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Shintaro Adachi

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Published work

15 published item(s)

preprint2020arXiv

Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity (HTS).

preprint2020arXiv

Effect of Dy substitution in the giant magnetocaloric properties of HoB$_{2}$

Recently, a massive magnetocaloric effect near the liquefaction temperature of hydrogen has been reported in the ferromagnetic material HoB$_{2}$. Here we investigate the effects of Dy substitution in the magnetocaloric properties of Ho$_{1-x}$Dy$_{x}$B$_{2}$ alloys ($\textit{x}$ = 0, 0.3, 0.5, 0.7, 1.0). We find that the Curie temperature ($\textit{T}$$_{C}$) gradually increases upon Dy substitution, while the magnitude of the magnetic entropy change |$Δ\textit{S}_{M}$| at $\textit{T}$ = $\textit{T}_{C}$ decreases from 0.35 to 0.15 J cm$^{-3}$ K$^{-1}$ for a field change of 5 T. Due to the presence of two magnetic transitions in these alloys, despite the change in the peak magnitude of |$Δ\textit{S}_{M}$|, the refrigerant capacity ($\textit{RC}$) and refrigerant cooling power ($\textit{RCP}$) remains almost constant in all doping range, which as large as 5.5 J cm$^{-3}$ and 7.0 J cm$^{-3}$ for a field change of 5 T. These results imply that this series of alloys could be an exciting candidate for magnetic refrigeration in the temperature range between 10-50 K.

preprint2020arXiv

Electronic phase diagram of Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ revealed by magnetotransport measurements

Among the Fe-based superconductors, Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ is unique in that its crystal structure is the simplest and the electron correlation level is the strongest, and thus it is important to investigate the doping($x$)-temperature ($T$) phase diagram of this system. However, inevitably incorporated excess Fe currently prevents the establishment of the true phase diagram. We overcome the aforementioned significant problem via developing a new annealing method termed as "Te-annealing" wherein single crystals are annealed under Te vapor. Specifically, we conducted various magnetotransport measurements on Te-annealed superconducting Fe$_{1+y}$Te$_{1-x}$Se$_{x}$. We observed that crossover from the incoherent to the coherent electronic state and opening of the pseudogap occurs at high temperatures ($\approx$ 150 K for $x$ = 0.2). This is accompanied by a more substantial pseudogap and the emergence of a phase with a multi-band nature at lower temperatures (below $\approx$ 50 K for $x$ = 0.2) before superconductivity sets in. Based on the results, the third type electronic phase diagram in Fe-based high-$T_c$ superconductors is revealed.

preprint2020arXiv

Machine Learning Guided Discovery of Gigantic Magnetocaloric Effect in HoB$_{2}$ Near Hydrogen Liquefaction Temperature

Magnetic refrigeration exploits the magnetocaloric effect which is the entropy change upon application and removal of magnetic fields in materials, providing an alternate path for refrigeration other than the conventional gas cycles. While intensive research has uncovered a vast number of magnetic materials which exhibits large magnetocaloric effect, these properties for a large number of compounds still remain unknown. To explore new functional materials in this unknown space, machine learning is used as a guide for selecting materials which could exhibit large magnetocaloric effect. By this approach, HoB$_{2}$ is singled out, synthesized and its magnetocaloric properties are evaluated, leading to the experimental discovery of gigantic magnetic entropy change 40.1 J kg$^{-1}$ K$^{-1}$ (0.35 J cm$^{-3}$ K$^{-1}$) for a field change of 5 T in the vicinity of a ferromagnetic second-order phase transition with a Curie temperature of 15 K. This is the highest value reported so far, to our knowledge, near the hydrogen liquefaction temperature thus it is a highly suitable material for hydrogen liquefaction and low temperature magnetic cooling applications.

preprint2020arXiv

Observation of small Fermi pockets protected by clean CuO2 sheets of a high-Tc superconductor

