Source author record

Yoshio Miura

Yoshio Miura appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

13works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

13 published item(s)

preprint2026arXiv

Efficient magnetization switching driven by orbital torque originating from light 3d-transition-metal nitrides

The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy metals. We demonstrate perpendicular magnetization switching in [Co/Pt]3 multilayers driven by the OHE in a light 3d transition metal nitride, VN, with 111-texture of face-center cubic structure. Second harmonic Hall measurement reveals a large torque efficiency of -0.41 in the VN(7.5 nm)/[Co(0.35nm)/Pt(0.3 nm)]3, which significantly surpasses that in the control samples with Co, Py, and CoFeB ferromagnets, suggesting strong conversion of orbital current originating from VN to spin current by [Co/Pt]3 ferromagnet. Full switching by in-plane current is achieved with an in-plane magnetic field, while partial field-free switching occurs without it. The critical current density for the switching is found to be comparable to that of the W-based spin-orbit torque device. First-principles calculations confirm a large orbital Hall conductivity in VN, with a small spin Hall conductivity around the Fermi energy. Our results highlight the potential in the combination of light 3d transition metal nitrides and Co/Pt ferromagnetic multilayer with 111-texture to maximize the magnetization switching efficiency of orbitronic devices.

preprint2021arXiv

Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study

We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculations. The analysis shows that the MTJs with Co-based alloys (CoNi, CoPt, and CoPd) have high TMR ratios over 2000$\%$. These MTJs have energetically favored Co-O interfaces where interfacial antibonding between Co $d$ and O $p$ states is formed around the Fermi level. We find that the resonant tunneling of the antibonding states, called the interface resonant tunneling, is the origin of the obtained high TMR ratios. Our calculation of the magnetocrystalline anisotropy shows that many $L1_1$ alloys have large perpendicular magnetic anisotropy (PMA). In particular, CoPt has the largest value of anisotropy energy $K_{\rm u} \approx 10\,{\rm MJ/m^3}$. We further conduct a perturbation analysis of the PMA with respect to the spin-orbit interaction and reveal that the large PMA in CoPt and CoNi mainly originates from spin-conserving perturbation processes around the Fermi level.

preprint2021arXiv

Lattice dynamics and its effects on magnetocrystalline anisotropy energy of pristine and hole-doped YCo$_5$ from first principles

We study the lattice dynamics effects on the phase stability and magnetocrystalline anisotropy (MCA) energy of CaCu$_5$-type YCo$_5$ at finite temperatures using first-principles calculations based on density functional theory (DFT). Harmonic lattice dynamics (HLD) calculations indicate that YCo$_5$ with 56 full valance electrons is dynamically unstable and this instability can be cured by reducing the number of electrons ($N_e$). Crystal orbital Hamilton population analysis reveals that the observed phonon instability originates from the large population of antibonding states near the Fermi level, which is dominated by the Co atoms in the honeycomb layer. The antibonding state depopulates with decreasing $N_e$, resulting in stable phonons for hole-doped YCo$_5$ with $N_e$ $\leq$ 55. We then evaluate the temperature-dependent MCA energy using both HLD and $ab$ $initio$ molecular dynamics (AIMD) methods. For the pristine YCo$_5$, we observe a very weak temperature decay of the MCA energy, indicating little effect of lattice dynamics. Also, the MCA energies evaluated with AIMD at all target temperatures are larger than that of the static hexagonal lattice at 0 K, which is mainly attributed to the structural distortion driven by soft phonon modes. In the hole-doped YCo$_5$, where the distortion is suppressed, a considerable temperature decay in MCA energy is obtained both in HLD and AIMD methods, showing that lattice dynamics effects on MCA energy are non-negligible.

preprint2021arXiv

Perpendicular magnetic anisotropy at Fe/Au(111) interface studied by Mössbauer, x-ray absorption, and photoemission spectroscopies

The origin of the interfacial perpendicular magnetic anisotropy (PMA) induced in the ultrathin Fe layer on the Au(111) surface was examined using synchrotron-radiation-based Mössbauer spectroscopy (MS), X-ray magnetic circular dichroism (XMCD), and angle-resolved photoemission spectroscopy (ARPES). To probe the detailed interfacial electronic structure of orbital hybridization between the Fe 3$d$ and Au 6$p$ bands, we detected the interfacial proximity effect, which modulates the valence-band electronic structure of Fe, resulting in PMA. MS and XMCD measurements were used to detect the interfacial magnetic structure and anisotropy in orbital magnetic moments, respectively. $In$-$situ$ ARPES also confirms the initial growth of Fe on large spin-orbit coupled surface Shockley states under Au(111) modulated electronic states in the vicinity of the Fermi level. This suggests that PMA in the Fe/Au(111) interface originates from the cooperation effects among the spin, orbital magnetic moments in Fe, and large spin-orbit coupling in Au. These findings pave the way to develop interfacial PMA using $p$-$d$ hybridization with a large spin-orbit interaction.

