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Aristides D. Zdetsis

Aristides D. Zdetsis appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-ph

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Published work

4 published item(s)

preprint2019arXiv

Bridging the Physics and Chemistry of graphene. From Huckel aromaticity to Dirac cones and topological insulators

By bridging graphene and benzene through a well-defined sequence of polycyclic aromatic hydrocarbons and their inherent shell structure, J. Phys. Chem. C, 2018, 122, 17526, it is shown that graphene is actually a coherent arrangement of interwoven benzene molecules, which are coordinated by aromaticity, shell structure and topology, all interrelated. The exotic properties of graphene are in fact macroscopic manifestations of aromaticity. At the molecular level this is revealed as a dynamical flipping of the atomic pz-orbitals belonging to different sublattices, leading to a dynamical interchange between aromatic and non-aromatic rings, associated with frontier occupied-unoccupied orbitals or valence-conduction bands interchange with opposite parities, in full agreement with many-body and topological insulators theory. Such dynamical interchange or coupling is driven by inversion symmetry-breaking, activated through geometrical frustration between sublattice and space group symmetry. This, for rectangular nanographenes, in contrast to hexagonal, leads to topological gapless edge states, which, contrary to opposite claims, are not spin polarized.

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preprint2016arXiv

A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

We present a comprehensive and integrated model-independent ab initio study of the structural, cohesive, electronic, and optical properties of silicon quantum dots of various morphologies and sizes in the framework of all-electron static and time-dependent density functional theory (DFT, TDFT), using the well-tested B3LYP and other properly chosen functional(s). Our raw ab initio results for all these properties for hydrogen passivated nanocrystals of various growth models and sizes from 1 to 32 Angstroms, are subsequently fitted, using power-law dependence with judicially selected exponents, based on dimensional and other plausibility arguments. As a result, we can reproduce with excellent accuracy not only known experimental and well-tested theoretical results in the regions of overlap, but we can also extrapolate successfully all the way to infinity, reproducing the band gap of crystalline silicon with almost chemical accuracy as well as the cohesive energy of the infinite crystal with very good accuracy. Thus, our results could be safely used, among others, as interpolation and extrapolation formulas not only for cohesive energy and band gap, but also for interrelated properties, such as dielectric constant and index of refraction of silicon nanocrystals of various sizes all the way up to infinity.

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preprint2016arXiv

Optical Properties of Pure and Mixed Germanium and Silicon Quantum Dots

We study the optical properties of hydrogen passivated silicon, germanium and mixed Ge/Si core/shell quantum dots (QDs) using high accuracy Density Functional Theory (DFT) and time-dependent DFT (TDFT). We employ the hybrid DFT functional of Becke, Lee, Yang and Parr (B3LYP) in combination with good quality basis sets. As we have shown in our previous work, this combination is an accurate and computationally efficient way for such calculations. The mixed quantum dots, as would be expected, are more versatile and offer more possibilities for band gap engineering, with gap values (electronic and optical) between those of the corresponding Si and Ge dots. Our results support the quantum confinement theory for all three types of QDs.

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preprint2016arXiv

Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

In most of the realistic ab initio and model calculations which have appeared on the emission of light from Si nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies and trends. It is also demonstrated that oxidizing constituent besides their spatial distribution significantly alters binding energy and highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (HOMO-LUMO gap up to 1.48 eV) within same composition.

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