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Researcher profile

David Goldhaber-Gordon

David Goldhaber-Gordon contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.ins-det

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Published work

9 published item(s)

preprint2022arXiv

Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards

Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena like composite fermions, charge density waves, and topological properties [1-2]. New materials, like magnetically doped topological insulators (MTIs), offer access to the quantum anomalous Hall effect, which in its ideal form, could become a future resistance standard needing only a small permanent magnet to activate a quantized resistance value [3-5]. Furthermore, these devices could operate at zero-field for measurements, making the dissemination of the ohm more economical and portable. Here we present results on precision measurements of the h/e2 quantized plateau of Cr-Doped (BixSb1-x)2Te3 and give them context by comparing them to modern graphene-based resistance standards. Ultimately, MTI-based devices could be combined in a single system with magnetic-field-averse Josephson voltage standards to obtain an alternative quantum current standard.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate

Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly transparent ohmic contact without excessive doping. We investigate electrostatically defined quantum point contacts (QPCs) in a deep-well InAs two-dimensional electron gas. Despite the 3.3% lattice mismatch between the InAs quantum well and the InP substrate, we report clean QPCs with up to eight pronounced quantized conductance plateaus at zero magnetic field. Source-drain dc bias spectroscopy reveals a harmonic confinement potential with a nearly $5$ meV subband spacing. We find a many-body exchange interaction enhancement for the out-of-plane $g$ factor $|g_{\perp}^*| = 27 \pm 1$, whereas the in-plane $g$ factor is isotropic $|g^*_{x}| = |g^*_{y}| = 12 \pm 2$, close to the bulk value for InAs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Feedback Lock-in: A versatile multi-terminal measurement system for electrical transport devices

We present the design and implementation of a measurement system that enables parallel drive and detection of small currents and voltages at numerous electrical contacts to a multi-terminal electrical device. This system, which we term a feedback lock-in, combines digital control-loop feedback with software-defined lock-in measurements to dynamically source currents and measure small, pre-amplified potentials. The effective input impedance of each current/voltage probe can be set via software, permitting any given contact to behave as an open-circuit voltage lead or as a virtually grounded current source/sink. This enables programmatic switching of measurement configurations and permits measurement of currents at multiple drain contacts without the use of current preamplifiers. Our 32-channel implementation relies on commercially available digital input/output boards, home-built voltage preamplifiers, and custom open-source software. With our feedback lock-in, we demonstrate differential measurement sensitivity comparable to a widely used commercially available lock-in amplifier and perform efficient multi-terminal electrical transport measurements on twisted bilayer graphene and $SrTiO_3$ quantum point contacts. The feedback lock-in also enables a new style of current-biased measurement which we demonstrate on a ballistic graphene device.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ionic liquid gating of SrTiO$_3$ lamellas fabricated with a focused ion beam

In this work, we combine two previously-incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for this integration is nanometer-scale surface damage inherent to any FIB-based fabrication. We address this by using a sacrificial protective layer to preserve a selected pristine surface. The test case presented here is accumulation of 2D carriers by ionic liquid gating at the surface of a micron-scale SrTiO$_3$ lamella. Preservation of surface quality is reflected in superconductivity of the accumulated carriers. This technique opens new avenues for realizing electrostatic charge tuning in materials that are not available as large or exfoliatable single crystals, and for patterning the geometry of the accumulated carriers.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nanoscale electronic transparency of wafer-scale hexagonal boron nitride

Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor action. For all these applications, the perturbation on the underlying electronically active layers is critical. For example, while hBN on Cu(111) has been shown to preserve the Cu(111) surface state 2D electron gas, it was previously unknown how this varies over the sample and how it is affected by local electronic corrugation. Here, we demonstrate that the Cu(111) surface state under wafer-scale hBN is robustly homogeneous in energy and spectral weight over nanometer length scales and over atomic terraces. We contrast this with a benchmark spectral feature associated with interaction between BN atoms and the Cu surface, which varies with the Moiré pattern of the hBN/Cu(111) sample and is dependent on atomic registry. This work demonstrates that fragile 2D electron systems and interface states are largely unperturbed by local variations created by the hBN due to atomic-scale interactions with the substrate, thus providing a remarkably transparent window on low-energy electronic structure below the hBN monolayer.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Unusual magnetotransport in twisted bilayer graphene

