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Shengdan Tao

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Published work

2 published item(s)

preprint2026arXiv

Band-Structure-Independent Topology from Nonsymmorphic Wannier Complexes

Nonsymmorphic symmetries can enforce band connectivity that obstructs a single-band Wannier description. We show that a fractional translation $\mathcal{L}$ connecting distinct high-symmetry Wyckoff positions generically renders the Wannier center of an individual band gauge ill-defined, requiring a symmetry-enforced multiband object -- a Wannier complex. We formulate a real-space topological classification of Wannier complexes and show that, when $\mathcal{L}$ is combined with certain point-group symmetries (notably $C_4$ and $C_3$), all symmetry-allowed Wannier-complex configurations carry a nontrivial quantized total electric polarization. This yields boundary phenomena that persist across symmetry-preserving deformations of the Hamiltonian, including parameter regimes with and without bulk gaps. We demonstrate the mechanism in minimal tight-binding models exhibiting M{ö}bius-twisted Wilson-loop structures and higher-order corner modes, and propose experimental signatures in a dielectric photonic crystal and a first-principles electronic platform octa-graphene, accompanied by a three-dimensional extension.

preprint2022arXiv

Designing Ultra-Flat Bands in Twisted Bilayer Materials at Large Twist Angles without specific degree

Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moire superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer alpha-In2Se3 and bilayer InSe. For bilayer alpha-In2Se3, we show that a twist angle -13.2 degree is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle -1.1 degree. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way towards engineering such flat bands in a large family of 2D materials.