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Researcher profile

Byoung-Chul Min

Byoung-Chul Min contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2016arXiv

Wide-Range Probing of Dzyaloshinskii-Moriya Interaction

Dzyaloshinskii-Moriya interaction (DMI) in magnetic objects is of enormous interest, because it generates a built-in chirality of magnetic domain walls (DWs) and topologically-protected skyrmions for efficient motion driven by spin-orbit torques. Because of its importance for perspective applications and academic curiosities, many experimental efforts have been devoted to DMI investigation. However, current experimental probing techniques cover only limited ranges of the DMI with specific sample requirements, and there are no versatile techniques covering a wide range of DMI. Here, we present a unique experimental scheme to quantify DMI over a wide range based on the angular dependence of asymmetric DW motion. It can determine DMI even larger than the maximum magnetic field strength, demonstrating that various strengths of DMI can be quantified using a single measurement setup. This scheme provides a standard technique over a wide range of DMI, which is essential to DMI-related emerging fields in nanotechnology.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetic Bubblecade Memory

Unidirectional motion of magnetic domain walls is the key concept underlying next-generation domain-wall-mediated memory and logic devices. Such motion has been achieved either by injecting large electric currents into nanowires or by employing domain-wall tension induced by sophisticated structural modulation. Herein, we demonstrate a new scheme without any current injection or structural modulation. This scheme utilizes the recently discovered chiral domain walls, which exhibit asymmetry in their speed with respect to magnetic fields. Because of this asymmetry, an alternating magnetic field results in the coherent motion of the domain walls in one direction. Such coherent unidirectional motion is achieved even for an array of magnetic bubble domains, enabling the design of a new device prototype-magnetic bubblecade memory-with two-dimensional data-storage capability.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Thermally activated switching of perpendicular magnet by spin-orbit spin torque

We theoretically investigate the threshold current for thermally activated switching of a perpendicular magnet by spin-orbit spin torque. Based on the Fokker-Planck equation, we obtain an analytic expression of the switching current, in agreement with numerical result. We find that thermal energy barrier exhibits a quasi-linear dependence on the current, resulting in an almost linear dependence of switching current on the log-scaled current pulse-width even below 10 ns. This is in stark contrast to standard spin torque switching, where thermal energy barrier has a quadratic dependence on the current and the switching current rapidly increases at short pulses. Our results will serve as a guideline to design and interpret switching experiments based on spin-orbit spin torque

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical Investigation of the Oblique Hanle Effect in Ferromagnet/Oxide/Semiconductor Contacts

We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle (θ) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, at moderate magnetic fields, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos^2(θ) irrespective of the bias current and temperature. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical oblique Hanle effect. At high magnetic fields where the magnetization of CoFe is significantly tilted from the film plane to the magnetic field direction, we find that the observed angular dependence of voltage signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts are well explained by the OHE, considering the misalignment angle between the external magnetic field and the magnetization of CoFe.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermal spin injection and accumulation in CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling

We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is detected by means of the Hanle effect for both polarities of the temperature gradient across the tunnel contact. The magnitude of the thermal spin signal scales linearly with the heating power and its sign is reversed as we invert the temperature gradient, demonstrating the major features of SST and thermal spin accumulation. We observe that, for the Si (CoFe) heating, the thermal spin signal induced by SST corresponds to the majority (minority) spin accumulation in the Si. Based on a quantitative comparison of thermal and electrical spin signals, it is noted that the thermal spin injection through SST can be a viable approach for the efficient injection of spin accumulation

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping constant, and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. This expression can be used to determine the physical quantities associated with spin Hall effect, and to design relevant magnetic devices based on the switching of perpendicular magnetic layers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. At room temperature, a large ISD is observed in the CoFe/MgO/Si contact, but a small ISD in the CoFe/MgO/Ge contact. The ISD of the CoFe/MgO/Ge contact has been substantially increased at low temperature. These results can be ascribed to the difference of spin relaxation in host SCs. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 kΩ μm^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.

0 citations0 reviewsNo code linkedOpen access