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Shijian Zheng

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2 published item(s)

preprint2022arXiv

Efficient Test-Time Model Adaptation without Forgetting

Test-time adaptation (TTA) seeks to tackle potential distribution shifts between training and testing data by adapting a given model w.r.t. any testing sample. This task is particularly important for deep models when the test environment changes frequently. Although some recent attempts have been made to handle this task, we still face two practical challenges: 1) existing methods have to perform backward computation for each test sample, resulting in unbearable prediction cost to many applications; 2) while existing TTA solutions can significantly improve the test performance on out-of-distribution data, they often suffer from severe performance degradation on in-distribution data after TTA (known as catastrophic forgetting). In this paper, we point out that not all the test samples contribute equally to model adaptation, and high-entropy ones may lead to noisy gradients that could disrupt the model. Motivated by this, we propose an active sample selection criterion to identify reliable and non-redundant samples, on which the model is updated to minimize the entropy loss for test-time adaptation. Furthermore, to alleviate the forgetting issue, we introduce a Fisher regularizer to constrain important model parameters from drastic changes, where the Fisher importance is estimated from test samples with generated pseudo labels. Extensive experiments on CIFAR-10-C, ImageNet-C, and ImageNet-R verify the effectiveness of our proposed method.

preprint2011arXiv

Unusually large enhancement of thermopower in an electric field induced two-dimensional electron gas

Two-dimensionally confined electrons showing unusually large thermopower (S) have attracted attention as a potential approach for developing high performance thermoelectric materials. However, enhanced S has never been observed in electric field induced two-dimensional electron gas (2DEG). Here we demonstrate electric field modulation of S for a field effect transistor (FET) fabricated on a SrTiO3 crystal using a water-infiltrated nanoporous glass as the gate insulator. An electric field application confined carrier electrons up to ~2E15 /cm^2 in an extremely thin (~2 nm) 2DEG. Unusually large enhancement of |S| was observed when the sheet carrier concentration exceeded 2.5E14 /cm^2, and it modulated from ~600 (~2E15 /cm^2) to ~950 μV/K (~8E14 /cm^2), which were approximately five times larger than those of the bulk, clearly demonstrating that an electric field induced 2DEG provides unusually large enhancement of |S|.