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James Sifuna

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6works
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6 publications

preprint2022arXiv

Eco-friendly Bismuth Based Double Perovskites X2_2NaBiCl6_6 (X=Cs, Rb, K) for Optoelectronic and Thermoelectric Applications: A First-Principles Study

Owing to the energy shortages and various severe adverse effects of traditional fossil fuel power generation mechanisms, photovoltaic and thermoelectric materials are considered as the potential candidates for building non-traditional, efficient, and eco-friendly power generation portfolios. Lead-based perovskites have emerged as highly efficient, abundantly available, and low-cost materials for such applications but there are two major challenges i.e. chemical instability and the danger of toxic lead leaching that can badly affect both the environment and human health. Therefore, in search of lead-free perovskites, the replacement of lead with eco-friendly elements like bismuth and sodium may be a good strategy. Bismuth has very similar electronic properties as that of lead so it gives very efficient perovskites. Therefore, double perovskites containg Bi element X2_2NaBiCl6_6 (X=Cs, Rb, K) are explored here in terms of the structural, opto-electronic , and thermoelectric properties using the first-principles approach. The materials are attractive for optoelectronic applications such as ultraviolet sensors and detectors due to the prominent absorption peaks in ultraviolet region (10eV-30eV), low reflection (5-7%), and high optical conductivity. In addition to the alluring optoelectronic features, the compounds under study have figure of merit being close to unity so these are also promising for thermoelectric applications.

preprint2022arXiv

Low Born effective Charges, High Covalency and Strong Optical Activity in X32+X_3^{2+}Bi3−^{3-}N3−^{3-} (XX=Ca,Sr,Ba) inverseinverse-perovskites

We compute for the first time a complete charge analysis (Bader and Born effective) on X32+X_3^{2+}Bi3−^{3-}N3−^{3-} (XX=Ca,Sr,Ba). The crystals show a great electron sharing with little possibility of ferroelectricity. InverseInverse perovskites have been a center of attraction in the recent years and not much is known on the systems under this study. This research addressed some key missing components and decomponents like the hardness and optical spectrum in X32+X_3^{2+}Bi3−^{3-}N3−^{3-} (XX=Ca,Sr,Ba). The computed lattices slightly deviated from the parent perovskites indicating a future interfacing under a proper substrate. We also found out that all the crystals under this study were semiconducting with direct band gaps but plastic in nature due to strong covalency. The optical spectrum revealed very strong activity in these crystals in the ultraviolet regime. The information herein will definitely guide the experimentalist in fabrication of these materials for novel functionalities.

preprint2020arXiv

Ab initio study on Quasi-Binary Acetonitriletriide Sr3_3[C2_2N]2_2

We report using density functional theory (DFT), the ground-state properties of the recently synthesized and characterized Sr3_3[C2_2N]2_2 crystal. The nearly colorless, centrosymmetric Sr3_3[C2_2N]2_2 crystallizes in a monoclinic unit cell with a P21/cP2_1/c space group (No.14) and many of its properties remain unknown basing on the fact that it's a latecomer in the field. The goal of this study is to fill this information gap through a theoretical prediction. The calculated structural properties were comparable to those obtained by an experimental group led by Clark and co-workers thus giving us extra confidence in the accuracy of our DFT computations on Sr3_3[C2_2N]2_2. We employed the same approach in calculating mechanical and dynamical stabilities together with the electronic density of states of Sr3_3[C2_2N]2_2. No imaginary phonon modes were observed and thus implying dynamical stability. The thirteen elastic constants calculated passed the stability criteria of a monoclinic system. From the computed Poisson's ratio (ηη=0.27) and G/B=0.54, our calculations predict Sr3_3[C2_2N]2_2 being brittle and not able to withstand high-pressure applications. To analyze the chemical bonding mechanism, the corresponding total density of states (TDOS) and partial DOS were plotted. The top of the valence band (VB) mainly consists of C 2p states N 2p, N 2s and a slight admixture of Sr 5s states. The bottom of the conduction band (CB) shows a strong hybridization between C 2p, N 2p, N 2s, and Sr 5s states, yielding a bandwidth of 7.18 eV in the entire conduction band. We were able to obtain a tunable electronic gap of 2.65 eV in Sr3_3[C2_2N]2_2. The authors herein note that Sr3_3[C2_2N]2_2 falls in an unknown family of pseudonitrides that may possess novel physical and chemical properties.

