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Researcher profile

Peizhe Tang

Peizhe Tang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2022arXiv

Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2

The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and resulting electric field induce a Rashba-type spin-orbit field (SOF), which has been demonstrated to generate spin-orbit torque for data storage applications. In this study, we found that spin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 at room temperature, which manifests as a negative magnetoresistance in the vertical spin valve. Quantum transmission calculations based on an effective model near the K valley of WSe2 confirm the precessional spin transport of carriers under the giant SOF, which is estimated to be 650 T. In particular, the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable with the layer number and stacking phase of WSe2 as well as the gate voltage, which provides a novel strategy for spin manipulation and can benefit the development of ultralow-power spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Unconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide

Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter physics and material science. In low-dimensional materials, unique electronic properties for these correlated states could significantly affect their optical properties. Herein, combining photoluminescence, optical reflection measurements and theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP$_2$), in which the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus$-$phosphorus chains and holes extended in two-dimensional SiP$_2$ layers. The excitonic state and the emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Within the $GW$ plus Bethe$-$Salpeter equation calculations and solving the generalized Holstein model non-perturbatively, we confirm that the observed sideband feature results from the correlated interaction between excitons and optical phonons. Such a layered material provides a new platform to study excitonic physics and many-particle effects.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets

Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi$_2$Te$_4$ thin films. Under an out-of-plane electric field that breaks $\mathcal{PT}$ symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi$_2$Te$_4$ thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototype for future AFM spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large-gap quantum spin Hall insulators in tin films

The search of large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γpoint, similar to the case of HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.

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