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Sergio C. de la Barrera

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Published work

4 published item(s)

preprint2021arXiv

Cascade of isospin phase transitions in Bernal bilayer graphene at zero magnetic field

Emergent phenomena arising from the collective behavior of electrons is generally expected when Coulomb interactions dominate over the kinetic energy, as in delocalized quasiparticles in highly degenerate flat bands. Bernal-stacked bilayer graphene intrinsically supports a pair of flat bands predicted to host a variety of spontaneous broken-symmetry states arising from van Hove singularities and a four-fold spin-valley (isospin) degeneracy. Here, we show that ultra-clean samples of bilayer graphene display a cascade of symmetry-broken states with spontaneous and spin and valley ordering at zero magnetic field. Using capacitive sensing in a dual-gated geometry, we tune the carrier density and electric displacement field independently to explore the phase space of transitions and probe the character of the isospin order. Itinerant ferromagnetic states emerge near the conduction and valence band edges with complete spin and valley polarization and a high degree of displacement field tunability. At larger hole densities, two-fold degenerate quantum oscillations manifest in an additional broken symmetry state that is enhanced by the application of an in-plane magnetic field. Both types of symmetry-broken states display enhanced layer polarization at low temperatures, suggesting a coupling to the layer pseudospin degree of freedom in the electronic wavefunctions. Notably, the zero-field spontaneous symmetry breaking reported here emerges in the absence of a moiré superlattice and is intrinsic to natural graphene bilayers. Thus, we demonstrate that the tunable bands of bilayer graphene represent a related, but distinct approach to produce flat band collective behavior, complementary to engineered moiré structures.

preprint2020arXiv

Superconducting Contact and Quantum Interference Between Two-Dimensional van der Waals and Three-Dimensional Conventional Superconductors

Two-dimensional (2D) transition-metal dichalcogenide superconductors have unique and desirable properties for integration with conventional superconducting circuits. However, fully superconducting contact must be made between the 2D material and three-dimensional (3D) superconductors in order to employ the standard microwave drive and readout of qubits in such circuits. Here, we present a method for creating zero-resistance contacts between 2D NbSe$_2$ and 3D aluminum that behave as Josephson junctions (JJs) with large effective areas compared to 3D-3D JJs. We present a model for the supercurrent flow in a 2D-3D superconducting structure by numerical solution of the Ginzburg-Landau equations and find good agreement with experiment. These results demonstrate a crucial step towards a new generation of hybrid superconducting quantum circuits.

preprint2019arXiv

Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe$_2$

The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.

preprint2015arXiv

Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-band. These observations are compared to ones from similar heterostructures formed with monolayer graphene.