preprint2020arXiv

Above-room-temperature giant thermal conductivity switching in spintronic multilayer

Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal conductivity depends on the magnetization configuration: this is the magneto-thermal resistance effect. Here we show that an epitaxial Cu/Co$_{50}$Fe$_{50}$ multilayer film exhibits giant magnetic-field-induced modulation of the cross-plane thermal conductivity. The magneto-thermal resistance ratio for the Cu/Co$_{50}$Fe$_{50}$ multilayer reaches 150% at room temperature, which is much larger than the previous record high. Although the ratio decreases with increasing the temperature, the giant magneto-thermal resistance effect of ~100% still appears up to 400 K. The magnetic field dependence of the thermal conductivity of the Cu/Co$_{50}$Fe$_{50}$ multilayer was observed to be about twice greater than that of the cross-plane electrical conductivity. The observation of the giant magneto-thermal resistance effect clarifies a potential of spintronic multilayers as thermal switching devices.

preprint2020arXiv

Contributions of magnetic structure and nitrogen to perpendicular magnetocrystalline anisotropy in antiperovskite $ε$-Mn$_4$N

To study how nitrogen contributes to perpendicular magnetocrystalline anisotropy (PMA) in the ferrimagnetic antiperovskite Mn$_4$N, we examined both the fabrication of epitaxial Mn$_4$N films with various nitrogen contents and first-principles density-functional calculations. Saturation magnetization ($M_{\rm s}$) peaks of 110 mT and uniaxial PMA energy densities ($K_{\rm u}$) of 0.1 MJ/m$^3$ were obtained for a N$_2$ gas flow ratio ($Q$) of $\sim 10 \%$ during sputtering deposition, suggesting nearly single-phase crystalline $ε$-Mn$_4$N. Segregation of $α$-Mn and nitrogen-deficient Mn$_4$N grains was observed for $Q \approx 6\%$, which was responsible for a decrease in the $M_{\rm s}$ and $K_{\rm u}$. The first-principles calculations revealed that the magnetic structure of Mn$_4$N showing PMA was "type-B" having a collinear structure, whose magnetic moments couple parallel within the c-plane and alternating along the c-direction. In addition, the $K_{\rm u}$ calculated using Mn$_{32}$N$_x$ supercells showed a strong dependence on nitrogen deficiency, in qualitative agreement with the experimental results. The second-order perturbation analysis of $K_{\rm u}$ with respect to the spin-orbit interaction revealed that not only spin-conserving but also spin-flip processes contribute significantly to the PMA in Mn$_4$N. We also found that both contributions decreased with increasing nitrogen deficiency, resulting in the reduction of $K_{\rm u}$. It was noted that the decrease in the spin-flip contribution occurred at the Mn atoms in face-centered sites. This is one of the specific PMA characteristics we found for antiperovskite-type Mn$_4$N.

preprint2020arXiv

Detecting quadrupole: a hidden source of magnetic anisotropy for Manganese alloys

Mn-based alloys exhibit unique properties in the spintronics materials possessing perpendicular magnetic anisotropy (PMA) beyond the Fe and Co-based alloys. It is desired to figure out the quantum physics of PMA inherent to Mn-based alloys, which have never been reported. Here, the origin of PMA in ferrimagnetic Mn$_{3-δ}$Ga ordered alloys is investigated to resolve antiparallel-coupled Mn sites using x-ray magnetic circular and linear dichroism (XMCD/XMLD) and a first-principles calculation. We found that the contribution of orbital magnetic moments in PMA is small from XMCD and that the finite quadrupole-like orbital distortion through spin-flipped electron hopping is dominant from XMLD and theoretical calculations. These findings suggest that the spin-flipped orbital quadrupole formations originate from the PMA in Mn$_{3-δ}$Ga and bring the paradigm shift in the researches of PMA materials using x-ray magnetic spectroscopies.

preprint2020arXiv

High-temperature dependence of anomalous Ettingshausen effect in SmCo$_5$-type permanent magnets

The anomalous Ettingshausen effect (AEE) in SmCo$_5$-type permanent magnets has been investigated in the high-temperature range from room temperature to around 600 K. The anomalous Ettingshausen coefficient of the SmCo$_5$ and (SmGd)Co$_5$ magnets monotonically increases with increasing the temperature and shows the similar temperature dependence, while the coefficient of SmCo$_5$ is slightly larger than that of (SmGd)Co$_5$ at high temperatures. The dimensionless figure of merit for AEE in SmCo$_5$ at high temperatures is much greater than the previous record obtained for the anomalous Nernst effect. The observed high-temperature behavior of AEE is discussed based on the first-principles calculations of transverse transport coefficients.

