Researcher profile

Cai Cheng

Cai Cheng contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Integrated Plasmonics: Broadband Dirac Plasmons in Borophene

The past decade has witnessed numerous discoveries of two-dimensional (2D) semimetals and insulators, whereas 2D metals are rarely identified. Borophene, a monolayer boron sheet, has recently emerged as a perfect 2D metal with unique structure and electronic properties. Here we study collective excitations in borophene, which exhibit two major plasmon modes with low damping rates extending from infrared to ultraviolet regime. The anisotropic 1D plasmon originates from electronic excitations of tilted Dirac cones in borophene, analogous to that in heavily doped Dirac semimetals. These features make borophene promising to realize directional polariton transportation and broadband optical communications for next-generation optoelectronic devices.

preprint2017arXiv

Universal Scaling in Intrinsic Resistivity of Two-Dimensional Metal Borophene

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties such as the emergence of superconductivity and Dirac Fermions. However, quantitative understanding of intrinsic electrical transport of borophene has not been achieved. Here, we report a comprehensive first-principles study on electron-phonon driven intrinsic electrical resistivity (\r{ho}) of emerging borophene structures. We find that the resistivity is highly dependent on the atomic structures and electron density of borophene. Low-temperature resistivity of borophene \r{ho} exhibits a universal scaling behavior, which increases rapidly with temperature T (\r{ho}~T^4), while \r{ho} increases linearly for a large temperature window T > 100 K. It is observed that this universal behavior of intrinsic resistivity is well described by Bloch-Grünesisen model. Different from graphene and conventional three-dimensional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities while the Bloch-Grünesisen temperature is nearly fixed at ~100 K. Our work suggests monolayer boron can serve as an intriguing platform for realizing high-tunable two-dimensional electronic devices.