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Researcher profile

Kun-Rok Jeon

Kun-Rok Jeon contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-con

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Published work

6 published item(s)

preprint2026arXiv

Interferometric evidence of non-volatile anomalous phase shifts in exchange-spin-split Josephson supercurrent diodes

The recent realization of zero-field, polarity-reversible supercurrent rectification in proximity-magnetized Rashba-type Pt Josephson junctions (JJs) enables the development of superconducting logic circuits and cryogenic memory applications. Here, we demonstrate a non-volatile anomalous phase shift ϕ_0 directly probed via superconducting quantum interferometry, providing phase-sensitive evidence of spontaneous time-reversal symmetry breaking in these Rashba-type systems. By replacing the Pt barrier with 5d or 4d element layers exhibiting different (para-)magnetic susceptibilities, spin-orbit coupling strengths, and electronic band structures, we elucidate the role of proximity effects in governing zero-field diode behavior. Ta (W) JJs exhibit zero-field diode efficiencies of ~17% (~5%) at 2 K, which are slightly (significantly) lower than those of Pt JJs. Notably, the diode polarity in Ta and W JJs is reversed relative to Pt JJs. Combined with the large zero-field diode efficiency (~15% at 2 K) observed in highly magnetic-susceptible Pd JJs, these results show that non-volatile ϕ_0 and, consequently, zero-field diode performance can be tuned through proximity engineering of interfacial magnetic ordering and Rashba spin-orbit interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunable pure spin supercurrents and the demonstration of a superconducting spin-wave device

Recent ferromagnetic resonance experiments and theory of Pt/Nb/Ni8Fe2 proximity-coupled structures strongly suggest that spin-orbit coupling (SOC) in Pt in conjunction with a magnetic exchange field in Ni8Fe2 are the essential ingredients to generate a pure spin supercurrent channel in Nb. Here, by substituting Pt for a perpendicularly magnetized Pt/Co/Pt spin-sink, we are able to demonstrate the role of SOC, and show that pure spin supercurrent pumping efficiency across Nb is tunable by controlling the magnetization direction of Co. By inserting a Cu spacer with weak SOC between Nb and Pt/(Co/Pt) spin-sink, we also prove that Rashba type SOC is key for forming and transmitting pure spin supercurrents across Nb. Finally, by engineering these properties within a single multilayer structure, we demonstrate a prototype superconducting spin-wave (SW) device in which lateral SW propagation is gateable via the opening or closing of a vertical pure spin supercurrent channel in Nb.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical Investigation of the Oblique Hanle Effect in Ferromagnet/Oxide/Semiconductor Contacts

We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle (θ) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, at moderate magnetic fields, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos^2(θ) irrespective of the bias current and temperature. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical oblique Hanle effect. At high magnetic fields where the magnetization of CoFe is significantly tilted from the film plane to the magnetic field direction, we find that the observed angular dependence of voltage signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts are well explained by the OHE, considering the misalignment angle between the external magnetic field and the magnetization of CoFe.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermal spin injection and accumulation in CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling

We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is detected by means of the Hanle effect for both polarities of the temperature gradient across the tunnel contact. The magnitude of the thermal spin signal scales linearly with the heating power and its sign is reversed as we invert the temperature gradient, demonstrating the major features of SST and thermal spin accumulation. We observe that, for the Si (CoFe) heating, the thermal spin signal induced by SST corresponds to the majority (minority) spin accumulation in the Si. Based on a quantitative comparison of thermal and electrical spin signals, it is noted that the thermal spin injection through SST can be a viable approach for the efficient injection of spin accumulation

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. At room temperature, a large ISD is observed in the CoFe/MgO/Si contact, but a small ISD in the CoFe/MgO/Ge contact. The ISD of the CoFe/MgO/Ge contact has been substantially increased at low temperature. These results can be ascribed to the difference of spin relaxation in host SCs. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 kΩ μm^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.

0 citations0 reviewsNo code linkedOpen access