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Jincheng Zhuang

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Published work

16 published item(s)

preprint2026arXiv

Principal ideal problem and ideal shortest vector over rational primes in power-of-two cyclotomic fields

The shortest vector problem (SVP) over ideal lattices is closely related to the Ring-LWE problem, which is widely used to build post-quantum cryptosystems. Power-of-two cyclotomic fields are frequently adopted to instantiate Ring-LWE. Pan et al. (EUROCRYPT~2021) explored the SVP over ideal lattices via the decomposition fields and, in particular determined the length of the shortest vector in prime ideals lying over rational primes $p\equiv3,5\pmod{8}$ in power-of-two cyclotomic fields via explicit construction of reduced lattice bases. In this work, we first provide a new method (different from analyzing lattice bases) to analyze the length of the shortest vector in prime ideals in $\mathbb{Z}[ζ_{2^{n+1}}]$ when $p\equiv3,5\pmod{8}$. Then we precisely characterize the length of the shortest vector in the cases of $p\equiv7,9\pmod{16}$. Furthermore, we derive a new upper bound $\sqrt[4]{2^{2n+1}p}$ for this length, which is tighter than the bound $2^n\sqrt[4]{p}$ obtained from Minkowski's theorem. Our key technique is to investigate whether a generator of a principal ideal can achieve the shortest length after embedding as a vector. If this holds for the ideal, finding the shortest vector in this ideal can be reduced to finding its shortest generator.

preprint2022arXiv

Syndrome decoding meets multiple instances

The NP-hard problem of decoding random linear codes is crucial to both coding theory and cryptography. In particular, this problem underpins the security of many code based post-quantum cryptographic schemes. The state-of-art algorithms for solving this problem are the information syndrome decoding algorithm and its advanced variants. In this work, we consider syndrome decoding in the multiple instances setting. Two strategies are applied for different scenarios. The first strategy is to solve all instances with the aid of the precomputation technique. We adjust the current framework and distinguish the offline phase and online phase to reduce the amortized complexity. Further, we discuss the impact on the concrete security of some post-quantum schemes. The second strategy is to solve one out of many instances. Adapting the analysis for some earlier algorithm, we discuss the effectiveness of using advanced variants and confirm a related folklore conjecture.

preprint2021arXiv

Facet Dependent Topological Phase Transition in Bi4Br4

The realization of the coexistence of various topologically nontrivial surface states in one material is expected to lay a foundation for new electric applications with selective robust spin current. Here we apply the magnetoconductivity characteristic and angle-resolved photoemission spectroscopy (ARPES) to visualize the surface-selected electronic features evolution of quasi-one-dimensional material Bi4Br4. The transport measurements indicate the quantum interference correction to conductivity possesses symbolic spin rotational characteristic correlated to the value of Berry phase with the effects of weak localization and weak antilocalization for (001) and (100) surfaces, respectively. The ARPES spectra provide the experimental evidence for quasi-one-dimensional massless Dirac surface state at the side (100) surface and anisotropic massive Dirac surface state at the top (001) surface, respectively, which is highly coincide with the angle-dependent scaling behavior of magnetoconductivity. Our results reveal the facet dependent topological phases in quasi-one-dimensional Bi4Br4, stimulating the further investigations of this dual topology classes and the applications of the feasible technologies of topological spintronics.

preprint2020arXiv

Experimental Realization of Two-Dimensional Buckled Lieb lattice

Two-dimensional (2D) materials with a Lieb lattice can host exotic electronic band structures. Such a system does not exist in nature, and it is also difficult to obtain in the laboratory due to its structural instability. Here, we experimentally realized a 2D system composed of a tin overlayer on an aluminum substrate by molecular beam epitaxy. The specific arrangement of Sn atoms on the Al(100) surface, which benefits from favorable interface interactions, forms a stabilized buckled Lieb lattice. Our theoretical calculations indicate a partially broken nodal line loop protected by its mirror reflection symmetry and a topologically nontrivial insulating state with a spin-orbital coupling (SOC) effect in the band structure of this Lieb lattice. The electronic structure of this system has also been experimentally characterized by scanning tunnelling spectroscopy and angle-resolved photoemmision spectroscopy. Our work provides an appealing method for constructing 2D quantum materials based on the Lieb lattice.

preprint2020arXiv

Two-dimensional van der Waals Heterostructures for Synergistically Improved Surface Enhanced Raman Spectroscopy