preprint2020arXiv

Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000$\%$, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial $d$-$p$ antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).

preprint2020arXiv

Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4

Through Bayesian optimization and the least absolute shrinkage and selection operator (LASSO) technique combined with first-principles calculations, we investigated the tunnel magnetoresistance (TMR) effect of Fe/disordered-MgAl2O4(MAO)/Fe(001) magnetic tunnel junctions (MTJs) to determine structures of disordered-MAO that give large TMR ratios. The optimal structure with the largest TMR ratio was obtained by Bayesian optimization with 1728 structural candidates, where the convergence was reached within 300 structure calculations. Characterization of the obtained structures suggested that the in-plane distance between two Al atoms plays an important role in determining the TMR ratio. Since the Al-Al distance of disordered MAO significantly affects the imaginary part of complex band structures, the majority-spin conductance of the Δ1 state in Fe/disordered-MAO/Fe MTJs increases with increasing in-plane Al-Al distance, leading to larger TMR ratios. Furthermore, we found that the TMR ratio tended to be large when the ratio of the number of Al, Mg, and vacancies in the [001] plane was 2:1:1, indicating that the control of Al atomic positions is essential to enhancing the TMR ratio in MTJs with disordered MAO. The present work reveals the effectiveness and advantage of material informatics combined with first-principles transport calculations in designing high-performance spintronic devices based on MTJs.

preprint2020arXiv

Strain-induced enhancement of the Seebeck effect in magnetic tunneling junctions via interface resonant tunneling: Ab-initio study

We investigate the thermoelectric properties of Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs) by means of the linear-response theory combined with a first-principles-based Landauer-Büttiker approach. We find that the Seebeck coefficient of Fe/MgO/Fe(001) MTJs strongly depends on the barrier thickness and the tetragonal distortion. A compressive tetragonal distortion of the in-plane lattice parameter in the MTJs provides interface resonant states just above the Fermi energy. This causes resonant tunneling in the MTJs and significantly enhances the Seebeck coefficient when the thickness of the MgO barrier is around 1 nm (four or five atomic layers of MgO). Moreover, an extensive tetragonal distortion of the in-plane lattice parameter pushes the interface states away from the Fermi energy, leading to a reduction of the Seebeck coefficient. Furthermore, we find that the interface resonant tunneling enhances the power factor of the MTJs for the compressive distortion. These results indicate that control of the barrier thickness and the tetragonal distortion will be effective for maximizing the thermoelectric properties of MTJs.

preprint2012arXiv

A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions

We investigated the spin-dependent transport properties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs) on the basis of first-principles calculations of the electronic structures and the ballistic conductance. The calculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJ was about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ (1600%) for the same barrier thickness. However, there was an evanescent state with delta 1 symmetry in the energy gap around the Fermi level of normal spinel MgAl2O4, indicating the possibility of a large TMR in Fe/MgAl2O4/Fe(001) MTJs. The small TMR ratio of the Fe/MgAl2O4/Fe(001) MTJ was due to new conductive channels in the minority spin states resulting from a band-folding effect in the two-dimensional (2-D) Brillouin zone of the in-plane wave vector (k//) of the Fe electrode. Since the in-plane cell size of MgAl2O4 is twice that of the primitive in-plane cell size of bcc Fe, the bands in the boundary edges are folded, and minority-spin states coupled with the delta 1 evanescent state in the MgAl2O4 barrier appear at k//=0, which reduces the TMR ratio of the MTJs significantly.

preprint2012arXiv

Origin of perpendicular magneto-crystalline anisotropy in L10-FeNi under tetragonal distortion

We investigated the origin of perpendicular magneto-crystalline anisotropy (MCA) in L10 ordered FeNi alloy using first-principles density-functional calculations. We found that the perpendicular MCA of L10-FeNi arises predominantly from the constituent Fe atoms, which is consistent with recent measurements of the anisotropy of the Fe orbital magnetic moment of L10-FeNi by x-ray magnetic circular dichroism. Analysis of the second-order perturbation of the spin-orbit interaction indicates that spin-flip excitations between the occupied majority-spin and unoccupied minority-spin bands make a considerable contribution to the perpendicular MCA as does the spin-conservation term in the minority-spin bands. Furthermore, the MCA energy increases as the in-plane lattice parameter decreases (increasing the axial ratio c/a). The increase in the MCA energy can be attributed to further enhancement of the spin-flip term due to modulation of the Fe d(xy) and d(x2-y2) orbital components around the Fermi level under the compressive in-plane distortion.