preprint2020arXiv

Comparison of band-fitting and Wannier-based model construction for WSe2_2

Transition metal dichalcogenide materials MX2(M=Mo,W;X=S,Se)MX_2 (M=Mo,W;X=S,Se) are being thoroughly studied due to their novel two-dimensional structure, that is associated with exceptional optical and transport properties. From a computational point of view, Density Functional Theory simulations perform very well in these systems and are an indispensable tool to predict and complement experimental results. However, due to the time and length scales where even the most efficient DFT implementations can reach today, this methodology suffers of stringent limitations to deal with finite temperature simulations or electron-lattice coupling when studying excitation states: the unit cells required to study, for instance, systems with thermal fluctuations or large polarons would require a large computational power. Multi-scale techniques, like the recently proposed Second Principles Density Functional Theory, can go beyond these limitations but require the construction of tight-binding models for the systems under investigation. In this work, we compare two such methods to construct the bands of WSe2_2. In particular, we compare the result of (i) Wannier-based model construction with (ii) the band fitting method of Liu and co-workers where the top of the valence band and the bottom of the conduction band are modeled by three bands symmetrized to have mainly Tungsten dz2d_{z^2}, dxyd_{xy} and dx2−y2d_{x^2-y^2} character. Our results emphasize the differences between these two approaches and how band-fitting model construction leads to an overestimation of the localization of the real-space basis in a tight-binding representation.

preprint2020arXiv

First-principles study of two-dimensional electron and hole gases at the head-to-head and tail-to-tail 180∘^\circ domain walls in PbTiO3_{3} ferroelectric thin films

We study from first-principles the structural and electronic properties of head-to-head (HH) and tail-to-tail (TT) 180∘^\circ domain walls in isolated free-standing PbTiO3_{3} slabs. For sufficiently thick domains (nn = 16 unit cells of PbTiO3_{3}), a transfer of charge from the free surfaces to the domain walls to form localized electron (in the HH) and hole (in the TT) gases in order to screen the bound polarization charges is observed. The electrostatic driving force behind this electronic reconstruction is clearly visible from the perfect match between the smoothed free charge densities and the bound charge distribution, computed from a finite difference of the polarization profile obtained after the relaxation of the lattice degrees of freedom. The domain wall widths, of around six unit cells, are larger than in the conventional 180∘^\circ neutral configurations. Since no oxygen vacancies, defects or dopant atoms are introduced in our simulations, all the previous physical quantities are the intrinsic limits of the system. Our results support the existence of an extra source of charge at the domains walls to explain the enhancement of the conductivity observed in some domains walls of prototypical, insulating in bulk, perovskite oxides.

preprint2020arXiv

Interplay of lattice distortion and bands near the Fermi level in AATiO3_3 (AA=Ca, Sr, Ba)

The structural and electronic properties of AATiO3_3 (AA=Ca, Sr, Ba) have been investigated under strain-free situation and with realistic constraints using first-principles calculations. We endeavored to find out the interplay between mild lattice distortions and bandgap in three AATiO3_3 family members that has remained skeptical to date. We found out that the electronic structure was particularly sensitive to strains (compressive or tensile) as expected in most materials science studies. Our results indicate that under mild strains; the bandgap (EgapE_{gap}), increased under compression and decreased under tension. In all the three materials, the bandgap and the lattice parameter (aa) were found to relate as Egap∝1axE_{gap}\propto \frac{1}{a^x} for mild distortions with 2.19<x<3.12.19<x<3.1. All these changes are attributed to the interplay of electrostatics and covalency in these crystals. This work acts as a yardstick on bandgap engineering to achieve desired properties in these titanates for feasible future applications.

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