Surface enhanced Raman spectroscopy (SERS) is a precise and non-invasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, pharmaceutics, and diagnostic biology. However, it is still a challenge to produce highly sensitive and reusable SERS substrates with minimum fluorescence background. In this work, we propose the use of van der Waals heterostructures of two-dimensional materials (2D materials) to cover plasmonic metal nanoparticles to solve this challenge. The heterostructures of atomically thin boron nitride (BN) and graphene provide synergistic effects: (1) electrons could tunnel through the atomically thin BN, allowing the charge transfer between graphene and probe molecules to suppress fluorescence background; (2) the SERS sensitivity is enhanced by graphene via chemical enhancement mechanism (CM) in addition to electromagnetic field mechanism (EM); (3) the atomically thin BN protects the underlying graphene and Ag nanoparticles from oxidation during heating for regeneration at 360 °C in the air so that the SERS substrates could be reused. These advances will facilitate wider applications of SERS, especially on the detection of fluorescent molecules with higher sensitivity.

preprint2015arXiv

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

In this letter, we report that the special coupling between Dirac fermion and lattice vibrations, in other words, electron-phonon coupling (EPC), in silicene layers on Ag(111) surface was probed by an in-situ Raman spectroscopy. We find the EPC is significantly modulated due to tensile strain, which results from the lattice mismatch between silicene and the substrate, and the charge doping from the substrate. The special phonon modes corresponding to two-dimensional electron gas scattering at edge sites in the silicene were identified. Detecting relationship between EPC and Dirac fermion through the Raman scattering will provide a direct route to investigate the exotic property in buckled two-dimensional honeycomb materials.

preprint2015arXiv

Metal-Silicene Interaction Studied by Scanning Tunneling Microscopy

Ag atoms have been deposited on 3x3 silicene and R3xR3 silicene films by molecular beam epitaxy method in ultrahigh vacuum. Using scanning tunneling microscopy and Raman spectroscopy, we found that Ag atoms do not form chemical bonds with both 3x3 silicene and R3xR3 silicene films,which is due to chemically inert surface of silicene. On 3x3 silicene films, Ag atoms mostly form into stable flat top Ag islands. In contrast, Ag atoms form nanoclusters and glide on silicene films, suggesting more inert nature. Raman spectroscopy suggests that there is more sp2 hybridization in R3xR3 than in R7xR7/3x3silicene films

preprint2015arXiv

Observation of van Hove Singularities in Twisted Silicene Multilayers

Interlayer interactions perturb the electronic structure of two-dimensional materials and lead to new physical phenomena, such as van Hove singularities and Hofstadter's butterfly pattern. Silicene, the recently discovered two-dimensional form of silicon, is quite unique, in that silicon atoms adopt competing <i>sp</i><sup>2</sup> and <i>sp</i><sup>3</sup> hybridization states leading to a low-buckled structure promising relatively strong interlayer interaction. In multilayer silicene, the stacking order provides an important yet rarely explored degree of freedom for tuning its electronic structures through manipulating interlayer coupling. Here, we report the emergence of van Hove singularities in the multilayer silicene created by an interlayer rotation. We demonstrate that even a large-angle rotation (> 20<sup>o</sup>) between stacked silicene layers can generate a Moire pattern and van Hove singularities due to the strong interlayer coupling in multilayer silicene. Our study suggests an intriguing method for expanding the tunability of the electronic structure for electronic applications in this two-dimensional material.

preprint2014arXiv

Anisotropic Superconductivity of Ca1-xLaxFeAs2 (x ~ 0.18) Single Crystal

Anisotropic superconducting properties including the upper critical field Hc2, thermal activation energy U0, and critical current density Jc are systematically studied in a large Ca1-xLaxFeAs2 single crystal (x ~ 0.18). The obtained Hc2 bears a moderate anisotropy gamma of approximately 2-4.2, located between those of '122' Ba1-xKxFe2As2 (1 < gamma < 2) and '1111' NdFeAsO1-xFx (5 < gamma < 9.2). Both the magnitude of U0 and its field dependence are very similar to those of NdFeAsO1-xFx, also indicating anisotropic superconductivity. Moreover, high and anisotropic Jc's exceeding 10^5 A/cm2 have been calculated from the magnetization hysteresis loops, indicating the existence of strong bulk-dominated pinning in the present superconducting material.

preprint2014arXiv

Bulk Superconductivity in Fe1+yTe0.6Se0.4 Induced by Removal of Excess Fe

Experimental evidences from transport, magnetic, and magneto-optical (MO) image measurements confirmed that arsenic (As) vapor annealing was another effective way to induce bulk superconductivity with isotropic, large, and homogenous superconducting critical current density (Jc) in Fe1+yTe0.6Se0.4 single crystal. Since As is an exotic and easily detectable heavy element to Fe1+yTe0.6Se0.4 single crystal, As vapor annealing is very advantageous for the study of annealing mechanism. Detailed micro-structural and elemental analyses exclude the possibility that intercalating or doping effect may happen in the other post-annealing methods, proving that Fe reacts with As on the surface of the crystal and the reaction itself acts as a driving force to drag excess Fe out. The removal of excess Fe results in the good superconductivity performance.

