any band bending. These findings open the possibility for atomic scale optimization of the Schottky barrier and light harvesting in metal-semiconductor nanostructures.