Source author record

Shinji Isogami

Shinji Isogami appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall

Catalog footprint

What is connected

2works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2026arXiv

Efficient magnetization switching driven by orbital torque originating from light 3d-transition-metal nitrides

The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy metals. We demonstrate perpendicular magnetization switching in [Co/Pt]3 multilayers driven by the OHE in a light 3d transition metal nitride, VN, with 111-texture of face-center cubic structure. Second harmonic Hall measurement reveals a large torque efficiency of -0.41 in the VN(7.5 nm)/[Co(0.35nm)/Pt(0.3 nm)]3, which significantly surpasses that in the control samples with Co, Py, and CoFeB ferromagnets, suggesting strong conversion of orbital current originating from VN to spin current by [Co/Pt]3 ferromagnet. Full switching by in-plane current is achieved with an in-plane magnetic field, while partial field-free switching occurs without it. The critical current density for the switching is found to be comparable to that of the W-based spin-orbit torque device. First-principles calculations confirm a large orbital Hall conductivity in VN, with a small spin Hall conductivity around the Fermi energy. Our results highlight the potential in the combination of light 3d transition metal nitrides and Co/Pt ferromagnetic multilayer with 111-texture to maximize the magnetization switching efficiency of orbitronic devices.

preprint2020arXiv

Contributions of magnetic structure and nitrogen to perpendicular magnetocrystalline anisotropy in antiperovskite $ε$-Mn$_4$N

To study how nitrogen contributes to perpendicular magnetocrystalline anisotropy (PMA) in the ferrimagnetic antiperovskite Mn$_4$N, we examined both the fabrication of epitaxial Mn$_4$N films with various nitrogen contents and first-principles density-functional calculations. Saturation magnetization ($M_{\rm s}$) peaks of 110 mT and uniaxial PMA energy densities ($K_{\rm u}$) of 0.1 MJ/m$^3$ were obtained for a N$_2$ gas flow ratio ($Q$) of $\sim 10 \%$ during sputtering deposition, suggesting nearly single-phase crystalline $ε$-Mn$_4$N. Segregation of $α$-Mn and nitrogen-deficient Mn$_4$N grains was observed for $Q \approx 6\%$, which was responsible for a decrease in the $M_{\rm s}$ and $K_{\rm u}$. The first-principles calculations revealed that the magnetic structure of Mn$_4$N showing PMA was "type-B" having a collinear structure, whose magnetic moments couple parallel within the c-plane and alternating along the c-direction. In addition, the $K_{\rm u}$ calculated using Mn$_{32}$N$_x$ supercells showed a strong dependence on nitrogen deficiency, in qualitative agreement with the experimental results. The second-order perturbation analysis of $K_{\rm u}$ with respect to the spin-orbit interaction revealed that not only spin-conserving but also spin-flip processes contribute significantly to the PMA in Mn$_4$N. We also found that both contributions decreased with increasing nitrogen deficiency, resulting in the reduction of $K_{\rm u}$. It was noted that the decrease in the spin-flip contribution occurred at the Mn atoms in face-centered sites. This is one of the specific PMA characteristics we found for antiperovskite-type Mn$_4$N.