preprint2014arXiv

Effects of Oxygen Adsorption on the Surface State of Epitaxial Silicene on Ag(111)

Epitaxial silicene, which is one single layer of silicon atoms packed in a honeycomb structure, demonstrates a strong interaction with the substrate that dramatically affects its electronic structure. The role of electronic coupling in the chemical reactivity between the silicene and the substrate is still unclear so far, which is of great importance for functionalization of silicene layers. Here, we report the reconstructions and hybridized electronic structures of epitaxial 4x4 silicene on Ag(111), which are revealed by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. The hybridization between Si and Ag results in a metallic surface state, which can gradually decay due to oxygen adsorption. X-ray photoemission spectroscopy confirms the decoupling of Si-Ag bonds after oxygen treatment as well as the relatively oxygen resistance of Ag(111) surface, in contrast to 4x4 silicene [with respect to Ag(111)]. First-principles calculations have confirmed the evolution of the electronic structure of silicene during oxidation. It has been verified experimentally and theoretically that the high chemical activity of 4x4 silicene is attributable to the Si pz state, while the Ag(111) substrate exhibits relatively inert chemical behavior.

preprint2014arXiv

Tuning the Band Gap in Silicene by Oxidation

Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR13, 4x4, and 2R3x2R3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on R13xR13, 4x4, and 2R3x2R3 structures under oxidation, which is verified by in-situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.

preprint2014arXiv

Unabridged phase diagram for single-phased FeSexTe1-x thin films

A complete phase diagram and its corresponding physical properties are essential prerequisites to understand the underlying mechanism of iron based superconductivity. For the structurally simplest 11 (FeSeTe) system, earlier attempts using bulk samples have not been able to do so due to the fabrication difficulties. Here, thin FeSexTe1-x films with the Se content covering the full range were fabricated by using pulsed laser deposition method. Crystal structure analysis shows that all films retain the tetragonal structure in room temperature. Significantly, the highest superconducting transition temperature (TC = 20 K) occurs in the newly discovered domain, 0.6 - 0.8. The single-phased superconducting dome for the full Se doping range is the first of its kind in iron chalcogenide superconductors. Our results present a new avenue to explore novel physics as well as to optimize superconductors.

preprint2013arXiv

On Determining Deep Holes of Generalized Reed-Solomon Codes

For a linear code, deep holes are defined to be vectors that are further away from codewords than all other vectors. The problem of deciding whether a received word is a deep hole for generalized Reed-Solomon codes is proved to be co-NP-complete. For the extended Reed-Solomon codes $RS_q(\F_q,k)$, a conjecture was made to classify deep holes by Cheng and Murray in 2007. Since then a lot of effort has been made to prove the conjecture, or its various forms. In this paper, we classify deep holes completely for generalized Reed-Solomon codes $RS_p (D,k)$, where $p$ is a prime, $|D| > k \geqslant \frac{p-1}{2}$. Our techniques are built on the idea of deep hole trees, and several results concerning the Erd{ö}s-Heilbronn conjecture.

preprint2013arXiv

Traps to the BGJT-Algorithm for Discrete Logarithms

In the recent breakthrough paper by Barbulescu, Gaudry, Joux and Thom{é}, a quasi-polynomial time algorithm (QPA) is proposed for the discrete logarithm problem over finite fields of small characteristic. The time complexity analysis of the algorithm is based on several heuristics presented in their paper. We show that some of the heuristics are problematic in their original forms, in particular, when the field is not a Kummer extension. We believe that the basic idea behind the new approach should still work, and propose a fix to the algorithm in non-Kummer cases, without altering the quasi-polynomial time complexity. The modified algorithm is also heuristic. Further study is required in order to fully understand the effectiveness of the new approach.

preprint2012arXiv

On Certain Computations of Pisot Numbers

This paper presents two algorithms on certain computations about Pisot numbers. Firstly, we develop an algorithm that finds a Pisot number $α$ such that $\Q[α] = \F$ given a real Galois extension $\F$ of $\Q$ by its integral basis. This algorithm is based on the lattice reduction, and it runs in time polynomial in the size of the integral basis. Next, we show that for a fixed Pisot number $α$, one can compute $ [α^n] \pmod{m}$ in time polynomial in $(\log (m n))^{O(1)}$, where $m$ and $n$ are positive integers.