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Seth R. Bank

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cond-mat.mes-hall physics.optics cond-mat.mtrl-sci Information Theory math.IT physics.app-ph quant-ph

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preprint2020arXiv

Enhanced Room Temperature Infrared LEDs using Monolithically Integrated Plasmonic Materials

Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode (LED), leading to a ~5.6 x enhancement over an otherwise identical non-plasmonic control sample. Devices exhibited optical powers comparable, and temperature performance far superior, to commercially-available devices.

preprint2015arXiv

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector, and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field induced intervalley scattering resulting in a reduced carrier mobility thereby damping the plasmonic response. We demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast THz optics and for passive protection of sensitive electromagnetic devices.

preprint2014arXiv

Electronic and optical properties of GaSb:N from first principles

GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a first principles, density functional theory study using the hybrid HSE06 exchange-correlation functional of GaSb doped with 1.6$\%$ nitrogen. To study dilute-nitrides with small band gaps, the local density approximation (LDA) is insufficient and more accurate techniques such as HSE06 are needed. We conduct a comparative study on GaAs:N, also with 1.6$\%$ nitrogen mole fraction, and find that GaSb:N has a smaller band gap and displays more band gap bowing than GaAs:N. In addition we examine the orbital character of the bands, finding the lowest conduction band to be quasi-delocalized, with a large N-$3s$ contribution. At high concentrations, the N atoms interact via the host matrix, forming a dispersive band of their own which governs optoelectronic properties and dominates band gap bowing. While this band drives the optical and electronic properties of GaSb:N, its physics is not captured by traditional models for dilute-nitrides. We thus propose that a complete theory of dilute-nitrides should incorporate orbital character examination, especially at high N concentrations.

preprint2012arXiv

Design and analysis of photonic crystal coupled cavity arrays for quantum simulation

We performed an experimental study of coupled optical cavity arrays in a photonic crystal platform. We find that the coupling between the cavities is significantly larger than the fabrication-induced disorder in the cavity frequencies. Satisfying this condition is necessary for using such cavity arrays to generate strongly correlated photons, which has potential application to the quantum simulation of many-body systems.

preprint2011arXiv

Analysis of Laser & Detector Placement in MIMO Multimode Optical Fiber Systems

Multimode fibers (MMFs) offer a cost-effective connection solution for small and medium length networks. However, data rates through multimode fibers are traditionally limited by modal dispersion. Signal processing and Multiple-Input Multiple-Output (MIMO) have been shown to be effective at combating these limitations, but device design for the specific purpose of MIMO in MMFs is still an open issue. This paper utilizes a statistical field propagation model for MMFs to aid the analysis and designs of MMF laser and detector arrays, and aims to improve data rates of the fiber. Simulations reveal that optimal device designs could possess 2-3 times the data carrying capacity of suboptimal ones.

preprint2011arXiv

Vertical Field-Effect Transistor Based on Wavefunction Extension

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

preprint2010arXiv

Virtual Scanning Tunneling Microscopy: A Local Spectroscopic Probe of 2D Electron Systems

We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a charged metal tip to induce electrons to tunnel locally, directly below the tip, from a "probe" 2DES to a "subject" 2DES of interest. We test this concept with large-area (non-scanning) tunneling measurements, and predict a high spatial resolution and spectroscopic capability, with minimal influence on the physics in the subject 2DES.

preprint2007arXiv

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding InAs/GaAs quantum dots (QDs) is studied. Using minority/majority carrier injection, ballistic electron emission spectroscopy and its related hot-carrier scattering spectroscopy measures barrier heights of a buried AlxGa1-xAs layer in conduction band and valence band respectively, the band gap of Al0.4Ga0.6As is therefore determined as 2.037 +/- 0.009 eV at 9 K. Under forward collector bias, interband electroluminescence is induced by the injection of minority carriers with sub-bandgap kinetic energies. Three emission peaks from InAs QDs, InAs wetting layer, and GaAs are observed in concert with minority carrier injection.