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Researcher profile

Jiaojiao Zhu

Jiaojiao Zhu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

4 published item(s)

preprint2022arXiv

Designing Ultra-Flat Bands in Twisted Bilayer Materials at Large Twist Angles without specific degree

Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moire superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer alpha-In2Se3 and bilayer InSe. For bilayer alpha-In2Se3, we show that a twist angle -13.2 degree is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle -1.1 degree. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way towards engineering such flat bands in a large family of 2D materials.

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preprint2021arXiv

Phononic real Chern insulator with protected corner modes in graphynes

Higher-order topological insulators have attracted great research interest recently. Different from conventional topological insulators, higher-order topological insulators do not necessarily require spin-orbit coupling, which makes it possible to realize them in spinless systems. Here, we study phonons in 2D graphyne family materials. By using first-principle calculations and topology/symmetry analysis, we find that phonons in both graphdiyne and $γ$-graphyne exhibit a second-order topology, which belongs to the specific case known as real Chern insulator. We identify the nontrivial phononic band gaps, which are characterized by nontrivial real Chern numbers enabled by the spacetime inversion symmetry. The protected phonon corner modes are verified by the calculation on a finite-size nanodisk. Our study extends the scope of higher-order topology to phonons in real materials. The spatially localized phonon modes could be useful for novel phononic applications.

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preprint2021arXiv

Symmetry-Enforced Nodal Chain Phonons

Topological phonons in crystalline materials have been attracting great interest. However, most cases studied so far are direct generalizations of the topological states from electronic systems. Here, we reveal a novel class of topological phonons -- the symmetry-enforced nodal-chain phonons, which manifest features unique for phononic systems. We show that with $D_{2d}$ little co-group at a non-time-reversal-invariant-momentum point, the phononic nodal chain is guaranteed to exist owing to the vector basis symmetry of phonons, which is a unique character distinct from electronic and other systems. Combined with the spinless character, this makes the proposed nodal-chain phonons enforced by symmorphic crystal symmetries. We further screen all 230 space groups, and find five candidate groups. Interestingly, the nodal chains in these five groups exhibit two different patterns: for tetragonal systems, they are one-dimensional along the fourfold axis; for cubic systems, they form a three-dimensional network structure. Based on first-principles calculations, we identify K$_{2}$O as a realistic material hosting almost ideal nodal-chain phonons. We show that the effect of LO-TO splitting, another unique feature for phonons, helps to expose the nodal-chain phonons in K$_{2}$O in a large energy window. In addition, all the five candidate groups have spacetime inversion symmetry, so the nodal chains also feature a quantized $π$ Berry phase. This leads to drumhead surface phonon modes that must exist on multiple surfaces of a sample.

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preprint2020arXiv

Highly anisotropic two-dimensional metal in monolayer MoOCl$_2$

Anisotropy is a general feature in materials. Strong anisotropy could lead to interesting physical properties and useful applications. Here, based on first-principles calculations and theoretical analysis, we predict a stable two-dimensional (2D) material---the monolayer MoOCl$_2$, and show that it possesses intriguing properties related to its high anisotropy. Monolayer MoOCl$_2$ can be readily exfoliated from the van der Waals layered bulk, which has already been synthesized. We show that a high in-plane anisotropy manifests in the structural, phononic, mechanical, electronic, and optical properties of monolayer MoOCl$_2$. The material is a metal with highly anisotropic Fermi surfaces, giving rise to open orbits at the Fermi level, which can be probed in magneto-transport. Remarkably, the combination of high anisotropy and metallic character makes monolayer MoOCl$_2$ an almost ideal hyperbolic material. It has two very wide hyperbolic frequency windows from 0.41 eV (99 THz) to 2.90 eV (701 THz), and from 3.63 eV (878 THz) to 5.54 eV (1340 THz). The former window has a large overlap with the visible spectrum, and the dissipation for most part of this window is very small. The window can be further tuned by the applied strain, such that at a chosen frequency, a transition between elliptic and hyperbolic character can be induced by strain. Our work discovers a highly anisotropic 2D metal with extraordinary properties, which holds great potential for electronic and optical applications.

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