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Salim Ciraci

Salim Ciraci contributes to research discovery and scholarly infrastructure.

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Published work

10 published item(s)

preprint2014arXiv

The atomic structure of the $\sqrt{3} \times \sqrt{3}$ phase of silicene on Ag(111)

The growth of the $\sqrt{3} \times \sqrt{3}$ reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here by first-principles calculations we show that $\sqrt{3} \times \sqrt{3}$ reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows excellent agreement with the experimentally reported lattice constant and STM image. We propose a new mechanism for explaining the spontaneous and consequential formation of $\sqrt{3} \times \sqrt{3}$ structures from $3 \times 3$ structures on Ag substrate. We show that the $\sqrt{3} \times \sqrt{3}$ reconstruction is mainly determined by the interaction between Si atoms and have weak influence from Ag substrate. The proposed mechanism opens the path to understanding of multilayer silicon.

preprint2012arXiv

Chlorine Adsorption on Graphene: Chlorographene

We perform first-principles structure optimization, phonon frequency and finite temperature molecular dynamics calculations based on density functional theory to study the interaction of chlorine atoms with graphene predicting the existence of possible chlorinated graphene derivatives. The bonding of a single chlorine atom is ionic through the transfer of charge from graphene to chlorine adatom and induces negligible local distortion in the underlying planar graphene. Different from hydrogen and fluorine adatoms, the migration of a single chlorine adatom on the surface of perfect graphene takes place almost without barrier. However, the decoration of one surface of graphene with Cl adatoms leading to various conformations cannot sustain due to strong Cl-Cl interaction resulting in the desorption through the formation of Cl$_2$ molecules. On the contrary, the fully chlorinated graphene, chlorographene CCl, where single chlorine atoms are bonded alternatingly to each carbon atom from different sides of graphene with $sp^3$-type covalent bonds, is buckled. We found that this structure is stable and is a direct band gap semiconductor, whose band gap can be tuned by applied uniform strain. Calculated phonon dispersion relation and four Raman-active modes of chlorographene are discussed.

preprint2011arXiv

Graphene Nanomeshes: Existence of Defect-Induced Dirac Fermions on Graphene Host Matrix

Motivated by the state of the art method for fabricating high density periodic nanoscale defects in graphene, the structural, mechanical and electronic properties of defect-patterned graphene nanomeshes including diverse morphologies of adatoms and holes are investigated by means of first-principles calculations within density functional theory. It is found that various patterns of adatom groups yield metallic or semimetallic, even semiconducting behavior and specific patterns can be in a magnetic state. Even though the patterns of single adatoms dramatically alter the electronic structure of graphene, adatom groups of specific symmetry can maintain the Dirac fermion behavior. Nanoholes forming nanomesh are also investigated. Depending on the interplay between the repeat periodicity and the geometry of the hole, the nanomesh can be in different states ranging from metallic to semiconducting including semimetallic state with the bands crossing linearly at the Fermi level. We showed that forming periodically repeating superstructures in graphene matrix can develop a promising technique to engineer nanomaterials with desired electronic and magnetic properties.

preprint2010arXiv

Confined states in multiple quantum well structures of Si$_{n}$Ge$_{n}$ nanowire superlattices

Mechanical properties, atomic and energy band structures of bare and hydrogen passivated Si$_{n}$Ge$_{n}$ nanowire superlattices have been investigated by using first-principles pseudopotential plane wave method. Undoped, tetrahedral Si and Ge nanowire segments join pseudomorphically and can form superlattice with atomically sharp interface. We found that Si$_{n}$ nanowires are stiffer than Ge$_{n}$ nanowires. Hydrogen passivation makes these nanowires and Si$_{n}$Ge$_{n}$ nanowire superlattice even more stiff. Upon heterostructure formation, superlattice electronic states form subbands in momentum space. Band lineups of Si and Ge zones result in multiple quantum wells, where specific states at the band edges and in band continua are confined. The electronic structure of the nanowire superlattice depends on the length and cross section geometry of constituent Si and Ge segments. Since bare Si and Ge nanowires are metallic and the band gaps of hydrogenated ones varies with the diameter, Si$_{n}$Ge$_{n}$ superlattices offer numerous alternatives for multiple quantum well devices with their leads made from the constituent metallic nanowires.

preprint2010arXiv

Elastic and plastic deformation of graphene, silicene, and boron nitride honeycomb nanoribbons under uniaxial tension: A first-principles density-functional theory study