The superconductivity of high transition temperature (Tc) occurs in copper oxides with carrier-doping to an antiferromagnetic (AF) Mott insulator. This discovery more than thirty years ago immediately led to a prediction about the formation of a small Fermi pocket. This structure, however, has not yet been detected, while it could be a key element in relating high-Tc superconductivity to Mott physics. To address this long-standing issue, we investigate the electronic structure of a five-layered Ba2Ca4Cu5O10(F,O)2 with inner CuO2 planes demonstrated to be cleanest ever in cuprates. Most surprisingly, we find small Fermi surface (FS) pockets closed around (pi/2,pi/2) consistently by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillation measurements. The d-wave superconducting gap opens along the pocket, revealing the coexistence between the superconductivity and AF order in the same CuO2 sheet. Our data further indicate that the superconductivity can occur without contribution from the states near the antinodal region, which are shared by other competing excitations such as the charge density wave (CDW) and pseudogap states. This will have significant implications for understanding the superconductivity and puzzling Fermi arc phenomena in cuprates.

preprint2020arXiv

THz emission from a Bi2Sr2CaCu2O8+δ cross-whisker junction

Cuprate superconductor Bi2Sr2CaCu2O8+δ (BSCCO) has been a promising candidate of a coherent, continuous, and compact THz light source owing to its intrinsic Josephson junction inside the crystal structure. In this paper, we utilized BSCCO cross-whisker junctions to produce THz emitter device using the whisker crystals which can be easily obtained compared with single crystals. As a result, we have successfully observed the emission from the cross-whisker intrinsic Josephson junction, with frequency of ~0.7 THz. Our findings might enlarge the applicability of BSCCO superconductors for the THz emission source.

preprint2019arXiv

Crystal Size Improvement of Bi-based Superconducting Whiskers under Stress-controlled Condition

Using stress-controlled amorphous precursors, we have successfully grown large $Bi_{2}$$Sr_{2}$$Ca_{\textit{n}-1}$$Cu_{\textit{n}}$$O_{\textit{y}}$ (Bi-based) high-transition temperature superconducting whiskers. Especially, under a high compressive stress attained by 1 GPa pelletizing, the crystal size of a whisker was significantly enhanced up to 9.5 mm length (growth period: 96 h) which is 2.4 times larger than that of the conventional amorphous-precursors method. In addition, by using the stress-controlled precursors, the number of the obtained Bi-based whiskers were also increased by a factor of 1.8.

preprint2019arXiv

Data-driven Exploration of Pressure-Induced Superconductivity in AgIn$_{5}$Se$_{8}$

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by a high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on AgIn$_{5}$Se$_{8}$ which has high density of state near the Fermi level. AgIn$_{5}$Se$_{8}$ was successfully synthesized as single crystals using a melt and slow cooling method. The single-crystal X-ray diffraction analysis revealed the obtained crystal is high quality without deficiencies. The valence states in AgIn$_{5}$Se$_{8}$ were determined to be Ag1+, In3+ and Se2- in accordance with a formal charge by the core level X-ray photoelectron spectroscopy analysis. The electrical resistance was evaluated under high pressure using a diamond anvil cell with boron-doped diamond electrodes. Although the sample was insulator with a resistance of above 40 MΩ at ambient pressure, the resistance markedly decreased with increase of the pressure, and a pressure-induced superconducting transition was discovered at 3.4 K under 52.5 GPa. The transition temperature increased up to 3.7 K under further pressure of 74.0 GPa.

preprint2019arXiv

Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam

A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern exhibited a signature of higher onset temperature above 10 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for superconducting device.

preprint2019arXiv

Pressure-induced superconductivity in SnSb2Te4

We report the discovery of a new superconductor from phase change materials SnSb2Te4. Single crystals of SnSb2Te4 were grown using a conventional melting-growth method. The sample resistance under pressure was measured using an originally designed diamond anvil cell with boron-doped diamond electrodes. The pressure dependence of the resistance has been measured up to 32.6 GPa. The superconducting transition of SnSb2Te4 appeared at 2.1 K(Tconset) under 8.1 GPa, which was further increased with applied pressure to a maximum onset transition temperature 7.4K under 32.6 GPa.

preprint2016arXiv

Origin of positive out-of-plane magnetoconductivity in overdoped Bi$_{1.6}$Pb$_{0.4}$Sr$_{2}$CaCu$_{1.96}$Fe$_{0.04}$O$_{8+δ}$

