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Researcher profile

Seymur Cahangirov

Seymur Cahangirov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-ph

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Published work

5 published item(s)

preprint2014arXiv

The atomic structure of the $\sqrt{3} \times \sqrt{3}$ phase of silicene on Ag(111)

The growth of the $\sqrt{3} \times \sqrt{3}$ reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here by first-principles calculations we show that $\sqrt{3} \times \sqrt{3}$ reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows excellent agreement with the experimentally reported lattice constant and STM image. We propose a new mechanism for explaining the spontaneous and consequential formation of $\sqrt{3} \times \sqrt{3}$ structures from $3 \times 3$ structures on Ag substrate. We show that the $\sqrt{3} \times \sqrt{3}$ reconstruction is mainly determined by the interaction between Si atoms and have weak influence from Ag substrate. The proposed mechanism opens the path to understanding of multilayer silicon.

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preprint2013arXiv

On the electronic structure of silicene on Ag substrate: strong hybridization effects

The electronic structure of the recently synthesised (3x3) reconstructed silicene on (4x4) Ag(111) is investigated by first-principles calculations. New states emerge due to the strong hybridization between silicene and Ag. Analyzing the nature and composition of these hybridized states, we show that i) it is possible to clearly distinguish them from states coming from the Dirac cone of free-standing silicene or from the sp-bands of bulk Ag and ii) assign their contribution to the description of the linearly dispersing band observed in photoemission. Furthermore, we show that silicene atoms contribute to the Fermi level, which leads to similar STM patterns as observed below or above the Fermi level. Our findings are crucial for the proper interpretation of experimental observations.

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preprint2010arXiv

Confined states in multiple quantum well structures of Si$_{n}$Ge$_{n}$ nanowire superlattices

Mechanical properties, atomic and energy band structures of bare and hydrogen passivated Si$_{n}$Ge$_{n}$ nanowire superlattices have been investigated by using first-principles pseudopotential plane wave method. Undoped, tetrahedral Si and Ge nanowire segments join pseudomorphically and can form superlattice with atomically sharp interface. We found that Si$_{n}$ nanowires are stiffer than Ge$_{n}$ nanowires. Hydrogen passivation makes these nanowires and Si$_{n}$Ge$_{n}$ nanowire superlattice even more stiff. Upon heterostructure formation, superlattice electronic states form subbands in momentum space. Band lineups of Si and Ge zones result in multiple quantum wells, where specific states at the band edges and in band continua are confined. The electronic structure of the nanowire superlattice depends on the length and cross section geometry of constituent Si and Ge segments. Since bare Si and Ge nanowires are metallic and the band gaps of hydrogenated ones varies with the diameter, Si$_{n}$Ge$_{n}$ superlattices offer numerous alternatives for multiple quantum well devices with their leads made from the constituent metallic nanowires.

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preprint2009arXiv

Confinement of electrons in size modulated silicon nanowires

Based on first-principles calculations we showed that superlattices of periodically repeated junctions of hydrogen saturated silicon nanowire segments having different lengths and diameters form multiple quantum well structures. The band gap of the superlattice is modulated in real space as its diameter does and results in a band gap in momentum space which is different from constituent nanowires. Specific electronic states can be confined in either narrow or wide regions of superlattice. The type of the band lineup and hence the offsets of valence and conduction bands depend on the orientation of the superlattice as well as on the diameters of the constituent segments. Effects of the SiH vacancy and substitutional impurities on the electronic and magnetic properties have been investigated by carrying out spin-polarized calculations. Substitutional impurities with localized states near band edges can make modulation doping possible. Stability of the superlattice structure was examined by ab initio molecular dynamics calculations at high temperatures.

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preprint2009arXiv

Two and one-dimensional honeycomb structures of silicon and germanium

Based on first-principles calculations of structure optimization, phonon modes and finite temperature molecular dynamics, we predict that silicon and germanium have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, they are ambipolar and their charge carriers can behave like a massless Dirac fermions due to their pi- and pi*-bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.

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