This study of elastic and plastic deformation of graphene, silicene, and boron nitride (BN) honeycomb nanoribbons under uniaxial tension determines their elastic constants and reveals interesting features. In the course of stretching in the elastic range, the electronic and magnetic properties can be strongly modified. In particular, it is shown that the band gap of a specific armchair nanoribbon is closed under strain and highest valance and lowest conduction bands are linearized. This way, the massless Dirac fermion behavior can be attained even in a semiconducting nanoribbon. Under plastic deformation, the honeycomb structure changes irreversibly and offers a number of new structures and functionalities. Cagelike structures, even suspended atomic chains can be derived between two honeycomb flakes. Present work elaborates on the recent experiments [C. Jin, H. Lan, L. Peng, K. Suenaga, and S. Iijima, Phys. Rev. Lett. 102, 205501 (2009)] deriving carbon chains from graphene. Furthermore, the similar formations of atomic chains from BN and Si nanoribbons are predicted.

preprint2010arXiv

Graphane Nanoribbons: A Theoretical Study

In this study, we investigate the electronic and magnetic properties of graphane nanoribbons. We find that zigzag and armchair graphane nanoribbons with H-passivated edges are nonmagnetic semiconductors. While bare armchair ribbons are also nonmagnetic, adjacent dangling bonds of bare zigzag ribbons have antiferromagnetic ordering at the same edge. Band gaps of the H-passivated zigzag and armchair nanoribbons exponentially depend on their width. Detailed analysis of adsorption of C, O, Si, Pt, Ti, V and Fe atoms on the graphane ribbon surface reveal that functionalization of graphane ribbons is possible via these adatoms. It is found that C, O, V and Pt atoms have tendency to replace H atoms of graphane. We showed that significant spin polarizations in graphane can be achieved through creation of domains of H-vacancies and CH-divacancies.

preprint2010arXiv

Spintronic Properties of Zigzag-Edged Triangular Graphene Flakes

We investigate quantum transport properties of triangular graphene flakes with zigzag edges by using first principles calculations. Triangular graphene flakes have large magnetic moments which vary with the number of hydrogen atoms terminating its edge atoms and scale with its size. Electronic transmission and current-voltage characteristics of these flakes, when contacted with metallic electrodes, reveal spin valve and remarkable rectification features. The transition from ferromagnetic to antiferromagnetic state under bias voltage can, however, terminate the spin polarizing effects for specific flakes. Geometry and size dependent transport properties of graphene flakes may be crucial for spintronic nanodevice applications.

preprint2009arXiv

Confinement of electrons in size modulated silicon nanowires

Based on first-principles calculations we showed that superlattices of periodically repeated junctions of hydrogen saturated silicon nanowire segments having different lengths and diameters form multiple quantum well structures. The band gap of the superlattice is modulated in real space as its diameter does and results in a band gap in momentum space which is different from constituent nanowires. Specific electronic states can be confined in either narrow or wide regions of superlattice. The type of the band lineup and hence the offsets of valence and conduction bands depend on the orientation of the superlattice as well as on the diameters of the constituent segments. Effects of the SiH vacancy and substitutional impurities on the electronic and magnetic properties have been investigated by carrying out spin-polarized calculations. Substitutional impurities with localized states near band edges can make modulation doping possible. Stability of the superlattice structure was examined by ab initio molecular dynamics calculations at high temperatures.

preprint2009arXiv

Magnetization of Graphane by Dehydrogenation

Each single hydrogen vacancy created at the surface of graphane gives rise to a local unpaired spin. For domains of hydrogen vacancies the situation is, however complex and depends on the size and geometry of domains, as well as whether the domains are single- or double-sided. In single-sided domains, hydrogen atoms at the other side are relocated to pair the spins of adjacent carbon atoms by forming pi-bonds. Owing to the different characters of exchange coupling in different ranges and interplay between unpaired spin and the binding geometry of hydrogen, vacancy domains can attain sizable net magnetic moments. Our results based on the first-principles calculations suggest that the size and ordering of magnetic moments of hydrogen vacancy domains with thin walls can be used for future data storage and spintronics applications.

preprint2009arXiv

Two and one-dimensional honeycomb structures of silicon and germanium

Based on first-principles calculations of structure optimization, phonon modes and finite temperature molecular dynamics, we predict that silicon and germanium have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, they are ambipolar and their charge carriers can behave like a massless Dirac fermions due to their pi- and pi*-bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.