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Researcher profile

Shanawer Niaz

Shanawer Niaz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2022arXiv

Eco-friendly Bismuth Based Double Perovskites X$_2$NaBiCl$_6$ (X=Cs, Rb, K) for Optoelectronic and Thermoelectric Applications: A First-Principles Study

Owing to the energy shortages and various severe adverse effects of traditional fossil fuel power generation mechanisms, photovoltaic and thermoelectric materials are considered as the potential candidates for building non-traditional, efficient, and eco-friendly power generation portfolios. Lead-based perovskites have emerged as highly efficient, abundantly available, and low-cost materials for such applications but there are two major challenges i.e. chemical instability and the danger of toxic lead leaching that can badly affect both the environment and human health. Therefore, in search of lead-free perovskites, the replacement of lead with eco-friendly elements like bismuth and sodium may be a good strategy. Bismuth has very similar electronic properties as that of lead so it gives very efficient perovskites. Therefore, double perovskites containg Bi element X$_2$NaBiCl$_6$ (X=Cs, Rb, K) are explored here in terms of the structural, opto-electronic , and thermoelectric properties using the first-principles approach. The materials are attractive for optoelectronic applications such as ultraviolet sensors and detectors due to the prominent absorption peaks in ultraviolet region (10eV-30eV), low reflection (5-7%), and high optical conductivity. In addition to the alluring optoelectronic features, the compounds under study have figure of merit being close to unity so these are also promising for thermoelectric applications.

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preprint2016arXiv

A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

We present a comprehensive and integrated model-independent ab initio study of the structural, cohesive, electronic, and optical properties of silicon quantum dots of various morphologies and sizes in the framework of all-electron static and time-dependent density functional theory (DFT, TDFT), using the well-tested B3LYP and other properly chosen functional(s). Our raw ab initio results for all these properties for hydrogen passivated nanocrystals of various growth models and sizes from 1 to 32 Angstroms, are subsequently fitted, using power-law dependence with judicially selected exponents, based on dimensional and other plausibility arguments. As a result, we can reproduce with excellent accuracy not only known experimental and well-tested theoretical results in the regions of overlap, but we can also extrapolate successfully all the way to infinity, reproducing the band gap of crystalline silicon with almost chemical accuracy as well as the cohesive energy of the infinite crystal with very good accuracy. Thus, our results could be safely used, among others, as interpolation and extrapolation formulas not only for cohesive energy and band gap, but also for interrelated properties, such as dielectric constant and index of refraction of silicon nanocrystals of various sizes all the way up to infinity.

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preprint2016arXiv

Optical Properties of Pure and Mixed Germanium and Silicon Quantum Dots

We study the optical properties of hydrogen passivated silicon, germanium and mixed Ge/Si core/shell quantum dots (QDs) using high accuracy Density Functional Theory (DFT) and time-dependent DFT (TDFT). We employ the hybrid DFT functional of Becke, Lee, Yang and Parr (B3LYP) in combination with good quality basis sets. As we have shown in our previous work, this combination is an accurate and computationally efficient way for such calculations. The mixed quantum dots, as would be expected, are more versatile and offer more possibilities for band gap engineering, with gap values (electronic and optical) between those of the corresponding Si and Ge dots. Our results support the quantum confinement theory for all three types of QDs.

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preprint2016arXiv

Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

In most of the realistic ab initio and model calculations which have appeared on the emission of light from Si nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies and trends. It is also demonstrated that oxidizing constituent besides their spatial distribution significantly alters binding energy and highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (HOMO-LUMO gap up to 1.48 eV) within same composition.

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