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Masaki Uchida

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

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preprint2022arXiv

Strain-modulated anisotropic electronic structure in superconducting RuO$_2$ films

The binary ruthenate, RuO$_2$, has been the subject of intense interest due to its itinerant antiferromagnetism and strain-induced superconductivity. The strain mechanism and its effect on the microscopic electronic states leading to the normal and superconducting state, however, remain undisclosed. Here, we investigate highly-strained epitaxial (110) RuO$_2$ films using polarization-dependent oxygen K-edge X-ray absorption spectroscopy (XAS). Through the detection of pre-edge peaks, arising from O:$2p$ - Ru:$4d$ hybridization, we uncover the effects of epitaxial strain on the orbital/electronic structure near the Fermi level. Our data show robust strain-induced shifts of orbital levels and a reduction of hybridization strength. Furthermore, we reveal a pronounced in-plane anisotropy of the electronic structure along the $[110]/[1\bar{1}0]$ directions naturally stemming from the symmetry-breaking epitaxial strain of the substrate. The $B_{2g}$ symmetry component of the epitaxially-enforced strain breaks a sublattice degeneracy, resulting in an increase of the density of states at the Fermi level ($E_F$), possibly paving the way to superconductivity. These results underscore the importance of the effective reduction from tetragonal to orthorhombic lattice symmetry in (110) RuO$_2$ films and its relevance towards the superconducting and magnetic properties.

preprint2021arXiv

Enhancement of spin-orbit coupling in Dirac semimetal Cd$_{3}$As$_{2}$ films by Sb-doping

We present a study on magnetotransport in films of the topological Dirac semimetal Cd$_{3}$As$_{2}$ doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find a significant enhancement of the spin-orbit scattering rate, indicating that Sb doping leads to a strong increase of the pristine band-inversion energy. We discuss possible origins of this large enhancement by comparing Sb-doped Cd$_{3}$As$_{2}$ with other compound semiconductors. Sb-doped Cd$_{3}$As$_{2}$ will be a suitable system for further investigations and functionalization of topological Dirac semimetals.

preprint2020arXiv

Characterization of Sr2RuO4 Josephson junctions made of epitaxial films

We have studied fundamental properties of weak-link Sr2RuO4/Sr2RuO4 Josephson junctions fabricated by making a narrow constriction on superconducting Sr2RuO4 films through laser micro-patterning. The junctions show a typical overdamped behavior with much higher critical current density, compared with those previously reported for bulk Sr2RuO4/s-wave superconductor junctions. Observed magnetic field and temperature dependences of the Josephson critical current suggest that the chiral p-wave is unlikely for the superconducting symmetry, encouraging further theoretical calculations of the Sr2RuO4/Sr2RuO4 type junctions.

preprint2016arXiv

Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin films as a channel material and two different electrolytes as gating agent. $\textit{In situ}$ measurements of x-ray diffraction and channel resistance performed during the gating revealed that in both the cases WO$_3$ thin film reaches a new metallic state through multiple phase transitions, accompanied by the change in out-of-plane lattice constant. Electrons are electrostatically accumulated from the interface side with an ionic liquid, while alkaline metal ions are more uniformly intercalated into the film with a polymer electrolyte. We systematically demonstrate this difference in the electrostatic and electrochemical processes, by comparing doped carrier density, lattice deformation behavior, and time constant of the phase transitions.