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Shinichi Nishihaya

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2 publications

preprint2021arXiv

Enhancement of spin-orbit coupling in Dirac semimetal Cd3_{3}As2_{2} films by Sb-doping

We present a study on magnetotransport in films of the topological Dirac semimetal Cd3_{3}As2_{2} doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find a significant enhancement of the spin-orbit scattering rate, indicating that Sb doping leads to a strong increase of the pristine band-inversion energy. We discuss possible origins of this large enhancement by comparing Sb-doped Cd3_{3}As2_{2} with other compound semiconductors. Sb-doped Cd3_{3}As2_{2} will be a suitable system for further investigations and functionalization of topological Dirac semimetals.

preprint2016arXiv

Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting A{A}-site vacant perovskite WO3_3 epitaxial thin films as a channel material and two different electrolytes as gating agent. In situ\textit{In situ} measurements of x-ray diffraction and channel resistance performed during the gating revealed that in both the cases WO3_3 thin film reaches a new metallic state through multiple phase transitions, accompanied by the change in out-of-plane lattice constant. Electrons are electrostatically accumulated from the interface side with an ionic liquid, while alkaline metal ions are more uniformly intercalated into the film with a polymer electrolyte. We systematically demonstrate this difference in the electrostatic and electrochemical processes, by comparing doped carrier density, lattice deformation behavior, and time constant of the phase transitions.

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