We present transport measurements of bilayer graphene with 1.38° interlayer twist and apparent additional alignment to its hexagonal boron nitride cladding. As with other devices with twist angles substantially larger than the magic angle of 1.1°, we do not observe correlated insulating states or band reorganization. However, we do observe several highly unusual behaviors in magnetotransport. For a large range of densities around half filling of the moiré bands, magnetoresistance is large and quadratic. Over these same densities, the magnetoresistance minima corresponding to gaps between Landau levels split and bend as a function of density and field. We reproduce the same splitting and bending behavior in a simple tight-binding model of Hofstadter's butterfly on a square lattice with anisotropic hopping terms. These features appear to be a generic class of experimental manifestations of Hofstadter's butterfly and may provide insight into the emergent states of twisted bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant Orbital Magneto-electric effect and Current-driven Magnetization Switching in Twisted Bilayer Graphene

Recently, signatures of quantum anomalous Hall states with spontaneous ferromagnetism were observed in twisted bilayer graphenes (TBGs) near 3/4 filling [1, 2]. Importantly, it was demon-strated that an extremely small current can switch the direction of the magnetization. This offers the prospect of realizing low energy dissipation magnetic memories. However, the mechanism of the current-driven magnetization switching is poorly understood as the charge currents in graphene layers are generally believed to be non-magnetic. In this work, we demonstrate that, in TBGs, the twist-induced reduction of lattice symmetry allows a charge current to generate net orbital magnetization at a general filling factor through magnetoelectric effects. Substrate-induced strain and sublattice symmetry breaking further reduce the symmetry such that an out-of-plane orbital magnetization can be generated. Due to the large non-trivial Berry phase of the flat bands, the orbital magnetization of a Bloch state can be as large as tens of Bohr magnetons and therefore a small current would be sufficient to generate a large orbital magnetization. We further demonstrate how the charge current with orbital magnetization can switch the magnetization of the quantum anomalous Hall state near 3/4 filling as observed in the experiments [1, 2].

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable ferromagnetism at non-integer filling of a moiré superlattice

The flat bands resulting from moiré superlattices in magic-angle twisted bilayer graphene (MATBG) and ABC-trilayer graphene aligned with hexagonal boron nitride (ABC-TLG/hBN) have been shown to give rise to fascinating correlated electron phenomena such as correlated insulators and superconductivity. More recently, orbital magnetism associated with correlated Chern insulators was found in this class of layered structures centered at integer multiples of n0, the density corresponding to one electron per moiré superlattice unit cell. Here we report the experimental observation of ferromagnetism at fractional filling of a flat Chern band in an ABC-TLG/hBN moirésuperlattice. The ferromagnetic state exhibits prominent ferromagnetic hysteresis behavior with large anomalous Hall resistivity in a broad region of densities, centered in the valence miniband at n = -2.3 n0. This ferromagnetism depends very sensitively on the control parameters in the moiré system: not only the magnitude of the anomalous Hall signal, but also the sign of the hysteretic ferromagnetic response can be modulated by tuning the carrier density and displacement field. Our discovery of electrically tunable ferromagnetism in a moiré Chern band at non-integer filling highlights the opportunities for exploring new correlated ferromagnetic states in moiré heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunable Correlated Chern Insulator and Ferromagnetism in Trilayer Graphene/Boron Nitride Moiré Superlattice

Studies on two-dimensional electron systems in a strong magnetic field first revealed the quantum Hall (QH) effect, a topological state of matter featuring a finite Chern number (C) and chiral edge states. Haldane later theorized that Chern insulators with integer QH effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (TLG/hBN) moiré superlattice provides an attractive platform to explore Chern insulators because it features nearly flat moiré minibands with a valley-dependent electrically tunable Chern number. Here we report the experimental observation of a correlated Chern insulator in a TLG/hBN moiré superlattice. We show that reversing the direction of the applied vertical electric field switches TLG/hBN's moiré minibands between zero and finite Chern numbers, as revealed by dramatic changes in magneto-transport behavior. For topological hole minibands tuned to have a finite Chern number, we focus on 1/4 filling, corresponding to one hole per moiré unit cell. The Hall resistance is well quantized at h/2e2, i.e. C = 2, for |B| > 0.4 T. The correlated Chern insulator is ferromagnetic, exhibiting significant magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Our discovery of a C = 2 Chern insulator at zero magnetic field should open up exciting opportunities for discovering novel correlated topological states, possibly with novel topological excitations, in nearly flat and topologically nontrivial moiré minibands.

0 citations0 reviewsNo code linkedOpen access