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Researcher profile

Seung-Young Park

Seung-Young Park contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2014arXiv

Ferromagnetic resonance spin pumping in CoFeB with highly resistive non-magnetic electrodes

The relative contribution of spin pumping and spin rectification from the ferromagnetic resonance of CoFeB/non-magnetic bilayers was investigated as a function of non-magnetic electrode resistance. Samples with highly resistive electrodes of Ta or Ti exhibit a stronger spin rectification signal, which may result in over-(or under-)estimation of the spin Hall angle of the materials, while those with low resistive electrodes of Pt or Pd show the domination of the inverse spin Hall effect from spin pumping. By comparison with samples of single FM layer and an inverted structure, we provide a proper analysis method to extract spin pumping contribution.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical Investigation of the Oblique Hanle Effect in Ferromagnet/Oxide/Semiconductor Contacts

We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle (θ) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, at moderate magnetic fields, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos^2(θ) irrespective of the bias current and temperature. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical oblique Hanle effect. At high magnetic fields where the magnetization of CoFe is significantly tilted from the film plane to the magnetic field direction, we find that the observed angular dependence of voltage signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts are well explained by the OHE, considering the misalignment angle between the external magnetic field and the magnetization of CoFe.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermal spin injection and accumulation in CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling

We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is detected by means of the Hanle effect for both polarities of the temperature gradient across the tunnel contact. The magnitude of the thermal spin signal scales linearly with the heating power and its sign is reversed as we invert the temperature gradient, demonstrating the major features of SST and thermal spin accumulation. We observe that, for the Si (CoFe) heating, the thermal spin signal induced by SST corresponds to the majority (minority) spin accumulation in the Si. Based on a quantitative comparison of thermal and electrical spin signals, it is noted that the thermal spin injection through SST can be a viable approach for the efficient injection of spin accumulation

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. At room temperature, a large ISD is observed in the CoFe/MgO/Si contact, but a small ISD in the CoFe/MgO/Ge contact. The ISD of the CoFe/MgO/Ge contact has been substantially increased at low temperature. These results can be ascribed to the difference of spin relaxation in host SCs. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 kΩ μm^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effect of spin transfer torque on the magnetic domain wall ferromagnetic resonance frequency in the nanowires

We investigate the influence of the domain wall ferromagnetic resonance frequency on the spin transfer torque in a ferromagnetic nanowire. By employing micromagnetic simulations with the spin transfer torque, we find that the domain wall resonance frequency decreases with increasing spin polarized current density, when there is no change in the resonance frequency of the domain itself. Surprisingly, the variation of the resonance frequency is remarkable (> 1.6 GHz) with the spin transfer torque even though the domain wall is pinned. Since the presented domain wall ferromagnetic resonance study has been performed for the pinned domain wall, the contributions of extrinsic defects are excluded. It is strong advantages of the present study, since the effects of extrinsic pinning sites are inevitable in the imaging or transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Micromagnetic analysis of magnetic noise in ferromagnetic nanowires

We investigate the magnetic thermal noise in magnetic nanowires with and without a domain wall by employing micromagnetic simulations. The magnetic thermal noise due to random thermal fluctuation fields gives important physical quantities related with the magnetic susceptibility. We find that the resonance frequency of a domain wall is distinguishable from one of a magnetic domain itself. For the single domain without a domain wall, the resonance frequency is well described by the Kittel's formula considering a ferromagnetic specimen as a simple ellipsoid with demagnetizing factors for various wire widths and thicknesses. However, additional resonance frequencies from the magnetic domain wall show the different dependences of the wire width and thickness. It implies that the spins inside the domain wall have different effective fields and the spin dynamics.

0 citations0 reviewsNo code linkedOpen access