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Anders Hellman

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3 published item(s)

preprint2026arXiv

Material exploration through active learning -- METAL

The discovery and design of new materials are paramount in the development of green technologies. High entropy oxides represent one such group that has only been tentatively explored, mainly due to the inherent problem of navigating vast compositional spaces. Thanks to the emergence of machine learning, however, suitable tools are now readily available. Here, the task of finding oxygen carriers for chemical looping processes has been tackled by leveraging active learning-based strategies combined with first-principles calculations. High efficiency and efficacy have, moreover, been achieved by exploiting the power of recently developed machine learning interatomic potentials. Firstly, the proposed approaches were validated based on an established computational framework for identifying high entropy perovskites that can be used in chemical looping air separation and dry reforming. Chief among the insights thus gained was the identification of the best performing strategies, in the form of greedy or Thompson-based sampling based on uncertainty estimates obtained from Gaussian processes. Building on this newfound knowledge, the concept was applied to a more complex problem, namely the discovery of high entropy oxygen carriers for chemical looping oxygen uncoupling. This resulted in both qualitative as well as quantitative outcomes, including lists of specific materials with high oxygen transfer capacities and configurational entropies. Specifically, the best candidates were based on the known oxygen carrier CaMnO3 but also contained a variety of additional species, of which some, e.g., Ti; Co; Cu; and Ti, were expected while others were not, e.g., Y and Sm. The results suggest that adopting active learning approaches is critical in materials discovery, given that these methods are already shifting research practice and soon will be the norm.

preprint2015arXiv

Schottky barrier formation and band bending revealed by first principles calculations

An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania in contact with gold (Au/Nb:TiO$_2$). The local Schottky barrier height is found to vary between 0 and 1.26 eV depending on the position of the dopant. The band bending is caused by a dopant induced dipole field between the interface and the dopant site, whereas the pristine Au/TiO$_2$ interface does not show any band bending. These findings open the possibility for atomic scale optimization of the Schottky barrier and light harvesting in metal-semiconductor nanostructures.

preprint2009arXiv

From electronic structure to catalytic activity: A single descriptor for adsorption and reactivity on transition-metal carbides

Adsorption and catalytic properties of the polar (111) surface of transition-metal carbides (TMC's) are investigated by density-functional theory. Atomic and molecular adsorption are rationalized with the concerted-coupling model, in which two types of TMC surface resonances (SR's) play key roles. The transition-metal derived SR is found to be a single measurable descriptor for the adsorption processes, implying that the Brønsted-Evans-Polanyi relation and scaling relations apply. This gives a picture with implications for ligand and vacancy effects and which has a potential for a broad screening procedure for heterogeneous catalysts.