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Sergey L. Rumyantsev

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2015arXiv

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from 30000 to 36000 cm2/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to 5 x 10^-9 μm2 Hz^-1, which is a factor of x5 - x10 lower than that in non-encapsulated graphene devices on Si/SiO2. The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO2 gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.

preprint2011arXiv

Observation of the "Memory Steps" in Graphene at Elevated Temperatures

We found that the current-voltage characteristics of the single-layer graphene field-effect transistors exhibit an intriguing feature - an abrupt change of the current near zero gate bias at elevated temperatures T > 500 K. The strength of the effect - referred to as the "memory step" by analogy with the "memory dips" - known phenomenon in electron glasses - depends on the rate of the voltage sweep. The slower the sweep - the more pronounced is the step in the current. Despite differences in examined graphene transistor characteristics, the "memory step" always appears near zero gate bias. The effect is reproducible and preserved after device aging. A similar feature has been previously observed in electronic glasses albeit at cryogenic temperatures and with opposite dependence on the rate of the voltage sweep. The observed "memory step" can be related to the slow relaxation processes in graphene. This new characteristic of electron transport in graphene can be used for applications in high-temperature sensors and switches.

preprint2010arXiv

1/f Noise in Thin Films of Topological Insulator Materials

We report results of investigation of the low-frequency excess noise in device channels made from topological insulators - a new class of materials with a bulk insulating gap and conducting surface states. The thin-film bismuth selenide samples were prepared by the "graphene-like" mechanical exfoliation from bulk crystals. The fabricated four-contact devices had linear current - voltage characteristics in the low-bias regime. The current fluctuations had the noise spectral density proportional to 1/f for the frequency f below 10 kHz. The noise spectral density followed the quadratic dependence on the drain - source current. The obtained data is important for planning transport experiments with topological insulators. We suggest that achieving the pure topological insulator phase with the current conduction through the "protected" surface states can lead to noise reduction via suppression of certain scattering mechanisms.