To elucidate the pseudogap phase diagram including the overdoped state of high transition temperature (high-$T_c$) cuprates, we must understand the origin of the positive out-of-plane magnetoconductivity (MC) observed in these compounds. For this purpose, the out-of-plane resistivity $ρ_c(T,H)$ of an overdoped Bi$_{1.6}$Pb$_{0.4}$Sr$_{2}$CaCu$_{1.96}$Fe$_{0.04}$O$_{8+δ}$ (Bi-2212) single crystal is measured under pulsed magnetic fields up to 60 T. We show that the superconductive density-of-states (DOS) depletion effect, in addition to the pseudogap effect, clearly appears below the superconductive fluctuation regime, and the contribution becomes dominant in the superconducting state.

preprint2015arXiv

Density-of-states fluctuation-induced negative out-of-plane magnetoresistance in overdoped Bi-2212

We analyzed the in-plane and out-of-plane magnetoresistance (MR) for overdoped Bi$_{1.6}$Pb$_{0.4}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ (Bi-2212) single crystals using superconductive fluctuation theory, which considers the density-of-states (DOS) contribution in layered superconductors with the conventional s-wave pairing state. The out-of-plane results are well reproduced by the theory, implying that the large, negative out-of-plane MR as well as the sharp increase in the zero-field out-of-plane resistivity $ρ_{c}$ near the superconducting transition temperature $T_c$ originate from the superconductive DOS fluctuation effect. On the other hand, the in-plane results are better reproduced without the DOS contribution (i.e., using only the Aslamazov-Larkin (AL) contribution), which may be explained in terms of the d-wave superconductivity of the layered superconductors.

preprint2014arXiv

Doping Dependencies of Onset Temperatures for the Pseudogap and Superconductive Fluctuation in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$, Studied from both In-Plane and Out-of-Plane Magnetoresistance Measurements

To investigate the relationship between the pseudogap and superconductivity, we measured both the in-plane ($ρ_{ab}$) and out-of-plane ($ρ_c$) resistivity for oxygen-controlled Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ single crystals subject to magnetic fields (parallel to the $c$ axis) of up to 17.5 T. The onset temperature for the superconductive fluctuation, $T_{scf}$, is determined by the large positive in-plane magnetoresistance (MR) and negative out-of-plane MR observed near $T_c$, whereas the pseudogap opening temperature $T^*$ is determined by the semiconductive upturn of the zero-field $ρ_c$. $T_{scf}$ was found to scale roughly as $T_c$, with a decreasing temperature interval between them upon doping. On the other hand, $T^*$ starts out much higher than $T_{scf}$ but decreases monotonically upon doping; finally, at a heavily overdoped state, it is not observed above $T_{scf}$. These results imply that the pseudogap is not a simple precursor of superconductivity, but that further study is needed to determine whether or not $T^*$ exists below $T_{scf}$ in the heavily overdoped state.

preprint2014arXiv

Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime

To investigate the origin of the enhanced $T_c$ ($\approx$ 110 K) of the trilayer cuprate superconductor Bi$_{2}$Sr$_{2}$Ca$_{2}$Cu$_{3}$O$_{10+δ}$ (Bi-2223), we have performed systematic magnetoresistance (MR) measurements on this superconductor, as well as on the bilayer superconductor, Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ (Bi-2212). The in-plane coherence length, $ξ_{ab}$, and the specific-heat jump, $ΔC$, have been estimated using the theory of renormalized superconductive fluctuations, and the doping dependence of these parameters has been qualitatively explained using the Fermi arc approach. A detailed comparison of the superconducting parameters with $T_c$ for these compounds suggests that an additional superconducting condensation energy exists, due to an increase in the number of stacking CuO$_{2}$ planes in a unit cell.

preprint2012arXiv

Effects of Annealing under Tellurium Vapor for Fe$_{1.03}$Te$_{0.8}$Se$_{0.2}$ Single Crystals

In this study, the effects of annealing under tellurium vapor have been investigated for Fe$_{1.03}$Te$_{0.8}$Se$_{0.2}$ single crystals. The as-grown crystal is not superconducting. After annealing it at 400 $^\circ$C for 250 h in tellurium (Te) vapor, it shows metallic resistivity temperature dependence below 150 K and a sharp superconducting transition at 13 K. The sample also shows a full magnetic shielding effect at low temperatures. The improvement in superconductivity has been attributed to the removal of excess Fe, which is inevitably incorporated in the as-grown crystals, by the annealing.