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Shengjie Shi

Shengjie Shi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phComputer Vision

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Published work

6 published item(s)

preprint2022arXiv

Tuning nanosecond switching of spin-orbit torque driven magnetic tunnel junctions

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high speed, low energy magnetic recording technologies. While fast switching has been demonstrated in three terminal magnetic tunnel junctions (3T-MTJs) through applying short voltage pulses in the heavy metal channel, detailed understanding of the switching mechanism is lacking due to the complexity of the multi-layered magnetic structure and the three-terminal geometry. We show in this letter that current-induced effective fields play a key role in the fast switching and by tuning the applied external field we can finely tune the symmetry of the pulse switching between two switching polarities, namely parallel to anti-parallel (P-AP) and anti-parallel to parallel (AP-P). These results show that the manipulation of detailed magnetic configuration is the key to fast switching and is a useful way for future optimization of SOT memory and further applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Towards Realistic Face Photo-Sketch Synthesis via Composition-Aided GANs

Face photo-sketch synthesis aims at generating a facial sketch/photo conditioned on a given photo/sketch. It is of wide applications including digital entertainment and law enforcement. Precisely depicting face photos/sketches remains challenging due to the restrictions on structural realism and textural consistency. While existing methods achieve compelling results, they mostly yield blurred effects and great deformation over various facial components, leading to the unrealistic feeling of synthesized images. To tackle this challenge, in this work, we propose to use the facial composition information to help the synthesis of face sketch/photo. Specially, we propose a novel composition-aided generative adversarial network (CA-GAN) for face photo-sketch synthesis. In CA-GAN, we utilize paired inputs including a face photo/sketch and the corresponding pixel-wise face labels for generating a sketch/photo. In addition, to focus training on hard-generated components and delicate facial structures, we propose a compositional reconstruction loss. Finally, we use stacked CA-GANs (SCA-GAN) to further rectify defects and add compelling details. Experimental results show that our method is capable of generating both visually comfortable and identity-preserving face sketches/photos over a wide range of challenging data. Our method achieves the state-of-the-art quality, reducing best previous Frechet Inception distance (FID) by a large margin. Besides, we demonstrate that the proposed method is of considerable generalization ability. We have made our code and results publicly available: https://fei-hdu.github.io/ca-gan/.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. Non-volatile magnetoresistive random access memories (MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and more energy-efficient than conventional semiconductor and spin-transfer-torque magnetic memories. This work reports that the spin Hall effect of low-resistivity Au0.25Pt0.75 thin films enables ultrafast antidamping-torque switching of SOT-MRAM devices for current pulse widths as short as 200 ps. If combined with industrial-quality lithography and already-demonstrated interfacial engineering, our results show that an optimized MRAM cell based on Au0.25Pt0.75 can have energy-efficient, ultrafast, and reliable switching, e.g. a write energy of < 1 fJ (< 50 fJ) for write error rate of 50% (<1e-5) for 1 ns pulses. The antidamping torque switching of the Au0.25Pt0.75 devices is 10 times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced non-uniformity within the free layer. These results demonstrate the feasibility of Au0.25Pt0.75-based SOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient, low-impedance, and unlimited-endurance memory.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures

We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ device by a nanocryotron device in parallel configuration of a realistic memory cell structure. These results suggest the viability of the SHE-MTJ structure as a cryogenic memory element for exascale superconducting computing systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures

We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/Oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strong Spin Hall Effect in the Antiferromagnet PtMn

Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both theoretical and experimental reports indicate that the non-collinear and collinear metallic antiferromagnet (AF) materials can have both a large anomalous Hall effect (AHE) and a strong SHE. Here we report a systematic study of the SHE in PtMn with several PtMn/FM systems. By using interface engineering to reduce the 'spin memory loss' we obtain a spin torque efficiency as large as 0.24. This is more than twice the previously reported spin torque efficiency for PtMn. We also find that the apparent spin diffusion length in PtMn is surprisingly long (about 2.3nm).

0 citations0 reviewsNo code linkedOpen access