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Shan Qiao

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Published work

8 published item(s)

preprint2026arXiv

Observation of spin-valley locked nodal lines in a quasi-2D altermagnet

The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples include ferromagnetic Weyl semimetals and antiferromagnetic axion insulators. Recently, altermagnets(AMs) have been identified as a distinct spin-splitting class of collinear antiferromagnets(AFMs), characterized by crystal symmetry that connects magnetic sublattices in real space and enforces C-paired spin-momentum locking in reciprocal space. These materials combine the advantages of nonrelativistic spin-polarization akin to FMs and vanished net-magnetization as AFMs, making them highly promising for spintronic applications. Furthermore, they introduce nontrivial spin-momentum locking spin texture as an additional degree of freedom for realizing novel quantum phases. In this work, we report the discovery of a new type of spin-valley-locked nodal line phase in the layered AM Rb-intercalated V{_2}Te{_2}O. By combining high-resolution spin and angle-resolved photoemission spectroscopy with first-principles calculations, we observe the coexistence of both spinless and spinful nodal lines near the Fermi level. Remarkably, the spinful nodal lines exhibit uniform spin polarization within each valley, while displaying opposite spin polarizations across symmetry-paired valleys-a unique feature we term spin-valley-locked nodal lines, which is exclusive to AMs. Direct measurements of out-of-plane band dispersion using a side-cleaving technique reveal the two-dimensional nature of these nodal lines. Our findings not only unveil a previously unexplored topological phase in AMs where valley-locked spin as an additional quantum character but also establish RbV{_2}Te{_2}O as a promising platform for spintronics, valleytronics, and moire-engineered quantum devices.

preprint2021arXiv

High-resolution ARPES endstation for in-situ electronic structure investigations at SSRF

Angle-resolved photoemission spectroscopy (ARPES) is one of the most powerful experimental techniques in condensed matter physics. Synchrotron ARPES, which uses photons with high flux and continuously tunable energy, has become particularly important. However, an excellent synchrotron ARPES system must have features such as a small beam spot, super-high energy resolution, and a user-friendly operation interface. A synchrotron beamline and an endstation (BL03U) were designed and constructed at the Shanghai Synchrotron Radiation Facility. The beam spot size at the sample position is 7.5 (V) $μ$m $\times$ 67 (H) $μ$m, and the fundamental photon range is 7-165 eV; the ARPES system enables photoemission with an energy resolution of 2.67 meV@21.2 eV. In addition, the ARPES system of this endstation is equipped with a six-axis cryogenic sample manipulator (the lowest temperature is 7 K) and is integrated with an oxide molecular beam epitaxy system and a scanning tunneling microscope, which can provide an advanced platform for in-situ characterization of the fine electronic structure of condensed matter.

preprint2016arXiv

Lithium-ion-based solid electrolyte tuning of the carrier density in graphene

We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate.It can induce a change in the carrier density as large as 1*10^14/cm^2, which is much larger than that induced with oxide-film dielectrics, and it is comparable with that induced by liquid electrolytes. Gate modulation of the carrier density is still visible at 150 K, which is lower than the glass transition temperature of most liquid gating electrolytes.

preprint2015arXiv

Multi-channel exchange-scattering spin polarimetry

Electron spin takes critical role in almost all novel phenomena discovered in modern condensed matter physics (High-temperature superconductivity, Kondo effect, Giant Magnetoresistance, topological insulator, quantum anomalous Hall effect, etc.). However, the measurements for electron spin is of poor quality which blocks the development of material sciences because of the low efficiency of spin polarimeter. Here we show an imaging type exchange-scattering spin polarimeter with 5 orders more efficiency compared with a classical Mott polarimeter. As a demonstration, the fine spin structure of electronic states in bismuth (111) is investigated, showing the strong Rashba type spin splitting behavior in both bulk and surface states. This improvement pave the way to study novel spin related phenomena with unprecedented accuracy.

preprint2015arXiv

Ultrafast electron dynamics at the Dirac node of the topological insulator Sb$_2$Te$_3$

Topological insulators (TIs) are a new quantum state of matter. Their surfaces and interfaces act as a topological boundary to generate massless Dirac fermions with spin-helical textures. Investigation of fermion dynamics near the Dirac point is crucial for the future development of spintronic devices incorporating topological insulators. However, research so far has been unsatisfactory because of a substantial overlap with the bulk valence band and a lack of a completely unoccupied Dirac point (DP). Here, we explore the surface Dirac fermion dynamics in the TI Sb$_2$Te$_3$ by time- and angle-resolved photoemission spectroscopy (TrARPES). Sb$_2$Te$_3$ has a DP located completely above the Fermi energy ($E_F$) with an in-gap DP. The excited electrons in the upper Dirac cone stay longer than those below the Dirac point to form an inverted population. This was attributed to a reduced density of states (DOS) near the DP .

preprint2014arXiv

The design of a high flux VUV beamline for low energy photons

A VUV beamline at SSRF for ARPES measurements are designed. To increase the resolution and bulk sensitivity, the photon energy as low as 7 eV is desired. Because the reflectivity for p-polarized photons strongly decreases when the photon energy is below 30 eV, the design of high flux beamline for low energy VUV photons is a challenge. This work shows a variable including angle VLPGM with varied grating depth (VGD) which can achieve both high resolution and high flux with broad energy coverage.

preprint2014arXiv

The design of a multi-channel spin polarimeter

All commercial electron spin polarimeters work in single channel mode, which is the bottleneck of researches by spin-resolved photoelectron spectroscopy. By adopting the time inversion antisymmetry of magnetic field, we developed a multichannel spin polarimeter based on normal incident VLEED. The key point to achieve the multi-channel measurements is the spatial resolution of the electron optics. The test of the electron optics shows that the designed spatial resolution can be achieved and an image type spin polarimeter with 100 times 100, totally ten thousand channels is possible to be realized.

preprint2012arXiv

Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistances (Rxy) in highly-doped n-type Bi2Se3 with bulk carrier concentrations of few 10^19 cm^-3. Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/Rxy is found to scale with the sample thickness, and average ~e2/h per quintuple layer (QL). We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. Besides revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.