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Researcher profile

Shigeki Takeuchi

Shigeki Takeuchi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phcond-mat.mtrl-sciphysics.optics

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Published work

3 published item(s)

preprint2021arXiv

Frequency correlated photon generation at telecom band using silicon nitride ring cavities

Frequency entangled photon sources are in high demand in a variety of optical quantum technologies, including quantum key distribution, cluster state quantum computation and quantum metrology. In the recent decade, chip-scale entangled photon sources have been developed using silicon platforms, offering robustness, large scalability and CMOS technology compatibility. Here, we report the generation of frequency correlated photon pairs using a 150-GHz silicon nitride ring cavity. First, the device is characterized for studying the phase matching condition during spontaneous four-wave mixing. Next, we evaluate the joint spectrum intensity of the generated photons and confirm the photon pair generation in a total of42 correlated frequency mode pairs, corresponding to a bandwidth of 51.25 nm. Finally, the experimental results are analyzed and the joint spectral intensity is quantified in terms of the phase matching condition.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Fourier-transform infrared spectroscopy in the fingerprint region

Harnessing the quantum interference of photon-pair generation processes, infrared quantum absorption spectroscopy (IRQAS) can extract the infrared optical properties of a sample through visible or near-infrared photon detection without the need for an infrared optical source or detector, which has been an obstacle for higher sensitivity and spectrometer miniaturization. However, experimental demonstrations have been limited to wavelengths shorter than 5 um or in the terahertz region, and have not been realized in the so-called fingerprint region of 1500- 500 cm^-1 (6.6 to 20 um), which is commonly used to identify chemical compounds or molecules. Here we report the experimental demonstration of quantum Fourier transform infrared (QFTIR) spectroscopy in the fingerprint region, by which both absorption and phase spectra (complex spectra) can be obtained from Fourier transformed quantum interferograms obtained with a single pixel visible-light detector. As demonstrations, we obtained the transmittance spectrum of a silicon wafer at around 10 um (1000 cm^-1) and complex transmittance spectrum of a synthetic fluoropolymer sheet, polytetrafluoroethylene, in the wavelength range of 8 to 10.5 um (1250 to 950 cm^-1), where absorption due to symmetric and asymmetric stretching modes of C-F bonds is clearly observed. The signal-to-noise ratio per unit spectral width and unit probe light intensity of our QFTIR spectroscopy method outperforms conventional FTIR spectroscopy by a factor of 10^2. These results open the way for new forms of spectroscopic devices based on quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The Anomalous Formation of Irradiation Induced Nitrogen-Vacancy Centers in 5-Nanometer-Sized Detonation Nanodiamonds

Nanodiamonds containing negatively charged nitrogen-vacancy (NV$^-$) centers are versatile room-temperature quantum sensors in a growing field of research. Yet, knowledge regarding the NV-formation mechanism in very small particles is still limited. This study focuses on the formation of the smallest NV$^-$-containing diamonds, 5 nm detonation nanodiamonds (DNDs). As a reliable method to quantify NV$^-$ centers in nanodiamonds, half-field signals in electron paramagnetic resonance (EPR) spectroscopy are recorded. By comparing the NV$^-$ concentration with a series of nanodiamonds from high-pressure high-temperature (HPHT) synthesis (10 - 100 nm), it is shown that the formation process in 5 nm DNDs is unique in several aspects. NV$^-$ centers in DNDs are already formed at the stage of electron irradiation, without the need for high-temperature annealing. The effect is explained in terms of "self-annealing", where size and type dependent effects enable vacancy migration close to room temperature. Although our experiments show that NV$^-$ concentration generally increases with particle size, remarkably, the NV$^-$ concentration in 5 nm DNDs surpasses that of 20 nm-sized nanodiamonds. Using Monte Carlo simulations, we show that the ten times higher substitutional nitrogen concentration in DNDs compensates the vacancy loss induced by the large relative particle surface. Upon electron irradiation at a fluence of $1.5 \times 10 ^{19}$ e$^-$/cm$^2$, DNDs show a 12.5-fold increment in the NV$^-$ concentration with no sign of saturation. These findings can be of interest for the creation of defects in other very small semiconductor nanoparticles beyond NV-nanodiamonds as quantum sensors.

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