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Researcher profile

Gaurav K. Shukla

Gaurav K. Shukla contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2026arXiv

Efficient magnetization switching driven by orbital torque originating from light 3d-transition-metal nitrides

The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy metals. We demonstrate perpendicular magnetization switching in [Co/Pt]3 multilayers driven by the OHE in a light 3d transition metal nitride, VN, with 111-texture of face-center cubic structure. Second harmonic Hall measurement reveals a large torque efficiency of -0.41 in the VN(7.5 nm)/[Co(0.35nm)/Pt(0.3 nm)]3, which significantly surpasses that in the control samples with Co, Py, and CoFeB ferromagnets, suggesting strong conversion of orbital current originating from VN to spin current by [Co/Pt]3 ferromagnet. Full switching by in-plane current is achieved with an in-plane magnetic field, while partial field-free switching occurs without it. The critical current density for the switching is found to be comparable to that of the W-based spin-orbit torque device. First-principles calculations confirm a large orbital Hall conductivity in VN, with a small spin Hall conductivity around the Fermi energy. Our results highlight the potential in the combination of light 3d transition metal nitrides and Co/Pt ferromagnetic multilayer with 111-texture to maximize the magnetization switching efficiency of orbitronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Anti-site disorder and Berry curvature driven anomalous Hall effect in spin gapless semiconducting Mn2CoAl Heusler compound

Spin gapless semiconductors exhibit a finite band gap for one spin channel and closed gap for other spin channel, emerged as a new state of magnetic materials with a great potential for spintronic applications. The first experimental evidence for the spin gapless semiconducting behavior was observed in an inverse Heusler compound Mn2CoAl. Here, we report a detailed investigation of the crystal structure and anomalous Hall effect in the Mn2CoAl using experimental and theoretical studies. The analysis of the high-resolution synchrotron x-ray diffraction data shows anti-site disorder between Mn and Al atoms within the inverse Heusler structure. The temperature-dependent resistivity shows semiconducting behavior and follows Mooijs criteria for disordered metal. Scaling behavior of the anomalous Hall resistivity suggests that the anomalous Hall effect in the Mn2CoAl is primarily governed by intrinsic mechanism due to the Berry curvature in momentum space. The experimental intrinsic anomalous Hall conductivity (AHC) is found to be 35 S/cm, which is considerably larger than the theoretically predicted value for ordered Mn2CoAl. Our first-principle calculations conclude that the anti-site disorder between Mn and Al atoms enhances the Berry curvature and hence the value of intrinsic AHC, which is in a very well agreement with the experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Atomic disorder and Berry phase driven anomalous Hall effect in Co2FeAl Heusler compound

Co2-based Heusler compounds are the promising materials for the spintronics application due to their high Curie temperature, large spin-polarization, large magnetization density, and exotic transport properties. In the present manuscript, we report the anomalous Hall effect (AHE) in a polycrystalline Co2FeAl Heusler compound using combined experimental and theoretical studies. The Rietveld analysis of high-resolution synchrotron x-ray diffraction data reveals a large degree (~50 %) of antisite disorder between Fe and Al atoms. The analysis of anomalous transport data provides the experimental anomalous Hall conductivity (AHC) about 227 S/cm at 2 K with an intrinsic contribution of 155 S/cm, which has nearly constant variation with temperature. The detailed scaling analysis of anomalous Hall resistivity suggests that the AHE in Co2FeAl is governed by the Berry phase driven intrinsic mechanism. Our theoretical calculations reveal that the disorder present in Co2FeAl compound enhances the Berry curvature induced intrinsic AHC.

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preprint2022arXiv

Band splitting induced Berry flux and intrinsic anomalous Hall conductivity in NiCoMnGa quaternary Heusler compound

The anomalous transport properties of Heusler compounds become a hotspot of research in recent years due to their unique band structure and possible application in spintronics. In this paper, we report the anomalous Hall effect in polycrystalline NiCoMnGa quaternary Heusler compound by experimental means and theoretical calculations. The experimental anomalous Hall conductivity (AHC) was found at about 256 S/cm at 10K with an intrinsic contribution of ~ 121 S/cm. The analysis of Hall data reveals the presence of both extrinsic and intrinsic contributions in AHE. Our theoretical calculations show that a pair of spin-orbit coupled band formed by the band splitting due to spin-orbit interaction (SOI) at the Fermi level produces a finite Berry flux in the system that provides the intrinsic AHC about 100 S/cm, which is in good agreement with the experiment.

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preprint2022arXiv

Role of chemical disorder in tuning the Weyl points in vanadium doped Co$_2$TiSn

The lack of time-reversal symmetry and Weyl fermions give exotic transport properties to Co-based Heusler alloys. In the present study, we have investigated the role of chemical disorder on the variation of Weyl points in Co\textsubscript{2}Ti\textsubscript{1-x}V\textsubscript{x}Sn magnetic Weyl semimetal candidate. We employ the first principle approach to track the evolution of the nodal lines responsible for the appearance of Weyl node in Co$_2$TiSn as a function of V substitution in place of Ti. By increasing the V concentration in place of Ti, the nodal line moves toward Fermi level and remains at Fermi level around the middle composition. Further increase of the V content, leads shifting of nodal line away from Fermi level. Density of state calculation shows half-metallic behavior for the entire range of composition. The magnetic moment on each Co atom as a function of V concentration increases linearly up to x=0.4, and after that, it starts decreasing. We also investigated the evolution of the Weyl nodes and Fermi arcs with chemical doping. The first-principles calculations reveal that via replacing almost half of the Ti with V, the intrinsic anomalous Hall conductivity increased twice as compared to the undoped composition. Our results indicate that the composition close to the 50\% V doped Co$_2$TiSn, will be an ideal composition for the experimental investigation of Weyl physics.

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