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Randall M. Feenstra

Randall M. Feenstra appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

9 published item(s)

preprint2020arXiv

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe$_2$

The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point(n ~ 1E10 (1/cm^2)), where mobility of 43700 cm^2/Vs is measured over an area of 10 mm^2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Oxygen Vacancies on SrO-terminated SrTiO3(001) Surfaces studied by Scanning Tunneling Spectroscopy

The electronic structure of SrTiO3(001) surfaces was studied using scanning tunneling spectroscopy and density-functional theory. With high dynamic range measurements, an in-gap transition level was observed on SrO-terminated surfaces, at 2.7 eV above the valence band maximum. The density of centers responsible for this level was found to increase with surface segregation of oxygen vacancies and decrease with exposure to molecular oxygen. Based on these finding, the level is attributed to surface O vacancies. A level at a similar energy is predicted theoretically on SrO-terminated surfaces. For TiO2-terminated surfaces, no discrete in-gap state was observed, although one is predicted theoretically. This lack of signal is believed to be due to the nature of defect wavefunction involved, as well as the possible influence of transport limitations in the tunneling spectroscopy measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer $SL-WSe_2$

Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and photonics. Although theoretical calculations to date have shown qualitatively similar features, there exist subtle differences which can lead to important consequences in the device characteristics. For example, most calculations have shown that all single layer (SL) TMDs have direct band gaps, while some have shown that $SL-WSe_2$ have an indirect gap. Moreover, there are large variations in the reported quasiparticle gaps, corresponding to large variations in exciton binding energies. By using a comprehensive form of scanning tunneling spectroscopy, we have revealed detailed quasiparticle electronic structures in TMDs, including the quasi-particle gaps, critical point energy locations and their origins in the Brillouin Zones (BZs). We show that $SL-WSe_2$ actually has an indirect quasi-particle gap with the conduction band minimum located at the Q point (instead of K), albeit the two states are nearly degenerate. Its implications on optical properties are discussed. We have further observed rich quasi-particle electronic structures of TMDs as a function of atomic structures and spin-orbital couplings.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-band. These observations are compared to ones from similar heterostructures formed with monolayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Topographic and electronic structure of cleaved SrTiO3(001) surfaces

The topographic and electronic structure of cleaved SrTiO3(001) surfaces were studied, employing samples that either had or had not been coated with Ti on their outer surfaces prior to fracture. In both cases, SrO- and TiO2-terminated terraces were present on the cleavage surface, enabling in situ studies on either termination. However, the samples coated with Ti prior to fracture were found to yield a rougher morphology on TiO2-terminated terraces as well as a higher density of oxygen vacancies during an annealing (outgassing) step following the coating. The higher density of oxygen vacancies in the bulk of the Ti-coated samples also provides higher conductivity which, in turn, improves a sensitivity of the spectroscopy and reduces the effect of tip-induced band bending. Nonetheless, similar spectral features, unique to each termination, were observed for samples both with and without the Ti coating. Notably, with moderate-temperature annealing following fracture, a strong discrete peak in the conductance spectra, arising from oxygen vacancies, was observed on the SrO-terminated terraces. This peak appears at slightly different voltages for coated and uncoated samples, signifying a possible effect of tip-induced band bending.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene

We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1.56 eV) is observed in monolayer MoSe2 on both CaF2 and epitaxial graphene. The band edge absorption is very sharp, <60 meV over 3 decades. Overcoming the observed small grains by promoting mobility of Mo atoms would make MBE a powerful technique to achieve high quality 2D materials and heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor

In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-to- source bias VDS . Our model shows that the current of the SymFET is very weakly dependent on temperature. The resonant current peak is controlled by chemical doping and applied gate bias. The on/off ratio increases with graphene coherence length and doping. The symmetric resonant peak is a good candidate for high-speed analog applications, and can enable digital logic similar to the BiSFET. Our analytical model also offers the benefit of permitting simple analysis of features such as the full-width-at-half-maximum (FWHM) of the resonant peak and higher order harmonics of the nonlinear current. The SymFET takes advantage of the perfect symmetry of the bandstructure of 2D graphene, a feature that is not present in conventional semiconductors.

0 citations0 reviewsNo code linkedOpen access