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Researcher profile

Desalegne Teweldebrhan

Desalegne Teweldebrhan contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2010arXiv

1/f Noise in Thin Films of Topological Insulator Materials

We report results of investigation of the low-frequency excess noise in device channels made from topological insulators - a new class of materials with a bulk insulating gap and conducting surface states. The thin-film bismuth selenide samples were prepared by the "graphene-like" mechanical exfoliation from bulk crystals. The fabricated four-contact devices had linear current - voltage characteristics in the low-bias regime. The current fluctuations had the noise spectral density proportional to 1/f for the frequency f below 10 kHz. The noise spectral density followed the quadratic dependence on the drain - source current. The obtained data is important for planning transport experiments with topological insulators. We suggest that achieving the pure topological insulator phase with the current conduction through the "protected" surface states can lead to noise reduction via suppression of certain scattering mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

From Graphene to Bismuth Telluride: Mechanical Exfoliation of Quasi-2D Crystals for Applications in Thermoelectrics and Topological Insulators

Bismuth telluride (Bi2Te3) and its alloys are the best bulk thermoelectric materials known today. The stacked quasi-two-dimensional (2D) layers of Bi2Te3 were also identified as topological insulators. In this paper we describe a method for graphene-inspired exfoliation of crystalline bismuth telluride films with a thickness of a few atoms. The atomically thin films were suspended across trenches in Si/SiO2 substrates, and subjected to detail characterization. The presence of the van der Waals gaps allowed us to disassemble Bi2Te3 crystal into its quintuple building blocks - five mono-atomic sheets consisting of Te(1)-Bi-Te(2)-Bi-Te(1). By altering the thickness and sequence of atomic planes we were able to create designer non-stoichiometric quasi-2D crystalline films, change their composition and doping, as well as other properties. The exfoliated quintuples and ultra-thin films have low thermal conductivity, high electrical conductivity and enhanced thermoelectric properties. The obtained results pave the way for producing stacks of crystalline bismuth telluride quantum wells with the strong spatial confinement of charge carriers and acoustic phonons for thermoelectric devices. The developed technology for producing free-standing quasi-2D layers of Te(1)-Bi-Te(2)-Bi-Te(1) creates an impetus for investigation of the topological insulators and their possible practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Large-Area High-Throughput Identification and Quality Control of Graphene and Few-Layer Graphene: Prospects of Industry-Scale Applications

Practical applications of graphene require a reliable high-throughput method of graphene identification and quality control, which can be used for large-scale substrates and wafers. We have proposed and experimentally tested a fast and fully automated approach for determining the number of atomic planes in graphene samples. The procedure allows for in situ identification of the borders of the regions with the same number of atomic planes. It is based on an original image processing algorithm, which utilizes micro-Raman calibration, light background subtraction, lighting non-uniformity correction, and the color and grayscale image processing for each pixel. The outcome of the developed procedure is a pseudo-color map, which marks the single-layer and few-layer graphene regions on the substrate of any size that can be captured by an optical microscope. Our approach works for various substrates, and can be applied to the mechanically exfoliated, chemically derived, deposited or epitaxial graphene on an industrial scale.

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preprint2009arXiv

"Graphene-Like" Exfoliation of Atomically-Thin Bismuth Telluride Films

We report on graphene-like exfoliation of the large-area crystalline films and ribbons of bismuth telluride with the thicknesses of a few atoms. It is demonstrated that bismuth telluride, the most important material for thermoelectric industry, can be mechanically separated into its building blocks -[Te-Bi-Te-Bi-Te]- atomic five-folds with the thickness of ~1 nm and even further - to subunits with smaller thicknesses. The atomically-thin crystals can be structured into suspended crystalline ribbons providing quantum confinement in two dimensions. The quasi two-dimensional (2-D) crystals of bismuth telluride revealed high electrical conductivity. The proposed atomic-layer engineering of bismuth telluride opens up a principally new route for drastic enhancement of the thermoelectric figure of merit.

0 citations0 reviewsNo code linkedOpen access